IXYS - MOSFETs
2.343 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | Si | SMD/SMT | TO-263-7 | N-Channel | 1 Channel | 55 V | 110 A | 7 mOhms | - 55 C | + 175 C | 230 W | Enhancement | HiPerFET | Tube | ||||||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 200 V | 36 A | 60 Ohms | Tube | |||||||||||||
0In Stock | Si | SMD/SMT | SOIC-8 | Clare | Tube | |||||||||||||||||
Mfr: IXFA4N60P3 TTI: Not Assigned IXYS Availability: 0In StockMOSFETs Polar3 HiPerFETs MOSFET w/Fast Diode | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 600 V | 4 A | 2.2 Ohms | HiPerFET | Tube | ||||||||||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 150 V | 36 A | 110 mOhms | - 20 V, 20 V | 2.5 V | 55 nC | - 55 C | + 150 C | 300 W | Enhancement | PolarP | Reel | IXTA36P15P-TRL | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 32 A | 135 mOhms | - 30 V, 30 V | 3 V | 54 nC | - 55 C | + 150 C | 500 W | Enhancement | HiPerFET | Tube | |||||
Mfr: MMIX1T500N20X4-TU TTI: Not Assigned IXYS Availability: 0In StockMOSFETs 200V < 2mohm X4 n-channel MOSFET in SMPD -X | 0In Stock | SiC | SMD/SMT | SMPD-24 | N-Channel | 1 Channel | 200 V | 480 A | 1.99 mOhms | - 20 V, 20 V | 4.5 V | 535 nC | - 55 C | + 175 C | 1.07 kW | Enhancement | Tube | |||||
Mfr: IXTX400N20X4 TTI: Not Assigned IXYS Availability: 0In StockMOSFETs 200V 3.3mohm 400A Ultra Junction X4-Class Power MOSFET in PLUS247 | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 200 V | 400 A | 3.3 mOhms | 20 V | 4.5 V | 348 nC | - 55 C | + 175 C | 1.36 kW | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 200 V | 94 A | 10.6 mOhms | - 20 V, 20 V | 4.5 V | 77 nC | - 55 C | + 175 C | 360 W | Enhancement | Tube | ||||||
Mfr: IXFH34N65X2W TTI: Not Assigned IXYS Availability: 0In StockMOSFETs 650V 100mohm 34A X2-Class HiPerFET in TO-247 | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 34 A | 100 mOhms | 30 V | 5 V | 64 nC | - 55 C | + 150 C | 540 W | Enhancement | HiPerFET | Tube | ||||
Mfr: IXFH46N65X2W TTI: Not Assigned IXYS Availability: 0In StockMOSFETs 650V 69mohm 46A X2-Class HiPerFET in TO-247 | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 46 A | 69 mOhms | 30 V | 5.5 V | 90 nC | - 55 C | + 150 C | 660 W | Enhancement | HiPerFET | Tube | ||||
Not Available Online | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 16 A | 330 mOhms | - 30 V, 30 V | 4.5 V | 43 nC | - 55 C | + 150 C | 300 W | Enhancement | Polar2 HiPerFET | Tube | |||||
Mfr: IXFY4N60P3 TTI: Not Assigned IXYS Availability: 0In StockMOSFETs Polar3 HiPerFETs MOSFET w/Fast Diode | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 600 V | 4 A | 2.2 Ohms | HiPerFET | Tube | ||||||||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 12 A | 310 mOhms | - 30 V, 30 V | 3 V | 18.5 nC | - 55 C | + 150 C | 180 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 70 V | 180 A | 6 mOhms | - 20 V, 20 V | - 55 C | + 150 C | 400 W | Enhancement | HiPerFET | Tube | |||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 300 V | 44 A | 85 Ohms | Tube | ||||||||||||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 250 V | 62 A | 50 Ohms | Tube | |||||||||||||
0In Stock | Si | SMD/SMT | TO-268-3 | P-Channel | 1 Channel | 100 V | 36 A | 75 mOhms | Tube | |||||||||||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 20 V | 27 A | 100 Ohms | Tube | ||||||||||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | - 55 C | + 150 C | Tube | |||||||||||||||
0In Stock | Si | SMD/SMT | TO-268-3 | HiPerFET | Tube | |||||||||||||||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 600 V | 7 A | 1.15 Ohms | HiPerFET | Tube | |||||||||||||
0In Stock | Si | SMD/SMT | TO-268-3 | N-Channel | 1 Channel | 800 V | 20 A | 520 mOhms | - 30 V, 30 V | 5 V | 86 nC | - 55 C | + 150 C | 500 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 250 V | 102 A | 29 Ohms | Tube | ||||||||||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 150 V | 130 A | 12 mOhms | HiPerFET | Bulk |