IXYS - MOSFETs
2.343 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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Mfr: IXFP110N15T2 TTI: IXFP110N15T2 IXYS Availability: 0In StockMOSFETs Trench T2 HiperFET Power MOSFET | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 150 V | 110 A | 11 mOhms | - 20 V, 20 V | 4.5 V | 150 nC | - 55 C | + 175 C | 480 W | Enhancement | HiPerFET | Tube | |||
Mfr: IXFB132N50P3 TTI: IXFB132N50P3 IXYS Availability: 0In StockMOSFETs 500V 132A 0.039Ohm PolarP3 Power MOSFET | 0In Stock | Si | Through Hole | PLUS-264-3 | N-Channel | 1 Channel | 500 V | 132 A | 39 mOhms | - 30 V, 30 V | 5 V | 250 nC | - 55 C | + 150 C | 1.89 kW | Enhancement | HiPerFET | Tube | |||
Mfr: IXFX420N10T TTI: IXFX420N10T IXYS Availability: 0In StockMOSFETs TRENCH HIPERFET PWR MOSFET 100V 420A | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 100 V | 420 A | 2.6 mOhms | - 20 V, 20 V | 5 V | 670 nC | - 55 C | + 175 C | 1.67 kW | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.5 kV | 4 A | 6 Ohms | - 30 V, 30 V | 2.5 V | 44.5 nC | - 55 C | + 150 C | 280 W | Enhancement | Tube | |||||
Mfr: IXFK300N20X3 TTI: IXFK300N20X3 IXYS Availability: 0In StockMOSFETs N-Ch 200V Enh FET 200Vdgr 300A 4mOhm | 0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 200 V | 300 A | 4 mOhms | - 20 V, 20 V | 2.5 V | 375 nC | - 55 C | + 150 C | 1.25 kW | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1 kV | 6 A | 2.2 Ohms | - 20 V, 20 V | 2.5 V | 95 nC | - 55 C | + 150 C | 300 W | Depletion | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 72 A | 20 mOhms | - 20 V, 20 V | 2.5 V | 55 nC | - 55 C | + 150 C | 320 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 250 V | 76 A | 39 mOhms | - 30 V, 30 V | 3 V | 92 nC | - 55 C | + 150 C | 460 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | HiPerFET | Tube | ||||||||||||||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 250 V | 120 A | 24 mOhms | - 20 V, 20 V | 5 V | 185 nC | - 55 C | + 175 C | 700 W | Enhancement | PolarHT | Tube | ||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 300 V | 88 A | 40 mOhms | - 20 V, 20 V | 5 V | 180 nC | - 55 C | + 150 C | 600 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 650 V | 22 A | 160 mOhms | - 30 V, 30 V | 2.7 V | 38 nC | - 55 C | + 150 C | 360 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 200 V | 120 A | 22 mOhms | - 20 V, 20 V | 5 V | 152 nC | - 55 C | + 175 C | 714 W | Enhancement | PolarHT | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1 kV | 750 mA | 17 Ohms | - 30 V, 30 V | 4.5 V | 7.8 nC | - 55 C | + 150 C | 40 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 1 kV | 800 mA | 20 Ohms | - 20 V, 20 V | 2 V | 11.3 nC | - 55 C | + 150 C | 42 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 150 V | 15 A | 240 mOhms | Tube | |||||||||||||
Mfr: IXFH50N50P3 TTI: IXFH50N50P3 IXYS Availability: Not Available OnlineMOSFETs N-Channel: Power MOSFET w/Fast Diode | Not Available Online | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 50 A | 120 mOhms | - 30 V, 30 V | 5 V | 85 nC | - 55 C | + 150 C | 960 W | Enhancement | Polar3, HiperFET | Tube | |||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.7 kV | 2 A | 6.5 Ohms | - 20 V, 20 V | 4.5 V | 110 nC | - 55 C | + 150 C | 568 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 50 V | 48 A | 30 mOhms | - 15 V, 15 V | 4.5 V | 53 nC | - 55 C | + 150 C | 150 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 100 V | 230 A | 4.7 mOhms | HiPerFET | Tube | ||||||||||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 500 V | 1.6 A | 2.3 Ohms | Tube | ||||||||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 200 V | 130 A | 16 mOhms | - 30 V, 30 V | 5 V | 150 nC | - 55 C | + 175 C | 830 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 200 V | 110 A | 24 mOhms | - 20 V, 20 V | 4.5 V | 500 nC | - 55 C | + 150 C | 960 W | Enhancement | Linear L2 | Tube | ||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 500 V | 800 mA | 4.6 Ohms | - 20 V, 20 V | 4.5 V | 12.7 nC | - 55 C | + 150 C | 60 W | Depletion | Tube | |||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 300 V | 52 A | 66 mOhms | - 20 V, 20 V | 2.5 V | 110 nC | - 55 C | + 150 C | 400 W | Enhancement | Tube |
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