IXXH50N60 - IXYS - IGBTs
4 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Package / Case | Mounting Style | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Maximum Gate Emitter Voltage | Continuous Collector Current at 25 C | Pd - Power Dissipation | Minimum Operating Temperature | Maximum Operating Temperature | Series | Qualification | Packaging |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | Si | TO-247-3 | Through Hole | Single | 600 V | 1.8 V | - 20 V, 20 V | 120 A | 600 W | - 55 C | + 175 C | IXXH50N60 | Tube | ||||
0In Stock | Si | TO-247-3 | Through Hole | Single | 600 V | 1.8 V | - 20 V, 20 V | 120 A | 600 W | - 55 C | + 175 C | IXXH50N60 | Tube | ||||
0In Stock | Si | TO-247AD | Through Hole | Single | 600 V | 2.3 V | - 20 V, 20 V | 100 A | 600 W | - 55 C | + 150 C | IXXH50N60 | Tube | ||||
0In Stock | Si | TO-247AD | Through Hole | 600 V | 2.3 V | - 20 V, 20 V | 100 A | 600 W | - 55 C | + 150 C | IXXH50N60 | Tube |