Part | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
TTI: SI2308BDS-T1-GE3 Mfr: SI2308BDS-T1-GE3 Vishay Semiconductors Availability: 159.000 1.494.000 On Order MOSFET 60V Vds 20V Vgs SOT-23 | 159.000 1.494.000 On Order | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 60 V | 2.3 A | 156 mOhms | - 20 V, + 20 V | 3 V | 2.3 nC | - 55 C | + 150 C | 1.66 W | Enhancement | TrenchFET | Reel | SI2308BDS-T1-BE3 SI2308BDS-GE3 | |||
TTI: SUM110P06-08L-E3 Mfr: SUM110P06-08L-E3 Vishay Semiconductors Availability: 14.400 MOSFET 60V 110A 272W 8.0mohm @ 10V | 14.400 | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 60 V | 110 A | 8 mOhms | - 20 V, + 20 V | 1 V | 160 nC | - 55 C | + 175 C | 272 W | Enhancement | TrenchFET | Reel | ||||
TTI: SI2333DDS-T1-GE3 Mfr: SI2333DDS-T1-GE3 Vishay Semiconductors Availability: 15.000 MOSFET -12V Vds 8V Vgs SOT-23 | 15.000 | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 12 V | 6 A | 23 mOhms | - 8 V, + 8 V | 1 V | 9 nC | - 55 C | + 150 C | 1.7 W | Enhancement | TrenchFET | Reel | SI2333DDS-T1-BE3 | |||
TTI: SI2309CDS-T1-GE3 Mfr: SI2309CDS-T1-GE3 Vishay Semiconductors Availability: 3.000 180.000 On Order MOSFET -60V Vds 20V Vgs SOT-23 | 3.000 180.000 On Order | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 60 V | 1.6 A | 345 mOhms | - 20 V, + 20 V | 3 V | 2.7 nC | - 55 C | + 150 C | 1.7 W | Enhancement | TrenchFET | Reel | SI2309CDS-T1-BE3 SI2309CDS-GE3 | |||
TTI: SI2318CDS-T1-GE3 Mfr: SI2318CDS-T1-GE3 Vishay Semiconductors Availability: 30.000 120.000 On Order MOSFET 40V Vds 20V Vgs SOT-23 | 30.000 120.000 On Order | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 40 V | 5.6 A | 42 mOhms | - 20 V, + 20 V | 2.5 V | 2.9 nC | - 55 C | + 150 C | 2.1 W | Enhancement | TrenchFET | Reel | SI2318CDS-T1-BE3 SI2318CDS-GE3 | |||
TTI: IRFD110PBF Mfr: IRFD110PBF Vishay / Siliconix Availability: 38.000 20.000 Expected 10-Dec-25 MOSFET N-CH SINGLE 100V HEXDIP | 38.000 20.000 Expected 10-Dec-25 | Si | Through Hole | HVMDIP-4 | N-Channel | 1 Channel | 100 V | 1 A | 540 mOhms | - 20 V, + 20 V | 2 V | 8.3 nC | - 55 C | + 175 C | 1.3 W | Enhancement | Tube | |||||
4.500 15.000 On Order | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 18 A | 180 mOhms | - 20 V, + 20 V | 4 V | 7 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRF640PBF-BE3 | |||||
TTI: SI2301CDS-T1-GE3 Mfr: SI2301CDS-T1-GE3 Vishay Semiconductors Availability: 57.000 150.000 On Order MOSFET -20V Vds 8V Vgs SOT-23 | 57.000 150.000 On Order | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 20 V | 3.1 A | 112 mOhms | - 8 V, + 8 V | 1 V | 3.3 nC | - 55 C | + 150 C | 1.6 W | Enhancement | TrenchFET | Reel | SI2301CDS-T1-BE3 SI2301CDS-GE3 | |||
TTI: SUM110P06-07L-E3 Mfr: SUM110P06-07L-E3 Vishay Semiconductors Availability: 29.600 45.600 On Order MOSFET 60V 110A 375W | 29.600 45.600 On Order | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 60 V | 110 A | 6.9 mOhms | - 20 V, + 20 V | 1 V | 230 nC | - 55 C | + 175 C | 375 W | Enhancement | TrenchFET | Reel | SUM110P06-07L | |||
TTI: SUP90P06-09L-E3 Mfr: SUP90P06-09L-E3 Vishay Semiconductors Availability: 5.050 13.500 On Order MOSFET 60V 90A 250W 9.3mohm @ 10V | 5.050 13.500 On Order | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 60 V | 90 A | 7.4 mOhms | - 20 V, + 20 V | 3 V | 240 nC | - 55 C | + 175 C | 250 W | Enhancement | TrenchFET | Tube | ||||
TTI: SI2319CDS-T1-GE3 Mfr: SI2319CDS-T1-GE3 Vishay Semiconductors Availability: 33.000 MOSFET -40V Vds 20V Vgs SOT-23 | 33.000 | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 40 V | 4.4 A | 77 mOhms | - 20 V, + 20 V | 1.2 V | 21 nC | - 55 C | + 150 C | 2.5 W | Enhancement | TrenchFET | Reel | SI2319CDS-T1-BE3 SI2319CDS-GE3 | |||
TTI: SI7489DP-T1-GE3 Mfr: SI7489DP-T1-GE3 Vishay Semiconductors Availability: 3.000 MOSFET -100V Vds 20V Vgs PowerPAK SO-8 | 3.000 | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 100 V | 28 A | 41 mOhms | - 20 V, + 20 V | 1 V | 106 nC | - 55 C | + 150 C | 83 W | Enhancement | TrenchFET | Reel | SI7489DP-GE3 | |||
TTI: SUD50P06-15-GE3 Mfr: SUD50P06-15-GE3 Vishay Semiconductors Availability: 60.000 40.000 Expected 29-Jan-25 MOSFET 60V 50A 113W 15mohm @ 10V | 60.000 40.000 Expected 29-Jan-25 | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 50 A | 15 mOhms | - 20 V, + 20 V | 3 V | 40 nC | - 55 C | + 150 C | 113 W | Enhancement | TrenchFET | Reel | SUD50P06-15-BE3 | |||
TTI: SI1416EDH-T1-GE3 Mfr: SI1416EDH-T1-GE3 Vishay Semiconductors Availability: 57.000 MOSFET 30V Vds 12V Vgs SC70-6 | 57.000 | Si | SMD/SMT | SOT-363-6 | N-Channel | 1 Channel | 30 V | 3.9 A | 58 mOhms | - 12 V, + 12 V | 1.4 V | 12 nC | - 55 C | + 150 C | 1.56 W | Enhancement | TrenchFET | Reel | SI1416EDH-T1-BE3 SI1410EDH-T1-E3-S SI1410EDH-T1-GE3 SI1426DH-T1-E3-S | |||
TTI: SI2304DDS-T1-GE3 Mfr: SI2304DDS-T1-GE3 Vishay Semiconductors Availability: 111.000 102.000 Expected 04-Mar-26 MOSFET 30V Vds 20V Vgs SOT-23 | 111.000 102.000 Expected 04-Mar-26 | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 30 V | 3.6 A | 60 mOhms | - 20 V, + 20 V | 1.2 V | 6.7 nC | - 55 C | + 150 C | 1.7 W | Enhancement | TrenchFET | Reel | SI2304DDS-T1-BE3 SI2304DDS-GE3 | |||
TTI: IRF740STRLPBF Mfr: IRF740STRLPBF Vishay Semiconductors Availability: 5.600 MOSFET N-CH SINGLE 400V TO263 | 5.600 | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 400 V | 10 A | 550 mOhms | - 20 V, + 20 V | 2 V | 63 nC | - 55 C | + 150 C | 125 W | Enhancement | Reel | |||||
TTI: SI9945BDY-T1-GE3 Mfr: SI9945BDY-T1-GE3 Vishay Semiconductors Availability: 37.500 150.000 On Order MOSFET 60V Vds 20V Vgs SO-8 | 37.500 150.000 On Order | Si | SMD/SMT | SOIC-8 | N-Channel | 2 Channel | 60 V | 5.3 A | 58 mOhms | - 20 V, + 20 V | 1 V | 13 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI9945BDY-GE3 | |||
TTI: SI2336DS-T1-GE3 Mfr: SI2336DS-T1-GE3 Vishay Semiconductors Availability: 9.000 90.000 On Order MOSFET 30V Vds 8V Vgs SOT-23 | 9.000 90.000 On Order | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 30 V | 5.2 A | 42 mOhms | - 8 V, + 8 V | 1 V | 10 nC | - 55 C | + 150 C | 1.8 W | Enhancement | TrenchFET | Reel | SI2336DS-T1-BE3 SI2336DS-GE3 | |||
TTI: SI4178DY-T1-GE3 Mfr: SI4178DY-T1-GE3 Vishay Semiconductors Availability: 20.000 MOSFET 30V Vds 25V Vgs SO-8 | 20.000 | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 12 A | 21 mOhms | - 20 V, + 20 V | 1.4 V | 7.5 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | SI4178DY-GE3 | |||
TTI: SI2347DS-T1-GE3 Mfr: SI2347DS-T1-GE3 Vishay Semiconductors Availability: 6.000 87.000 On Order MOSFET -30V Vds 20V Vgs SOT-23 | 6.000 87.000 On Order | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 30 V | 5 A | 33 mOhms | - 20 V, + 20 V | 2.5 V | 6.9 nC | - 55 C | + 150 C | 1.7 W | Enhancement | TrenchFET | Reel | SI2347DS-T1-BE3 | |||
TTI: SI4848DY-T1-GE3 Mfr: SI4848DY-T1-GE3 Vishay Semiconductors Availability: 387.500 MOSFET 150V Vds 20V Vgs SO-8 | 387.500 | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 150 V | 3.7 A | 85 mOhms | - 20 V, + 20 V | 2 V | 21 nC | - 55 C | + 150 C | 3 W | Enhancement | TrenchFET | Reel | SI4848DY-GE3 | |||
5.600 | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 80 V | 110 A | 11.2 mOhms | - 20 V, + 20 V | 1 V | 180 nC | - 55 C | + 175 C | 375 W | Enhancement | TrenchFET | Reel | |||||
TTI: 2N7002K-T1-E3 Mfr: 2N7002K-T1-E3 Vishay / Siliconix Availability: 291.000 MOSFET 60V Vds 20V Vgs SOT-23 | 291.000 | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 60 V | 300 mA | 2 Ohms | - 20 V, + 20 V | 1 V | 600 pC | - 55 C | + 150 C | 350 mW | Enhancement | Reel | 2N7002K-E3 | ||||
TTI: SUD50P04-08-GE3 Mfr: SUD50P04-08-GE3 Vishay Semiconductors Availability: 60.000 72.000 On Order MOSFET 40V 50A P-CH MOSFET | 60.000 72.000 On Order | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 40 V | 50 A | 8.1 mOhms | - 20 V, + 20 V | 2.5 V | 159 nC | - 55 C | + 150 C | 73.5 W | Enhancement | TrenchFET | Reel | SUD50P04-08-BE3 | |||
TTI: SI2323CDS-T1-GE3 Mfr: SI2323CDS-T1-GE3 Vishay Semiconductors Availability: 63.000 MOSFET -20V Vds 8V Vgs SOT-23 | 63.000 | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 20 V | 6 A | 39 mOhms | - 8 V, + 8 V | 1 V | 9 nC | - 55 C | + 150 C | 2.5 W | Enhancement | TrenchFET | Reel | SI2323CDS-T1-BE3 SI2323CDS-GE3 |