Reference Only

SI9933CDY-T1-GE3

MOSFETs -20V Vds 12V Vgs SO-8

Manufacturer:

Mfr Part:
SI9933CDY-T1-GE3

TTI Part:
SI9933CDY-T1-GE3

EDA / CAD Models

Alternate Part Number

SI9933CDY-T1-E3

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseSOIC-8
Transistor PolarityP-Channel
Number of Channels2 Channel
Vds - Drain-Source Breakdown Voltage20 V
Id - Continuous Drain Current4 A
Rds On - Drain-Source Resistance58 mOhms
Vgs - Gate-Source Voltage- 12 V, 12 V
Vgs th - Gate-Source Threshold Voltage600 mV
Qg - Gate Charge17 nC
Minimum Operating Temperature- 50 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation3.1 W
Channel ModeEnhancement
TradenameTrenchFET
PackagingReel
ConfigurationDual
Fall Time13 ns
Forward Transconductance - Min11 S
Product TypeMOSFETs
Rise Time50 ns
SeriesSI9
SubcategoryTransistors
Transistor Type2 P-Channel
Typical Turn-Off Delay Time29 ns
Typical Turn-On Delay Time21 ns
Part # AliasesSI9933CDY-GE3

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541210000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

25.000In Stock

5.000 expected 17-Jun-26
Please adjust quantity to minimum and multiple values.
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Reel

(Minimum: 2.500 / Multiples: 2.500)
Quantity Unit PriceExt. Price
0,181 €452,50 €
0,178 €890,00 €
0,175 €1.312,50 €
0,172 €1.720,00 €
0,17 €2.125,00 €
0,167 €4.175,00 €
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