IXYS - MOSFETs
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Part | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 20 A | 185 mOhms | - 30 V, 30 V | 2.5 V | 27 nC | - 55 C | + 150 C | 290 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 34 A | 96 mOhms | - 30 V, 30 V | 3 V | 54 nC | - 55 C | + 150 C | 540 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 2 kV | 3 A | 8 Ohms | - 20 V, 20 V | 3 V | 70 nC | - 55 C | + 150 C | 520 W | Enhancement | Polar3 | Tube | ||||
0In Stock | Si | SMD/SMT | TO-252-3 | N-Channel | 1 Channel | 55 V | 90 A | 8.4 mOhms | - 20 V, 20 V | 2 V | 42 nC | - 55 C | + 175 C | 150 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.5 kV | 12 A | 2 Ohms | - 30 V, 30 V | 4.5 V | 106 nC | - 55 C | + 150 C | 890 W | Enhancement | Tube | |||||
Mfr: IXFA20N85XHV TTI: IXFA20N85XHV IXYS Availability: 0In StockMOSFETs 850V Ultra Junction X-Class Pwr MOSFET | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 850 V | 20 A | 330 mOhms | - 30 V, 30 V | 3.5 V | 63 nC | - 55 C | + 150 C | 540 W | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 250 V | 180 A | 12.9 mOhms | - 20 V, 20 V | 5 V | 345 nC | - 55 C | + 150 C | 1.39 kW | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 1.6 A | 2.3 Ohms | - 20 V, 20 V | 4.5 V | 23.7 nC | - 55 C | + 150 C | 100 W | Depletion | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 3 A | 1.5 Ohms | - 20 V, 20 V | 4.5 V | 40 nC | - 55 C | + 150 C | 125 W | Depletion | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 60 A | 40 mOhms | - 20 V, 20 V | 3 V | 73 nC | - 55 C | + 175 C | 500 W | Enhancement | HiPerFET | Tube | ||||
Mfr: IXFP180N10T2 TTI: IXFP180N10T2 IXYS Availability: 0In StockMOSFETs TRENCHT2 HIPERFET PWR MOSFET 100V 180A | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 180 A | 6 mOhms | - 20 V, 20 V | 2 V | 185 nC | - 55 C | + 175 C | 480 W | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 52 A | 120 mOhms | - 30 V, 30 V | 4.5 V | 113 nC | - 55 C | + 150 C | 960 W | Enhancement | HiPerFET | Tube | ||||
Mfr: IXFK360N15T2 TTI: IXFK360N15T2 IXYS Availability: 0In StockMOSFETs GigaMOS Trench T2 HiperFET PWR MOSFET | 0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 150 V | 360 A | 4 mOhms | - 20 V, 20 V | 2.5 V | 715 nC | - 55 C | + 175 C | 1.67 mW | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 200 V | 16 A | 80 mOhms | - 20 V, 20 V | 4.5 V | 208 nC | - 55 C | + 150 C | 695 W | Depletion | Tube | |||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 500 V | 16 A | 300 mOhms | - 20 V, 20 V | 2 V | 199 nC | - 55 C | + 150 C | 695 W | Depletion | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 60 A | 18 mOhms | - 20 V, 20 V | 2.5 V | 49 nC | - 55 C | + 175 C | 176 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 500 V | 44 A | 140 mOhms | - 30 V, 30 V | - 55 C | + 150 C | 650 W | Enhancement | HiPerFET | Tube | ||||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 800 V | 3.5 A | 3 Ohms | - 30 V, 30 V | 5.5 V | 14.2 nC | - 55 C | + 150 C | 100 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 64 A | 96 mOhms | - 30 V, 30 V | 5 V | 200 nC | - 55 C | + 150 C | 1.04 mW | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 800 V | 7 A | 1.4 Ohms | - 30 V, 30 V | 3 V | 32 nC | - 55 C | + 150 C | 200 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 800 V | 10 A | 1.1 Ohms | - 30 V, 30 V | 3 V | 40 nC | - 55 C | + 150 C | 300 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 800 V | 10 A | 1.1 Ohms | - 30 V, 30 V | 5.5 V | 40 nC | - 55 C | + 150 C | 300 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 150 V | 96 A | 24 mOhms | - 20 V, 20 V | - 55 C | + 175 C | 480 W | Enhancement | Tube | |||||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 200 V | 140 A | 18 mOhms | - 20 V, 20 V | 2.5 V | 240 nC | - 55 C | + 175 C | 800 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 300 V | 88 A | 40 mOhms | - 20 V, 20 V | 2.5 V | 180 nC | - 55 C | + 150 C | 600 W | Enhancement | Tube |
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