IXYS - MOSFETs
2.316 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 200 V | 156 A | 8 mOhms | - 20 V, 20 V | 3 V | 358 nC | - 55 C | + 175 C | 600 W | Enhancement | HiPerFET | Tube | ||||
Mfr: IXFQ28N60P3 TTI: IXFQ28N60P3 IXYS Availability: 0In StockMOSFETs 600V 28A 0.26Ohm PolarP3 Power MOSFET | 0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 600 V | 28 A | 260 mOhms | - 30 V, 30 V | 5 V | 50 nC | - 55 C | + 150 C | 695 W | Enhancement | HiPerFET | Tube | |||
Mfr: IXFK320N17T2 TTI: IXFK320N17T2 IXYS Availability: 0In StockMOSFETs GigaMOS Trench T2 HiperFET PWR MOSFET | 0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 170 V | 320 A | 5.2 mOhms | - 20 V, 20 V | 2.5 V | 640 nC | - 55 C | + 175 C | 1.67 mW | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 600 V | 26 A | 270 mOhms | - 30 V, 30 V | 2.5 V | 72 nC | - 55 C | + 150 C | 460 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 100 V | 130 A | 10.1 mOhms | - 20 V, 20 V | 2 V | 130 nC | - 55 C | + 175 C | 360 W | Enhancement | Reel | |||||
Mfr: IXFT80N65X2HV-TRL TTI: IXFT80N65X2HV-TRL IXYS Availability: 0In StockMOSFETs N-CH SINGLE 650V TO268AA | 0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | 1 Channel | 650 V | 80 A | 38 mOhms | - 30 V, 30 V | 3.5 V | 140 nC | 890 W | Enhancement | HiPerFET | Reel | ||||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 500 V | 20 A | 300 mOhms | HiPerFET | Tube | ||||||||||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 800 V | 16 A | 600 mOhms | - 30 V, 30 V | - 55 C | + 150 C | 460 W | Enhancement | HiPerFET | Tube | ||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 800 V | 20 A | 290 mOhms | - 30 V, 30 V | 5 V | 150 nC | - 55 C | + 150 C | 300 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 250 V | 42 A | 84 mOhms | - 20 V, 20 V | - 55 C | + 150 C | 300 W | Enhancement | Tube | |||||||
Mfr: IXTX600N04T2 TTI: IXTX600N04T2 IXYS Availability: 0In StockMOSFETs GigaMOS Trench T2 HiperFET PWR MOSFET | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 40 V | 600 A | 1.5 mOhms | - 20 V, 20 V | 1.5 V | 590 nC | - 55 C | + 175 C | 1.25 mW | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 100 V | 133 A | 9 mOhms | - 20 V, 20 V | 5 V | 235 nC | - 55 C | + 175 C | 300 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 800 V | 32 A | 270 mOhms | - 30 V, 30 V | - 55 C | + 150 C | 830 W | Enhancement | HiPerFET | Tube | ||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.2 kV | 15 A | 500 mOhms | - 30 V, 30 V | 6.5 V | 225 nC | - 55 C | + 150 C | 320 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 150 V | 102 A | 18 mOhms | - 20 V, 20 V | - 55 C | + 175 C | 455 W | Enhancement | HiPerFET | Tube | ||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 100 V | 130 A | 9.1 mOhms | HiPerFET | Tube | ||||||||||||
0In Stock | Si | Through Hole | TO-247-3 | P-Channel | 150 V | 22 A | 120 mOhms | Tube | |||||||||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 100 V | 250 A | 6.5 mOhms | - 20 V, 20 V | 3 V | 205 nC | - 55 C | + 175 C | 1.25 mW | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 300 V | 94 A | 36 mOhms | HiPerFET | Tube | ||||||||||||
Mfr: IXFQ50N50P3 TTI: IXFQ50N50P3 IXYS Availability: 0In StockMOSFETs N-Channel: Power MOSFET w/Fast Diode | 0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 500 V | 50 A | 125 mOhms | - 30 V, 30 V | 5 V | 85 nC | - 55 C | + 150 C | 960 W | Enhancement | HiPerFET | Tube | |||
Mfr: IXFR24N100Q3 TTI: IXFR24N100Q3 IXYS Availability: 0In StockMOSFETs Q3Class HiPerFET Pwr MOSFET 1000V/18A | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 18 A | 490 mOhms | - 30 V, 30 V | 140 nC | 500 W | HiPerFET | Tube | |||||||
Mfr: IXFX66N85X TTI: IXFX66N85X IXYS Availability: 0In StockMOSFETs 850V Ultra Junction X-Class Pwr MOSFET | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 850 V | 66 A | 65 mOhms | - 30 V, 30 V | 3.5 V | 230 nC | - 55 C | + 150 C | 1.25 kW | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1.7 kV | 16 A | - 20 V, 20 V | 2.5 V | 65 nC | - 55 C | + 150 C | 150 W | Enhancement | BIMOSFET | Tube | |||||
0In Stock | Si | Through Hole | PLUS-264-3 | N-Channel | 1 Channel | 1.1 kV | 40 A | 260 mOhms | - 30 V, 30 V | 3.5 V | 300 nC | - 55 C | + 150 C | 1.56 kW | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 500 V | 16 A | 400 mOhms | - 30 V, 30 V | 3 V | 43 nC | - 55 C | + 150 C | 300 W | Enhancement | Tube |