Reference Only

SI9933CDY-T1-E3

MOSFETs -20V Vds 12V Vgs SO-8

Manufacturer:

Mfr Part:
SI9933CDY-T1-E3

TTI Part:
SI9933CDY-T1-E3

EDA / CAD Models

Alternate Part Number

SI9933CDY-T1-GE3

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseSOIC-8
Transistor PolarityP-Channel
Number of Channels2 Channel
Vds - Drain-Source Breakdown Voltage20 V
Id - Continuous Drain Current4 A
Rds On - Drain-Source Resistance58 mOhms
Vgs - Gate-Source Voltage- 12 V, 12 V
Vgs th - Gate-Source Threshold Voltage600 mV
Qg - Gate Charge26 nC
Minimum Operating Temperature- 50 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation3.1 W
Channel ModeEnhancement
TradenameTrenchFET
PackagingReel
ConfigurationDual
Fall Time13 ns
Forward Transconductance - Min11 S
Product TypeMOSFETs
Rise Time50 ns
SeriesSI9
SubcategoryTransistors
Transistor Type2 P-Channel
Typical Turn-Off Delay Time29 ns
Typical Turn-On Delay Time21 ns
Part # AliasesSI9933CDY-E3

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

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Lead Time: 37 Weeks
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0,165 €412,50 €
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