IXYS - MOSFETs
2.316 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 500 V | 22 A | 270 mOhms | - 30 V, 30 V | 3 V | 50 nC | - 55 C | + 150 C | 350 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 180 A | 6.4 mOhms | - 20 V, 20 V | 2.5 V | 151 nC | - 55 C | + 175 C | 480 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 100 V | 140 A | 11 mOhms | - 20 V, 20 V | 5 V | 155 nC | - 55 C | + 175 C | 600 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 4.5 kV | 200 mA | 625 Ohms | - 20 V, 20 V | 4 V | 10.6 nC | - 55 C | + 150 C | 113 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | SMPD-24 | N-Channel | 1 Channel | 300 V | 102 A | 20 mOhms | - 20 V, 20 V | 3 V | 376 nC | - 55 C | + 150 C | 570 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 48 A | 50 mOhms | - 30 V, 30 V | 2.5 V | 60 nC | - 55 C | + 175 C | 250 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 250 V | 120 A | 24 mOhms | - 20 V, 20 V | 5 V | 185 nC | - 55 C | + 175 C | 700 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | PLUS-264-3 | N-Channel | 1 Channel | 1 kV | 44 A | 220 mOhms | - 30 V, 30 V | 6.5 V | 305 nC | - 55 C | + 150 C | 1.25 kW | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 100 V | 60 A | 18 mOhms | - 20 V, 20 V | 2.5 V | 49 nC | - 55 C | + 175 C | 176 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 12 A | 500 mOhms | - 30 V, 30 V | 5.5 V | 29 nC | - 55 C | + 150 C | 200 W | Enhancement | Polar | Tube | ||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 1.7 kV | 2 A | 6.5 Ohms | - 20 V, 20 V | 4.5 V | 110 nC | - 55 C | + 150 C | 568 W | Depletion | Tube | |||||
Mfr: IXFT320N10T2 TTI: IXFT320N10T2 IXYS Availability: 0In StockMOSFETs Trench T2 HiperFET Power MOSFET | 0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 100 V | 320 A | 3.5 mOhms | - 20 V, 20 V | 4 V | 430 nC | - 55 C | + 175 C | 1 kW | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.7 kV | 2 A | 6.5 Ohms | - 20 V, 20 V | 4.5 V | 110 nC | - 55 C | + 150 C | 568 W | Enhancement | Tube | |||||
Mfr: IXFH50N50P3 TTI: IXFH50N50P3 IXYS Availability: Not Available OnlineMOSFETs N-Channel: Power MOSFET w/Fast Diode | Not Available Online | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 50 A | 120 mOhms | - 30 V, 30 V | 5 V | 85 nC | - 55 C | + 150 C | 960 W | Enhancement | Polar3, HiperFET | Tube | |||
Mfr: IXFA22N65X2 TTI: IXFA22N65X2 IXYS Availability: 0In StockMOSFETs MOSFET 650V/22A Ultra Junction X2 | 0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 650 V | 22 A | 160 mOhms | - 30 V, 30 V | 2.7 V | 38 nC | - 55 C | + 150 C | 360 W | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 36 A | 105 mOhms | - 30 V, 30 V | 3 V | 200 nC | - 55 C | + 150 C | 360 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 22 A | 350 mOhms | - 30 V, 30 V | 5.5 V | 58 nC | - 55 C | + 150 C | 400 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 100 V | 170 A | 9 mOhms | - 20 V, 20 V | 5 V | 198 nC | - 55 C | + 175 C | 714 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 300 V | 102 A | 33 mOhms | - 20 V, 20 V | 5 V | 224 nC | - 55 C | + 150 C | 700 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 100 V | 75 A | 25 mOhms | - 20 V, 20 V | 3 V | 74 nC | - 55 C | + 175 C | 360 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 200 V | 120 A | 22 mOhms | - 20 V, 20 V | 5 V | 152 nC | - 55 C | + 175 C | 714 W | Enhancement | PolarHT | Tube | ||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 250 V | 120 A | 24 mOhms | - 20 V, 20 V | 5 V | 185 nC | - 55 C | + 175 C | 700 W | Enhancement | PolarHT | Tube | ||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 300 V | 52 A | 66 mOhms | - 20 V, 20 V | 2.5 V | 110 nC | - 55 C | + 150 C | 400 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 300 V | 69 A | 49 mOhms | - 20 V, 20 V | 5 V | 156 nC | - 55 C | + 150 C | 500 W | Enhancement | PolarHT | Tube | ||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 300 V | 88 A | 40 mOhms | - 20 V, 20 V | 5 V | 180 nC | - 55 C | + 150 C | 600 W | Enhancement | Tube |
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