IXYS - MOSFETs
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Part | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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Mfr: IXFQ22N60P3 TTI: IXFQ22N60P3 IXYS Availability: 0In StockMOSFETs 600V 22A 0.36Ohm PolarP3 Power MOSFET | 0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 600 V | 22 A | 360 mOhms | - 30 V, 30 V | 5 V | 38 nC | - 55 C | + 150 C | 500 W | Enhancement | HiPerFET | Tube | |||
Mfr: IXFK32N80Q3 TTI: IXFK32N80Q3 IXYS Availability: 0In StockMOSFETs Q3Class HiPerFET Pwr MOSFET 800V/32A | 0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 800 V | 32 A | 270 mOhms | - 30 V, 30 V | 140 nC | + 150 C | 1 kW | HiPerFET | Tube | ||||||
Mfr: IXFK64N60Q3 TTI: IXFK64N60Q3 IXYS Availability: 0In StockMOSFETs Q3Class HiPerFET Pwr MOSFET 600V/64A | 0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 600 V | 64 A | 95 mOhms | - 30 V, 30 V | 190 nC | 1.25 kW | HiPerFET | Tube | |||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.5 kV | 3 A | 3.85 Ohms | - 30 V, 30 V | 2.5 V | 67 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | SMPD-24 | N-Channel | 200 V | 156 A | 8.3 mOhms | HiPerFET | Tube | ||||||||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 800 V | 13 A | 420 mOhms | - 30 V, 30 V | 5 V | 105 nC | - 55 C | + 150 C | 208 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 12 A | 300 mOhms | - 30 V, 30 V | 2.5 V | - 55 C | + 150 C | 40 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | Through Hole | TO-3P | N-Channel | 100 V | 60 A | 18 mOhms | - 30 V, 30 V | 2.5 V | - 55 C | + 175 C | 176 W | HiPerFET | Tube | |||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 800 V | 10 A | 570 mOhms | - 30 V, 30 V | - 55 C | + 150 C | 166 W | Enhancement | HiPerFET | Tube | ||||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 100 V | 160 A | 7 mOhms | - 55 C | + 175 C | 430 W | Enhancement | HiPerFET | Tube | |||||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1 kV | 750 mA | 17 Ohms | - 30 V, 30 V | 4.5 V | 7.8 nC | - 55 C | + 150 C | 40 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 2.5 kV | 5 A | 8.8 Ohms | - 30 V, 30 V | 5 V | 200 nC | - 55 C | + 150 C | 960 W | Enhancement | Tube | |||||
Mfr: IXFX32N80Q3 TTI: IXFX32N80Q3 IXYS Availability: 0In StockMOSFETs Q3Class HiPerFET Pwr MOSFET 800V/32A | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 800 V | 32 A | 270 mOhms | - 30 V, 30 V | 140 nC | + 150 C | 1 kW | HiPerFET | Tube | ||||||
0In Stock | Si | Through Hole | TO-247-3 | P-Channel | 200 V | 30 A | 93 mOhms | Tube | |||||||||||||
Mfr: IXFT86N30T TTI: IXFT86N30T IXYS Availability: 0In StockMOSFETs TRENCH HIPERFET PWR MOSFET 300V 86A | 0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 300 V | 86 A | 43 mOhms | - 20 V, 20 V | 5 V | 180 nC | - 55 C | + 150 C | 830 W | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 300 V | 88 A | 40 mOhms | - 20 V, 20 V | 2.5 V | 180 nC | - 55 C | + 150 C | 600 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 16 A | 470 mOhms | - 30 V, 30 V | 3 V | 36 nC | - 55 C | + 150 C | 347 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 500 V | 46 A | 160 mOhms | - 30 V, 30 V | 6 V | 260 nC | - 55 C | + 150 C | 700 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1 kV | 3 A | 4.8 Ohms | - 20 V, 20 V | - 55 C | + 150 C | 125 W | Enhancement | Tube | |||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 300 V | 36 A | 110 mOhms | - 20 V, 20 V | 2.5 V | 30 nC | - 55 C | + 150 C | 347 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 1.2 kV | 20 A | 570 mOhms | - 30 V, 30 V | 6.5 V | 193 nC | - 55 C | + 150 C | 780 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 20 A | 390 mOhms | - 30 V, 30 V | - 55 C | + 150 C | 780 W | Enhancement | HiPerFET | Tube | ||||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 200 V | 86 A | 29 mOhms | - 30 V, 30 V | 5 V | 90 nC | - 55 C | + 175 C | 480 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 650 V | 20 A | 185 mOhms | - 30 V, 30 V | 2.5 V | 27 nC | - 55 C | + 150 C | 290 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 250 V | 86 A | 37 mOhms | - 20 V, 20 V | 3 V | - 55 C | + 150 C | 540 W | HiPerFET | Tube |
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