IXYS - MOSFETs
2.316 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | HiPerFET | Tube | ||||||||||||||
0In Stock | Si | SMD/SMT | SOT-223-3 | N-Channel | 1 Channel | Clare | Reel | ||||||||||||||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 65 V | 130 A | 6.6 mOhms | - 20 V, 20 V | 2 V | 79 nC | - 55 C | + 175 C | 250 W | Enhancement | HiPerFET | Tube | ||||
Not Available Online | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 43 A | 100 mOhms | - 20 V, 20 V | - 40 C | + 150 C | 400 W | Enhancement | HyperFET | Tube | ||||||
Not Available Online | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 200 V | 90 A | 22 mOhms | - 20 V, 20 V | - 55 C | + 150 C | 500 W | Enhancement | HiPerFET | Tube | ||||||
Not Available Online | Si | Through Hole | PLUS-264-3 | N-Channel | 1 Channel | 800 V | 50 A | 150 mOhms | - 30 V, 30 V | - 55 C | + 150 C | 890 W | Enhancement | HiPerFET | Tube | ||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 3.5 A | 3 Ohms | - 20 V, 20 V | - 40 C | + 150 C | 80 W | Enhancement | HiPerFET | Tube | ||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 3 A | 4.8 Ohms | - 20 V, 20 V | - 55 C | + 150 C | 125 W | Enhancement | Tube | |||||||
Mfr: IXTA3N100D2HV-TRL TTI: IXTA3N100D2HV-TRL IXYS Availability: 0In StockMOSFETs N-CH SINGLE 1000V TO263D2 | 0In Stock | Si | SMD/SMT | TO-263HV-3 | N-Channel | 1 Channel | 1 kV | 3 A | 6 Ohms | - 20 V, 20 V | 4.5 V | 37.5 nC | - 55 C | + 150 C | 125 W | Depletion | Reel | ||||
0In Stock | Si | Through Hole | ISOPLUS-i5-PAK-3 | N-Channel | 1 Channel | 4.5 kV | 2 A | 20 Ohms | - 20 V, 20 V | 3.5 V | 180 nC | - 55 C | + 150 C | 220 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1.2 kV | 3 A | 4.5 Ohms | - 20 V, 20 V | 2.5 V | 39 nC | - 55 C | + 150 C | 200 W | Enhancement | Reel | |||||
Mfr: IXFK48N60Q3 TTI: IXFK48N60Q3 IXYS Availability: 0In StockMOSFETs Q3Class HiPerFET Pwr MOSFET 600V/48A | 0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 600 V | 48 A | 140 mOhms | - 30 V, 30 V | 140 nC | 1 kW | HiPerFET | Tube | |||||||
Mfr: IXFX32N100Q3 TTI: IXFX32N100Q3 IXYS Availability: 0In StockMOSFETs Q3Class HiPerFET Pwr MOSFET 1000V/32A | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 32 A | 320 mOhms | - 30 V, 30 V | 3.5 V | 195 nC | - 55 C | + 150 C | 1.25 kW | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 55 V | 440 A | 1.8 mOhms | - 20 V, 20 V | 2 V | 405 nC | - 55 C | + 175 C | 1 mW | Enhancement | HiPerFET | Tube | ||||
Mfr: IXTK550N055T2 TTI: IXTK550N055T2 IXYS Availability: 0In StockMOSFETs GigaMOS Trench T2 HiperFET PWR MOSFET | 0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 55 V | 550 A | 1.6 mOhms | - 20 V, 20 V | 2 V | 595 nC | - 55 C | + 175 C | 1.25 mW | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 250 V | 180 A | 12.9 mOhms | - 20 V, 20 V | 5 V | 345 nC | - 55 C | + 150 C | 1.39 kW | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | TO-263-7 | N-Channel | 1 Channel | 40 V | 220 A | 2.8 mOhms | - 20 V, 20 V | 4 V | 112 nC | - 55 C | + 175 C | 360 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 600 V | 82 A | 78 mOhms | - 30 V, 30 V | 5 V | 240 nC | - 55 C | + 150 C | 625 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 150 V | 100 A | 13 mOhms | - 20 V, 20 V | 5 V | 240 nC | - 55 C | + 175 C | 300 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 24 A | 150 mOhms | - 30 V, 30 V | 2.5 V | 98 nC | - 55 C | + 150 C | 208 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 500 V | 36 A | 170 mOhms | - 30 V, 30 V | 5 V | 93 nC | - 55 C | + 150 C | 540 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 600 V | 10 A | 740 mOhms | - 30 V, 30 V | - 55 C | + 150 C | 200 W | Enhancement | Tube | |||||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 100 V | 160 A | 7 mOhms | - 55 C | + 175 C | 430 W | Enhancement | HiPerFET | Tube | |||||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 100 V | 180 A | 6.4 mOhms | - 55 C | + 175 C | 480 W | Enhancement | HiPerFET | Tube | |||||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 600 V | 30 A | 240 mOhms | - 30 V, 30 V | - 55 C | + 150 C | 540 W | Enhancement | Tube |
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