IXYH100N65 - IXYS - IGBTs
1 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Package / Case | Mounting Style | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Maximum Gate Emitter Voltage | Continuous Collector Current at 25 C | Pd - Power Dissipation | Minimum Operating Temperature | Maximum Operating Temperature | Series | Qualification | Packaging |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | Si | TO-247-3 | Through Hole | Single | 650 V | 2.3 V | - 20 V, 20 V | 200 A | 830 W | - 55 C | + 175 C | IXYH100N65 | Tube |