IXYS - MOSFETs
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Part | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 85 V | 24 A | 65 mOhms | - 15 V, 15 V | 4.5 V | 41 nC | - 55 C | + 150 C | 83 W | Enhancement | TrenchP | Tube | ||||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 650 V | 12 A | 145 mOhms | - 30 V, 30 V | 3 V | 36 nC | - 55 C | + 150 C | 390 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 1 kV | 2 A | 7.5 Ohms | - 20 V, 20 V | 2.5 V | 24.3 nC | - 55 C | + 150 C | 86 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 8 A | 450 mOhms | - 30 V, 30 V | 3 V | 11 nC | - 55 C | + 150 C | 150 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 24 A | 145 mOhms | - 30 V, 30 V | 3 V | - 55 C | + 150 C | 390 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 34 A | 96 mOhms | - 30 V, 30 V | 3 V | 54 nC | - 55 C | + 150 C | 540 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 150 V | 102 A | 18 mOhms | - 20 V, 20 V | 5 V | 87 nC | - 55 C | + 175 C | 455 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1.2 kV | 2.4 A | 7.5 Ohms | - 20 V, 20 V | 2.5 V | 37 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 250 V | 82 A | 35 mOhms | - 20 V, 20 V | 5 V | 142 nC | - 55 C | + 150 C | 500 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 30 A | 240 mOhms | - 30 V, 30 V | 5 V | 82 nC | - 55 C | + 150 C | 540 W | Enhancement | PolarHV | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | P-Channel | 1 Channel | 200 V | 24 A | 150 mOhms | - 20 V, 20 V | 5 V | 150 nC | - 55 C | + 150 C | 300 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 32 A | 150 mOhms | - 30 V, 30 V | 3 V | 150 nC | - 55 C | + 150 C | 300 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 150 V | 150 A | 13 mOhms | - 20 V, 20 V | 5 V | 190 nC | - 55 C | + 175 C | 714 W | Enhancement | PolarHT | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1 kV | 700 mA | 15 Ohms | - 30 V, 30 V | 4.5 V | 7.8 nC | - 55 C | + 150 C | 25 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 40 V | 220 A | 3.5 mOhms | - 20 V, 20 V | 2 V | 112 nC | - 55 C | + 175 C | 360 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 65 V | 28 A | 45 mOhms | - 15 V, 15 V | 2.5 V | 46 nC | - 55 C | + 150 C | 83 W | Enhancement | Tube | |||||
Mfr: IXTH75N10L2 TTI: IXTH75N10L2 IXYS Availability: 0In StockMOSFETs LinearL2 Powr MOSFET w/extended FBSOA | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 100 V | 75 A | 21 mOhms | - 20 V, 20 V | 2.5 V | 215 nC | - 55 C | + 150 C | 400 W | Enhancement | Tube | ||||
0In Stock | Si | SMD/SMT | TO-263AA-3 | N-Channel | 1 Channel | 1 kV | 6 A | 2.2 Ohms | - 20 V, 20 V | 2.5 V | 95 nC | - 55 C | + 150 C | 300 W | Depletion | Tube | |||||
Mfr: IXFH80N65X2 TTI: IXFH80N65X2 IXYS Availability: 0In StockMOSFETs MOSFET 650V/80A Ultra Junction X2 | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 80 A | 40 mOhms | - 30 V, 30 V | 2.7 V | 143 nC | - 55 C | + 150 C | 890 W | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1 kV | 2 A | 7.5 Ohms | - 20 V, 20 V | 2.5 V | 24.3 nC | - 55 C | + 150 C | 86 W | Enhancement | Tube | |||||
Mfr: IXFH42N60P3 TTI: IXFH42N60P3 IXYS Availability: 0In StockMOSFETs 600V 42A 0.185Ohm PolarP3 Power MOSFET | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 42 A | 185 mOhms | - 30 V, 30 V | 5 V | 78 nC | - 55 C | + 150 C | 830 W | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 3 kV | 1 A | 50 Ohms | - 20 V, 20 V | 2 V | 30.6 nC | - 55 C | + 150 C | 195 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 200 V | 50 A | 60 mOhms | - 20 V, 20 V | 5 V | 70 nC | - 55 C | + 175 C | 360 W | Enhancement | PolarHT | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 250 V | 50 A | 60 mOhms | - 30 V, 30 V | 3 V | 78 nC | - 55 C | + 150 C | 400 W | Enhancement | HiPerFET | Tube | ||||
Mfr: IXFX98N50P3 TTI: IXFX98N50P3 IXYS Availability: 0In StockMOSFETs 500V 98A 0.05Ohm PolarP3 Power MOSFET | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 98 A | 50 mOhms | - 30 V, 30 V | 5 V | 197 nC | - 55 C | + 150 C | 1.3 kW | Enhancement | HiPerFET | Tube |
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