IXYS - MOSFETs
2.316 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 850 V | 8 A | 850 mOhms | - 30 V, 30 V | 3 V | 17 nC | - 55 C | + 150 C | 200 W | Enhancement | HiPerFET | Tube | ||||
Mfr: IXFK360N15T2 TTI: IXFK360N15T2 IXYS Availability: 0In StockMOSFETs GigaMOS Trench T2 HiperFET PWR MOSFET | 0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 150 V | 360 A | 4 mOhms | - 20 V, 20 V | 2.5 V | 715 nC | - 55 C | + 175 C | 1.67 mW | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 300 V | 26 A | 66 mOhms | - 20 V, 20 V | 2.5 V | 22 nC | - 55 C | + 150 C | 170 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 300 V | 56 A | 27 mOhms | - 20 V, 20 V | 2.5 V | 56 nC | - 55 C | + 150 C | 36 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 200 V | 60 A | 40 mOhms | - 20 V, 20 V | 3 V | 73 nC | - 55 C | + 175 C | 500 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 2 kV | 3 A | 8 Ohms | - 20 V, 20 V | 3 V | 70 nC | - 55 C | + 150 C | 520 W | Enhancement | Polar3 | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 200 V | 140 A | 9.6 mOhms | - 20 V, 20 V | 2.5 V | 127 nC | - 55 C | + 150 C | 480 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 40 V | 100 A | 7 mOhms | - 20 V, 20 V | 2 V | 25.5 nC | - 55 C | + 175 C | 150 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-264-3 | P-Channel | 1 Channel | 200 V | 90 A | 44 mOhms | - 20 V, 20 V | 4.5 V | 205 nC | - 55 C | + 150 C | 890 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 250 V | 30 A | 140 mOhms | - 20 V, 20 V | 2.5 V | 130 nC | - 55 C | + 150 C | 355 W | Enhancement | Linear L2 | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 20 A | 185 mOhms | - 30 V, 30 V | 2.5 V | 27 nC | - 55 C | + 150 C | 290 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | TO-252-3 | N-Channel | 1 Channel | 55 V | 90 A | 8.4 mOhms | - 20 V, 20 V | 2 V | 42 nC | - 55 C | + 175 C | 150 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 1.6 A | 2.3 Ohms | - 20 V, 20 V | 4.5 V | 23.7 nC | - 55 C | + 150 C | 100 W | Depletion | Tube | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1 kV | 4 A | 3.3 Ohms | - 20 V, 20 V | 6 V | 26 nC | - 55 C | + 150 C | 150 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 300 V | 69 A | 49 mOhms | - 20 V, 20 V | 5 V | 156 nC | - 55 C | + 150 C | 500 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 64 A | 96 mOhms | - 30 V, 30 V | 5 V | 200 nC | - 55 C | + 150 C | 1.04 mW | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 300 V | 88 A | 40 mOhms | - 20 V, 20 V | 2.5 V | 180 nC | - 55 C | + 150 C | 600 W | Enhancement | Tube | |||||
Mfr: IXFQ94N30P3 TTI: IXFQ94N30P3 IXYS Availability: 0In StockMOSFETs N-Channel: Power MOSFET w/Fast Diode | 0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 300 V | 94 A | 36 mOhms | - 20 V, 20 V | 3 V | 102 nC | - 55 C | + 150 C | 1.04 mW | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.5 kV | 12 A | 2 Ohms | - 30 V, 30 V | 4.5 V | 106 nC | - 55 C | + 150 C | 890 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 1 kV | 1.4 A | 11 Ohms | - 20 V, 20 V | 2.5 V | 17.8 nC | - 55 C | + 150 C | 63 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 800 V | 10 A | 1.1 Ohms | - 30 V, 30 V | 5.5 V | 40 nC | - 55 C | + 150 C | 300 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 36 A | 190 mOhms | - 30 V, 30 V | 3 V | 102 nC | - 55 C | + 150 C | 650 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 200 V | 120 A | 22 mOhms | - 20 V, 20 V | 5 V | 152 nC | - 55 C | + 175 C | 714 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 200 V | 140 A | 18 mOhms | - 20 V, 20 V | 2.5 V | 240 nC | - 55 C | + 175 C | 830 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 300 V | 52 A | 73 mOhms | - 20 V, 20 V | 5 V | 110 nC | - 55 C | + 150 C | 400 W | Enhancement | HiPerFET | Tube |
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