Reference Only
SI9933CDY-T1-GE3
MOSFETs -20V Vds 12V Vgs SO-8
Specifications
| Description | Product Attribute | Similar |
|---|---|---|
| Manufacturer | Vishay | |
| Product Category | MOSFETs | |
| Technology | Si | |
| Mounting Style | SMD/SMT | |
| Package / Case | SOIC-8 | |
| Transistor Polarity | P-Channel | |
| Number of Channels | 2 Channel | |
| Vds - Drain-Source Breakdown Voltage | 20 V | |
| Id - Continuous Drain Current | 4 A | |
| Rds On - Drain-Source Resistance | 58 mOhms | |
| Vgs - Gate-Source Voltage | - 12 V, 12 V | |
| Vgs th - Gate-Source Threshold Voltage | 600 mV | |
| Qg - Gate Charge | 17 nC | |
| Minimum Operating Temperature | - 50 C | |
| Maximum Operating Temperature | + 150 C | |
| Pd - Power Dissipation | 3.1 W | |
| Channel Mode | Enhancement | |
| Tradename | TrenchFET | |
| Packaging | Reel | |
| Configuration | Dual | |
| Fall Time | 13 ns | |
| Forward Transconductance - Min | 11 S | |
| Product Type | MOSFETs | |
| Rise Time | 50 ns | |
| Series | SI9 | |
| Subcategory | Transistors | |
| Transistor Type | 2 P-Channel | |
| Typical Turn-Off Delay Time | 29 ns | |
| Typical Turn-On Delay Time | 21 ns | |
| Part # Aliases | SI9933CDY-GE3 |
Export and Environmental Classification
| Attribute | Description |
|---|---|
| ECCN | EAR99 |
| HTS | 8541290065 |
| TARIC | 8541210000 |
| RoHS Compliant | Yes RoHS Compliant |
| RoHS Exemption Number | N/A |
| Lead(PB) in Terminals | No Lead Free |
| REACH SVHC | No |
| REACH Substance Name | N/A |
Documents
Datasheet
Application Notes
25.000In Stock
5.000 expected 17-Jun-26
Quantity
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Unit Price
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Ext. Price
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Reel
(Minimum: 2.500 / Multiples: 2.500)| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 0,181 € | 452,50 € | |
| 0,178 € | 890,00 € | |
| 0,175 € | 1.312,50 € | |
| 0,172 € | 1.720,00 € | |
| 0,17 € | 2.125,00 € | |
| 0,167 € | 4.175,00 € |
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