IXYS - MOSFETs
2.343 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 44 A | 30 mOhms | - 20 V, 20 V | 2.5 V | 27.4 nC | - 55 C | + 175 C | 130 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 100 V | 200 A | 7.5 mOhms | - 20 V, 20 V | 5 V | 240 nC | - 55 C | + 175 C | 800 W | Enhancement | PolarHT | Tube | ||||
0In Stock | Si | SMD/SMT | TO-268-3 | P-Channel | 1 Channel | 200 V | 68 A | 55 mOhms | - 15 V, 15 V | 4 V | 380 nC | - 55 C | + 150 C | 568 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | TO-252-3 | N-Channel | 1 Channel | 650 V | 2 A | 2.3 Ohms | - 30 V, 30 V | 3 V | 4.3 nC | - 55 C | + 150 C | 55 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-3P-3 | P-Channel | 1 Channel | 100 V | 52 A | 50 mOhms | - 20 V, 20 V | 4 V | 60 nC | - 55 C | + 150 C | 300 W | Enhancement | PolarP | Tube | ||||
Mfr: IXFA180N10T2 TTI: IXFA180N10T2 IXYS Availability: 0In StockMOSFETs Trench T2 HiperFET Power MOSFET | 0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 100 V | 180 A | 6 mOhms | - 20 V, 20 V | 2 V | 185 nC | - 55 C | + 175 C | 480 W | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1.2 kV | 1 A | 20 Ohms | - 20 V, 20 V | 2.5 V | 17.6 nC | - 55 C | + 150 C | 63 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 22 A | 145 mOhms | - 30 V, 30 V | 3.5 V | 37 nC | - 55 C | + 150 C | 37 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 32 A | 220 mOhms | - 30 V, 30 V | 3.5 V | 130 nC | - 55 C | + 150 C | 890 W | Enhancement | HiPerFET | Tube | ||||
Mfr: IXTA3N150HV-TRL TTI: IXTA3N150HV-TRL IXYS Availability: 0In StockMOSFETs N-CH SINGLE 1500V TO263D2 | 0In Stock | Si | SMD/SMT | TO-263HV-3 | N-Channel | 1 Channel | 1.5 kV | 3 A | 7.3 Ohms | - 30 V, 30 V | 2.5 V | 38.6 nC | - 55 C | + 150 C | 250 W | Enhancement | Reel | ||||
0In Stock | Si | SMD/SMT | TO-252-3 | N-Channel | 1 Channel | 200 V | 36 A | 38 mOhms | - 20 V, 20 V | 2.5 V | 21 nC | - 55 C | + 150 C | 170 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 500 V | 80 A | 65 mOhms | - 30 V, 30 V | 3 V | 197 nC | - 55 C | + 150 C | 1.04 kW | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1.2 kV | 800 mA | 20.5 Ohms | - 20 V, 20 V | 4.5 V | 14 nC | - 55 C | + 150 C | 50 W | Enhancement | Polar | Tube | ||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 500 V | 24 A | 270 mOhms | - 30 V, 30 V | 4.5 V | 48 nC | - 55 C | + 150 C | 480 W | Enhancement | Polar2 HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | P-Channel | 1 Channel | 50 V | 140 A | 9 mOhms | - 15 V, 15 V | 4 V | 200 nC | - 55 C | + 150 C | 298 W | Enhancement | TrenchP | Tube | ||||
0In Stock | Si | Through Hole | TO-264-3 | P-Channel | 1 Channel | 100 V | 170 A | 14 mOhms | - 20 V, 20 V | 2 V | 240 nC | - 55 C | + 150 C | 890 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 150 V | 400 A | 3.1 mOhms | - 20 V, 20 V | 4.5 V | 430 nC | - 55 C | + 175 C | 1.5 kW | Enhancement | HiPerFET | Tube | ||||
Mfr: MTI85W100GC-SMD TTI: MTI85W100GC-SMD IXYS Availability: 0In StockMOSFETs MOSFET MOD 100V ISOPLUSDIL | 0In Stock | Si | SMD/SMT | ISOPLUS-DIL-17 | N-Channel | 6 Channel | 100 V | 120 A | 4 mOhms | - 15 V, 15 V | 2 V | 88 nC | - 55 C | + 150 C | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 300 V | 120 A | 11 mOhms | - 20 V, 20 V | 4.5 V | 170 nC | - 55 C | + 150 C | 735 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | P-Channel | 1 Channel | 85 V | 96 A | 13 mOhms | - 15 V, 15 V | 2 V | 180 nC | - 55 C | + 150 C | 298 W | Enhancement | Tube | |||||
Mfr: IXFH60N50P3 TTI: IXFH60N50P3 IXYS Availability: 0In StockMOSFETs 500V 60A 0.1Ohm PolarP3 Power MOSFET | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 60 A | 100 mOhms | - 30 V, 30 V | 5 V | 96 nC | - 55 C | + 150 C | 1.04 mW | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 800 V | 20 A | 520 mOhms | - 30 V, 30 V | 5 V | 86 nC | - 55 C | + 150 C | 500 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 250 V | 30 A | 60 mOhms | - 20 V, 20 V | 2.5 V | 21 nC | - 55 C | + 150 C | 170 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 300 V | 88 A | 40 mOhms | - 20 V, 20 V | 5 V | 180 nC | - 55 C | + 150 C | 600 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 200 V | 26 A | 170 mOhms | - 20 V, 20 V | 2 V | 56 nC | - 55 C | + 150 C | 300 W | Enhancement | Tube |
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