IXYS - MOSFETs
2.316 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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0In Stock | Si | Through Hole | ISOPLUS-i4-PAK-3 | N-Channel | 1 Channel | 4.5 kV | 1.4 A | 40 Ohms | - 20 V, 20 V | 4 V | 88 nC | - 55 C | + 150 C | 190 W | Enhancement | Tube | |||||
Mfr: IXTA8N70X2 TTI: IXTA8N70X2 IXYS Availability: 0In StockMOSFETs 700V/8A Ultra Junct X2-Class MOSFET | 0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 700 V | 8 A | 500 mOhms | - 30 V, 30 V | 3 V | 12 nC | - 55 C | + 150 C | 150 W | Enhancement | HiPerFET | Tube | |||
Mfr: IXTY8N70X2 TTI: IXTY8N70X2 IXYS Availability: 0In StockMOSFETs 700V/8A Ultra Junct X2-Class MOSFET | 0In Stock | Si | SMD/SMT | TO-252-3 | N-Channel | 1 Channel | 700 V | 8 A | 500 mOhms | - 30 V, 30 V | 3 V | 12 nC | - 55 C | + 150 C | 150 W | Enhancement | HiPerFET | Tube | |||
Mfr: IXFB150N65X2 TTI: IXFB150N65X2 IXYS Availability: 0In StockMOSFETs MOSFET 650V/150A Ultra Junction X2 | 0In Stock | Si | Through Hole | PLUS-264-3 | N-Channel | 1 Channel | 650 V | 150 A | 17 mOhms | - 30 V, 30 V | 2.7 V | 430 nC | - 55 C | + 150 C | 1.56 kW | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-247-3 | P-Channel | 1 Channel | 150 V | 44 A | 65 mOhms | - 15 V, 15 V | 4 V | 175 nC | - 55 C | + 150 C | 298 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 600 V | 10 A | 740 mOhms | - 30 V, 30 V | 3 V | 32 nC | - 55 C | + 150 C | 200 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 250 V | 64 A | 49 mOhms | - 20 V, 20 V | 2.5 V | 105 nC | - 55 C | + 150 C | 400 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 40 V | 300 A | 2.5 mOhms | - 20 V, 20 V | 4 V | 145 nC | - 55 C | + 175 C | 480 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 34 A | 154 mOhms | - 20 V, 20 V | - 55 C | + 150 C | 310 W | Enhancement | HiPerFET | Tube | ||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 75 A | 21 mOhms | - 20 V, 20 V | 5.5 V | 74 nC | - 55 C | + 175 C | 360 W | Enhancement | PolarHT | Tube | ||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 2.5 kV | 1.5 A | 40 Ohms | - 20 V, 20 V | 2 V | 41 nC | - 55 C | + 150 C | 250 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-3P-3 | P-Channel | 1 Channel | 500 V | 10 A | 1 Ohms | - 20 V, 20 V | 4.5 V | 50 nC | - 55 C | + 150 C | 300 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 3 kV | 2 A | 21 Ohms | - 20 V, 20 V | 3 V | - 55 C | + 150 C | 520 W | Polar3 | Tube | |||||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 75 V | 140 A | 11 mOhms | - 20 V, 20 V | 2 V | 275 nC | - 55 C | + 150 C | 540 W | Enhancement | Linear L2 | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 100 V | 64 A | 32 mOhms | - 20 V, 20 V | 2.5 V | 100 nC | - 55 C | + 150 C | 357 W | Enhancement | Linear L2 | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1 kV | 1.6 A | 10 Ohms | - 20 V, 20 V | 4.5 V | 27 nC | - 55 C | + 150 C | 100 W | Depletion | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 250 V | 30 A | 60 mOhms | - 20 V, 20 V | 2.5 V | 21 nC | - 55 C | + 150 C | 36 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 850 V | 8 A | 850 mOhms | - 30 V, 30 V | 3 V | 17 nC | 200 W | Enhancement | HiPerFET | Tube | ||||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 650 V | 80 A | 38 mOhms | - 30 V, 30 V | 3.5 V | 140 nC | - 55 C | + 150 C | 890 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 100 V | 52 A | 50 mOhms | - 20 V, 20 V | 4 V | 60 nC | - 55 C | + 150 C | 300 W | Enhancement | PolarP | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 500 V | 12 A | 500 mOhms | - 30 V, 30 V | 5.5 V | 29 nC | - 55 C | + 150 C | 200 W | Enhancement | HiPerFET | Tube | ||||
Mfr: IXFA130N10T2 TTI: IXFA130N10T2 IXYS Availability: 0In StockMOSFETs Trench T2 HiperFET Power MOSFET | 0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 100 V | 130 A | 9.1 mOhms | - 20 V, 20 V | 4.5 V | 130 nC | - 55 C | + 175 C | 360 W | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 150 V | 10 A | 350 mOhms | - 15 V, 15 V | 4.5 V | 36 nC | - 55 C | + 150 C | 83 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1 kV | 4 A | 3 Ohms | - 20 V, 20 V | 4.5 V | 39 nC | - 55 C | + 150 C | 150 W | Enhancement | HyperFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 26 A | 240 mOhms | - 30 V, 30 V | 5 V | 42 nC | - 55 C | + 150 C | 500 W | Enhancement | HiPerFET | Tube |
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