IXYS - MOSFETs
2.316 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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30In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 22 A | 270 mOhms | - 30 V, 30 V | 5.5 V | 55 nC | - 55 C | + 150 C | 350 W | Enhancement | HiPerFET | Tube | ||||
Mfr: IXFH15N100Q3 TTI: IXFH15N100Q3 IXYS Availability: 60In StockMOSFETs Q3Class HiPerFET Pwr MOSFET 1000V/15A | 60In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 15 A | 1.05 Ohms | - 30 V, 30 V | 6.5 V | 64 nC | - 55 C | + 150 C | 690 W | Enhancement | HiPerFET | Tube | |||
300In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 500 V | 10 A | 1 Ohms | - 20 V, 20 V | 2 V | 50 nC | - 55 C | + 150 C | 300 W | Enhancement | PolarP | Tube | ||||
90In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 100 V | 110 A | 15 mOhms | - 20 V, 20 V | 5 V | 110 nC | - 55 C | + 175 C | 480 W | Enhancement | PolarHT | Tube | ||||
250In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1.2 kV | 3 A | 4.5 Ohms | - 20 V, 20 V | 2.5 V | 39 nC | - 55 C | + 150 C | 200 W | Enhancement | HiPerFET | Tube | ||||
Mfr: IXFH110N10P TTI: IXFH110N10P IXYS Availability: 0In Stock30 On Order Expected 03-Mar-27 MOSFETs 110 Amps 100V 0.015 Rds | 0In Stock30 On Order Expected 03-Mar-27 | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 100 V | 110 A | 15 mOhms | - 20 V, 20 V | 5 V | 110 nC | - 55 C | + 175 C | 480 W | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 30 A | 240 mOhms | - 20 V, 20 V | 2.5 V | 335 nC | - 55 C | + 150 C | 540 W | Enhancement | Linear L2 | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 40 A | 170 mOhms | - 20 V, 20 V | 4.5 V | 320 nC | - 55 C | + 150 C | 540 W | Enhancement | Linear L2 | Tube | ||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 100 V | 26 A | 90 mOhms | - 15 V, 15 V | 4.5 V | 52 nC | - 55 C | + 150 C | 150 W | Enhancement | TrenchP | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 150 V | 44 A | 65 mOhms | - 15 V, 15 V | 2 V | 175 nC | - 55 C | + 150 C | 298 W | Enhancement | TrenchP | Reel | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1 kV | 800 mA | 20 Ohms | - 20 V, 20 V | - 55 C | + 150 C | 42 W | Enhancement | Tube | |||||||
0In Stock | Si | SMD/SMT | SOT-223-3 | N-Channel | 1 Channel | 415 V | 5 mA | 14 Ohms | - 20 V, 20 V | 3.6 V | - 40 C | + 85 C | 2.5 W | Depletion | Clare | Reel | |||||
Mfr: IXFK98N50P3 TTI: IXFK98N50P3 IXYS Availability: 0In StockMOSFETs 500V 98A 0.05Ohm PolarP3 Power MOSFET | 0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 500 V | 98 A | 50 mOhms | - 30 V, 30 V | 5 V | 197 nC | - 55 C | + 150 C | 1.3 kW | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 15 A | 480 mOhms | - 20 V, 20 V | 4.5 V | 123 nC | - 55 C | + 150 C | 300 W | Enhancement | Linear L2 | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1.2 kV | 3 A | 4.5 Ohms | - 20 V, 20 V | 2.5 V | 42 nC | - 55 C | + 150 C | 200 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 80 A | 38 mOhms | - 30 V, 30 V | 2.7 V | 137 nC | - 55 C | + 150 C | 890 W | Enhancement | HiPerFET | Tube | ||||
Not Available Online | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 100 V | 180 A | 8 mOhms | - 20 V, 20 V | 2 V | 390 nC | - 55 C | + 150 C | 560 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 4.5 kV | 200 mA | 625 Ohms | - 20 V, 20 V | 4 V | 10.6 nC | - 55 C | + 150 C | 113 W | Enhancement | Tube | |||||
Mfr: IXTP08N100D2 TTI: IXTP08N100D2 IXYS Availability: 0In Stock300 On Order Expected 25-Nov-26 MOSFETs N-CH MOSFETS 1000V 800MA | 0In Stock300 On Order Expected 25-Nov-26 | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1 kV | 800 mA | 21 Ohms | - 20 V, 20 V | 4 V | 14.6 nC | - 55 C | + 150 C | 60 W | Depletion | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 100 V | 320 A | 3.5 mOhms | - 20 V, 20 V | 4 V | 430 nC | - 55 C | + 175 C | 1 kW | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 500 V | 40 A | 170 mOhms | - 20 V, 20 V | 4.5 V | 320 nC | - 55 C | + 150 C | 540 W | Enhancement | Linear L2 | Tube | ||||
0In Stock | Si | SMD/SMT | SOT-89-3 | N-Channel | 1 Channel | 250 V | 360 mA | 4 Ohms | - 15 V, 15 V | - 55 C | + 125 C | 1.1 W | Depletion | Clare | Reel | ||||||
0In Stock | Si | SMD/SMT | SOT-223-3 | N-Channel | 1 Channel | 350 V | 5 mA | 14 Ohms | - 20 V, 20 V | 3.6 V | - 40 C | + 85 C | 2.5 W | Depletion | Clare | Reel | |||||
Mfr: IXFP4N85XM TTI: IXFP4N85XM IXYS Availability: 0In StockMOSFETs 850V/3.5A UlJun XCl HiPerFET Pwr MOSFET | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 850 V | 3.5 A | 2.5 Ohms | - 30 V, 30 V | 3 V | 7 nC | - 55 C | + 150 C | 150 W | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 12 A | 1.3 Ohms | - 30 V, 30 V | 3.5 V | 155 nC | - 55 C | + 150 C | 400 W | Enhancement | Tube |
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