IXYS - MOSFETs
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Part | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Mfr: IXFK64N50Q3 TTI: IXFK64N50Q3 IXYS Availability: 0In StockMOSFETs Q3Class HiPerFET Pwr MOSFET 500V/64A | 0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 500 V | 64 A | 85 mOhms | - 30 V, 30 V | 3.5 V | 145 nC | - 55 C | + 150 C | 1 kW | Enhancement | HiPerFET | Tube | |||
Mfr: IXTT110N10L2 TTI: IXTT110N10L2 IXYS Availability: 0In StockMOSFETs Linear Extended FBSOA Power MOSFET | 0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 100 V | 110 A | 18 mOhms | - 20 V, 20 V | 2.5 V | 260 nC | - 55 C | + 150 C | 600 W | Enhancement | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | P-Channel | 1 Channel | 200 V | 68 A | 55 mOhms | - 15 V, 15 V | 4 V | 380 nC | - 55 C | + 150 C | 568 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 200 V | 32 A | 130 mOhms | - 15 V, 15 V | 4 V | 180 nC | - 55 C | + 150 C | 300 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 150 V | 10 A | 350 mOhms | - 15 V, 15 V | 4.5 V | 36 nC | - 55 C | + 150 C | 83 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | PLUS-264-3 | N-Channel | 1 Channel | 1 kV | 44 A | 220 mOhms | - 30 V, 30 V | 6.5 V | 305 nC | - 55 C | + 150 C | 1.25 kW | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 48 A | 50 mOhms | - 30 V, 30 V | 2.5 V | 60 nC | - 55 C | + 175 C | 250 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 12 A | 500 mOhms | - 30 V, 30 V | 5.5 V | 29 nC | - 55 C | + 150 C | 200 W | Enhancement | Polar | Tube | ||||
0In Stock | Si | SMD/SMT | SMPD-24 | N-Channel | 1 Channel | 300 V | 102 A | 20 mOhms | - 20 V, 20 V | 3 V | 376 nC | - 55 C | + 150 C | 570 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 250 V | 120 A | 24 mOhms | - 20 V, 20 V | 5 V | 185 nC | - 55 C | + 175 C | 700 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | SMD-24 | N-Channel | 6 Channel | 150 V | 50 A | 24 mOhms | - 20 V, 20 V | 2.5 V | 97 nC | - 55 C | + 175 C | Enhancement | ISOPLUS-DIL | Tube | |||||
Mfr: IXFP6N120P TTI: IXFP6N120P IXYS Availability: 0In StockMOSFETs POLAR HIPERFET WITH REDUCED RDS 1200V 6A | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1.2 kV | 6 A | 2.75 Ohms | - 30 V, 30 V | 5 V | 92 nC | - 55 C | + 150 C | 250 W | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 500 V | 30 A | 215 mOhms | - 20 V, 20 V | 2.5 V | 240 nC | - 55 C | + 150 C | 400 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 200 V | 220 A | 6.2 mOhms | - 20 V, 20 V | 2.5 V | 204 nC | - 55 C | + 150 C | 890 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 94 A | 10.6 mOhms | - 20 V, 20 V | 4.5 V | 77 nC | - 55 C | + 175 C | 360 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 250 V | 80 A | 13 mOhms | - 20 V, 20 V | 2.5 V | 83 nC | - 55 C | + 150 C | 390 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 100 V | 18 A | 120 mOhms | - 15 V, 15 V | 4.5 V | 39 nC | - 55 C | + 150 C | 83 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 600 V | 14 A | 450 mOhms | - 30 V, 30 V | 5.5 V | 36 nC | - 55 C | + 150 C | 300 W | Enhancement | PolarHV | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1.2 kV | 6 A | 2.75 Ohms | - 30 V, 30 V | 5 V | 92 nC | - 55 C | + 150 C | 250 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 200 V | 60 A | 45 mOhms | - 20 V, 20 V | 4.5 V | 255 nC | - 55 C | + 150 C | 540 W | Enhancement | Linear L2 | Tube | ||||
Mfr: IXFK120N30P3 TTI: IXFK120N30P3 IXYS Availability: 0In StockMOSFETs N-Channel: Power MOSFET w/Fast Diode | 0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 300 V | 120 A | 27 mOhms | - 20 V, 20 V | 3 V | 150 nC | - 55 C | + 150 C | 1.13 mW | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 200 V | 32 A | 130 mOhms | - 15 V, 15 V | 4 V | 185 nC | - 55 C | + 150 C | 300 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 300 V | 38 A | 50 mOhms | - 20 V, 20 V | 2.5 V | 35 nC | - 55 C | + 150 C | 34 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 100 V | 140 A | 11 mOhms | - 20 V, 20 V | 5 V | 155 nC | - 55 C | + 175 C | 600 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 500 V | 22 A | 270 mOhms | - 30 V, 30 V | 3 V | 50 nC | - 55 C | + 150 C | 350 W | Enhancement | Tube |
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