IXYS - MOSFETs
2.315 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | Si | Through Hole | TO-264-3 | P-Channel | 1 Channel | 100 V | 170 A | 14 mOhms | - 20 V, 20 V | 2 V | 240 nC | - 55 C | + 150 C | 890 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 300 V | 26 A | 66 mOhms | - 20 V, 20 V | 2.5 V | 22 nC | - 55 C | + 150 C | 170 W | Enhancement | HiPerFET | Tube | ||||
Mfr: IXFT70N20Q3 TTI: IXFT70N20Q3 IXYS Availability: 0In StockMOSFETs Q3Class HiPerFET Pwr MOSFET 200V/70A | 0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 200 V | 70 A | 40 mOhms | - 30 V, 30 V | 3.5 V | 67 nC | - 55 C | + 150 C | 690 W | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1 kV | 800 mA | 20 Ohms | - 20 V, 20 V | - 55 C | + 150 C | 42 W | Enhancement | Tube | |||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 40 A | 170 mOhms | - 20 V, 20 V | 4.5 V | 320 nC | - 55 C | + 150 C | 540 W | Enhancement | Linear L2 | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 30 A | 240 mOhms | - 20 V, 20 V | 2.5 V | 335 nC | - 55 C | + 150 C | 540 W | Enhancement | Linear L2 | Tube | ||||
Mfr: IXTA44P15T-TRL TTI: IXTA44P15T-TRL IXYS Availability: 0In Stock800 On Order Expected 10-Feb-27 MOSFETs P-CH SINGLE -150V TO263D2 | 0In Stock800 On Order Expected 10-Feb-27 | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 150 V | 44 A | 65 mOhms | - 15 V, 15 V | 2 V | 175 nC | - 55 C | + 150 C | 298 W | Enhancement | TrenchP | Reel | |||
Mfr: IXTY26P10T TTI: IXTY26P10T IXYS Availability: 0In Stock4.200 On Order Expected MOSFETs TrenchP Power MOSFET | 0In Stock4.200 On Order Expected | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 100 V | 26 A | 90 mOhms | - 15 V, 15 V | 4.5 V | 52 nC | - 55 C | + 150 C | 150 W | Enhancement | TrenchP | Tube | |||
0In Stock | Si | Reel | |||||||||||||||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 80 A | 38 mOhms | - 30 V, 30 V | 2.7 V | 137 nC | - 55 C | + 150 C | 890 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 500 V | 40 A | 170 mOhms | - 20 V, 20 V | 4.5 V | 320 nC | - 55 C | + 150 C | 540 W | Enhancement | Linear L2 | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 100 V | 320 A | 3.5 mOhms | - 20 V, 20 V | 4 V | 430 nC | - 55 C | + 175 C | 1 kW | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1 kV | 800 mA | 21 Ohms | - 20 V, 20 V | 4 V | 14.6 nC | - 55 C | + 150 C | 60 W | Depletion | Tube | |||||
Not Available Online | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 100 V | 180 A | 8 mOhms | - 20 V, 20 V | 2 V | 390 nC | - 55 C | + 150 C | 560 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1.2 kV | 3 A | 4.5 Ohms | - 20 V, 20 V | 2.5 V | 42 nC | - 55 C | + 150 C | 200 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 15 A | 480 mOhms | - 20 V, 20 V | 4.5 V | 123 nC | - 55 C | + 150 C | 300 W | Enhancement | Linear L2 | Tube | ||||
0In Stock | Si | SMD/SMT | SOT-223-3 | N-Channel | 1 Channel | 415 V | 5 mA | 14 Ohms | - 20 V, 20 V | 3.6 V | - 40 C | + 85 C | 2.5 W | Depletion | Clare | Reel | |||||
Mfr: IXFK98N50P3 TTI: IXFK98N50P3 IXYS Availability: 0In StockMOSFETs 500V 98A 0.05Ohm PolarP3 Power MOSFET | 0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 500 V | 98 A | 50 mOhms | - 30 V, 30 V | 5 V | 197 nC | - 55 C | + 150 C | 1.3 kW | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 4.5 kV | 200 mA | 625 Ohms | - 20 V, 20 V | 4 V | 10.6 nC | - 55 C | + 150 C | 113 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 100 V | 180 A | 6.4 mOhms | - 55 C | + 175 C | 480 W | Enhancement | HiPerFET | Tube | |||||||
0In Stock | Si | SMD/SMT | SOT-223-3 | N-Channel | 1 Channel | 250 V | 400 mA | 2.5 Ohms | - 15 V, 15 V | 3.1 V | - 55 C | + 110 C | 1.8 W | Depletion | Reel | ||||||
0In Stock | Si | Through Hole | TO-247-3 | P-Channel | 1 Channel | 100 V | 50 A | 55 mOhms | - 20 V, 20 V | 5 V | 140 nC | - 55 C | + 150 C | 300 W | Enhancement | Tube | |||||
Mfr: CPC3982TTR TTI: CPC3982TTR IXYS Availability: 0In StockMOSFETs N-Ch Depletion Mode Vertical DMOS FET | 0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 800 V | 20 mA | 380 Ohms | - 15 V, 15 V | 3.1 V | - 55 C | + 110 C | 400 mW | Depletion | Reel | |||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 200 V | 96 A | 24 mOhms | - 20 V, 20 V | 5 V | 145 nC | - 55 C | + 175 C | 600 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | 150 V | 56 A | 36 mOhms | HiPerFET | Tube |
