IXGH24N120 - IXYS - IGBTs
3 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Package / Case | Mounting Style | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Maximum Gate Emitter Voltage | Continuous Collector Current at 25 C | Pd - Power Dissipation | Minimum Operating Temperature | Maximum Operating Temperature | Series | Qualification | Packaging |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | Si | TO-247AD-3 | Through Hole | Single | 1.2 kV | 4.2 V | - 20 V, 20 V | 48 A | 250 W | - 55 C | + 150 C | IXGH24N120 | Tube | ||||
0In Stock | Si | TO-247AD-3 | - 20 V, 20 V | IXGH24N120 | Tube | ||||||||||||
Mfr: IXGH24N120C3H1 TTI: Not Assigned IXYS Availability: 0In StockIGBTs High Frequency Range 40khz C-IGBT w/Diode | 0In Stock | Si | TO-247AD-3 | - 20 V, 20 V | IXGH24N120 | Tube |