IXFN360N10 - IXYS - MOSFET Modules
1 ResultsPart | Availability | Purchasing | RoHS/Lead | Manufacturer | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Series | Packaging |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | IXYS | Si | Screw Mount | SOT-227-4 | N-Channel | 1 Channel | 100 V | 360 A | 2.6 mOhms | - 20 V, + 20 V | 2.5 V | - 55 C | + 175 C | 830 W | IXFN360N10 | Tube |