IXYS - MOSFETs
2.316 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 1.2 kV | 16 A | 950 mOhms | - 30 V, 30 V | 6.5 V | 120 nC | - 55 C | + 150 C | 660 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 250 V | 82 A | 35 mOhms | - 20 V, 20 V | 5 V | 142 nC | - 55 C | + 150 C | 500 W | Enhancement | PolarHT | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1 kV | 800 mA | 20 Ohms | - 20 V, 20 V | 4 V | 11.3 nC | - 55 C | + 150 C | 42 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 1 kV | 1 A | 15 Ohms | - 20 V, 20 V | - 55 C | + 150 C | 50 W | Enhancement | Tube | |||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1 kV | 4 A | 3.3 Ohms | - 20 V, 20 V | 6 V | 26 nC | - 55 C | + 150 C | 150 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 50 V | 32 A | 39 mOhms | - 15 V, 15 V | 4.5 V | 46 nC | - 55 C | + 150 C | 83 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 500 V | 40 A | 170 mOhms | - 20 V, 20 V | 4.5 V | 320 nC | - 55 C | + 150 C | 540 W | Enhancement | Linear L2 | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | P-Channel | 1 Channel | 100 V | 108 A | 13 mOhms | - 20 V, 20 V | 4 V | 240 nC | - 55 C | + 150 C | 312 W | Enhancement | PolarP | Tube | ||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | P-Channel | 1 Channel | 100 V | 90 A | 25 mOhms | - 20 V, 20 V | 4 V | 120 nC | - 55 C | + 150 C | 462 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 60 A | 100 mOhms | - 30 V, 30 V | 2.5 V | 610 nC | - 55 C | + 150 C | 960 W | Enhancement | Linear L2 | Tube | ||||
Mfr: IXFX120N30P3 TTI: IXFX120N30P3 IXYS Availability: 0In StockMOSFETs N-Channel: Power MOSFET w/Fast Diode | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 300 V | 120 A | 27 mOhms | - 20 V, 20 V | 3 V | 150 nC | - 55 C | + 150 C | 1.13 kW | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 26 A | 240 mOhms | - 30 V, 30 V | 3 V | 42 nC | - 55 C | + 150 C | 500 W | Enhancement | HiPerFET | Tube | ||||
Mfr: IXFK150N30P3 TTI: IXFK150N30P3 IXYS Availability: 0In StockMOSFETs N-Channel: Power MOSFET w/Fast Diode | 0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 300 V | 150 A | 19 mOhms | - 20 V, 20 V | 3 V | 197 nC | - 55 C | + 150 C | 1.3 kW | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-247-PLUS-3 | P-Channel | 1 Channel | 200 V | 120 A | 30 mOhms | - 15 V, 15 V | 4.5 V | 740 nC | - 55 C | + 150 C | 1.04 kW | Enhancement | TrenchP | Tube | ||||
Mfr: IXFK24N100Q3 TTI: IXFK24N100Q3 IXYS Availability: 0In StockMOSFETs Q3Class HiPerFET Pwr MOSFET 1000V/24A | 0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 1 kV | 24 A | 440 mOhms | - 30 V, 30 V | 3.5 V | 140 nC | - 55 C | + 150 C | 1 kW | Enhancement | HiPerFET | Tube | |||
Mfr: IXFA230N075T2-7 TTI: IXFA230N075T2-7 IXYS Availability: 0In StockMOSFETs TrenchT2 HiperFETs Power MOSFET | 0In Stock | Si | SMD/SMT | TO-263AA-3 | N-Channel | 1 Channel | 75 V | 230 A | 4.2 mOhms | - 20 V, 20 V | 2 V | 178 nC | - 55 C | + 175 C | 480 W | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 150 V | 15 A | 240 mOhms | Tube | |||||||||||||
Mfr: IXFH46N65X2 TTI: IXFH46N65X2 IXYS Availability: 0In StockMOSFETs MOSFET 650V/46A Ultra Junction X2 | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 46 A | 76 mOhms | - 30 V, 30 V | 2.7 V | 75 nC | - 55 C | + 150 C | 660 W | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1.2 kV | 3 A | 4.5 Ohms | - 20 V, 20 V | 2.5 V | 42 nC | - 55 C | + 150 C | 200 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1.5 kV | 4 A | 6 Ohms | - 30 V, 30 V | 2.5 V | 375 nC | - 55 C | + 150 C | 280 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 4.5 kV | 1 A | 80 Ohms | - 20 V, 20 V | 3.5 V | 46 nC | - 55 C | + 150 C | 520 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.5 kV | 2 A | 15 Ohms | - 30 V, 30 V | 6 V | 72 nC | - 55 C | + 150 C | 290 W | Enhancement | Linear | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 75 V | 80 A | 24 mOhms | - 20 V, 20 V | 2.5 V | 103 nC | - 55 C | + 150 C | 357 W | Enhancement | Linear L2 | Tube | ||||
0In Stock | Si | SMD/SMT | SOT-223-3 | N-Channel | 1 Channel | 400 V | 300 mA | 9 Ohms | - 15 V, 15 V | 3.1 V | - 40 C | + 110 C | 2.5 W | Depletion | Reel | ||||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 300 V | 94 A | 36 mOhms | HiPerFET | Tube |
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