IXGH32N170 - IXYS - IGBTs
2 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Package / Case | Mounting Style | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Maximum Gate Emitter Voltage | Continuous Collector Current at 25 C | Pd - Power Dissipation | Minimum Operating Temperature | Maximum Operating Temperature | Series | Qualification | Packaging |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | Si | TO-247AD-3 | Through Hole | Single | 1.7 kV | 3.3 V | - 20 V, 20 V | 75 A | 350 W | - 55 C | + 150 C | IXGH32N170 | Tube | ||||
0In Stock | Si | TO-247AD-3 | Through Hole | Single | 1.7 kV | 5 V | - 20 V, 20 V | 32 A | 350 W | - 55 C | + 150 C | IXGH32N170 | Tube |