IXYS - MOSFETs
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Part | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 100 V | 64 A | 32 mOhms | - 20 V, 20 V | 2.5 V | 100 nC | - 55 C | + 150 C | 357 W | Enhancement | Linear L2 | Tube | ||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 2.5 kV | 1.5 A | 40 Ohms | - 20 V, 20 V | 2 V | 41 nC | - 55 C | + 150 C | 250 W | Enhancement | Tube | |||||
Mfr: IXFP20N85X TTI: IXFP20N85X IXYS Availability: 0In StockMOSFETs 850V Ultra Junction X-Class Pwr MOSFET | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 850 V | 20 A | 330 mOhms | - 30 V, 30 V | 3.5 V | 63 nC | - 55 C | + 150 C | 540 W | Enhancement | HiPerFET | Tube | |||
Mfr: IXFA60N25X3 TTI: IXFA60N25X3 IXYS Availability: 0In StockMOSFETs 250V/60A Ultra Junct ion X3-Class MOSFET | 0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 250 V | 60 A | 19 mOhms | - 20 V, 20 V | 2.5 V | 50 nC | - 55 C | + 150 C | 320 W | Enhancement | HiPerFET | Tube | |||
Mfr: IXFH170N25X3 TTI: IXFH170N25X3 IXYS Availability: 0In StockMOSFETs 250V/170A Ultra Junc tion X3-Class MOSFE | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 250 V | 170 A | 6.1 mOhms | - 20 V, 20 V | 2.5 V | 190 nC | - 55 C | + 150 C | 960 W | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 8 A | 320 mOhms | - 30 V, 30 V | 3.5 V | 113 nC | - 55 C | + 150 C | 860 W | Enhancement | HiPerFET | Tube | ||||
Mfr: IXTA2N100P-TRL TTI: IXTA2N100P-TRL IXYS Availability: Not Available OnlineMOSFETs N-CH SINGLE 1000V TO263D2 | Not Available Online | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1 kV | 2 A | 7.5 Ohms | - 20 V, 20 V | 2.5 V | 24.3 nC | - 55 C | + 150 C | 86 W | Enhancement | Polar | Reel | |||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 250 V | 30 A | 140 mOhms | - 20 V, 20 V | 2.5 V | 130 nC | - 55 C | + 150 C | 355 W | Enhancement | Linear L2 | Tube | ||||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 200 V | 86 A | 13 mOhms | - 20 V, 20 V | 4.5 V | 70 nC | - 55 C | + 175 C | 300 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 650 V | 4 A | 850 mOhms | - 30 V, 30 V | 3 V | 8.3 nC | - 55 C | + 150 C | 80 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | TO-252-3 | N-Channel | 1 Channel | 650 V | 8 A | 500 mOhms | - 30 V, 30 V | 3 V | 12 nC | - 55 C | + 150 C | 150 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 22 A | 160 mOhms | - 30 V, 30 V | 2.7 V | 38 nC | - 55 C | + 150 C | 390 W | Enhancement | HiPerFET | Tube | ||||
Mfr: IXFH34N65X2 TTI: IXFH34N65X2 IXYS Availability: 0In StockMOSFETs MOSFET 650V/34A Ultra Junction X2 | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 34 A | 105 mOhms | - 30 V, 30 V | 2.7 V | 56 nC | - 55 C | + 150 C | 540 W | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 10 A | 1.5 Ohms | - 20 V, 20 V | 4.5 V | 200 nC | - 55 C | + 150 C | 695 W | Depletion | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 12 A | 300 mOhms | - 30 V, 30 V | 2.5 V | 17.7 nC | - 55 C | + 150 C | 180 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.7 kV | 1 A | 16 Ohms | - 20 V, 20 V | 2.5 V | 47 nC | - 55 C | + 150 C | 290 W | Depletion | Tube | |||||
0In Stock | Si | SMD/SMT | SOT-89-3 | N-Channel | 1 Channel | 400 V | 300 mA | 9 Ohms | - 15 V, 15 V | 3.1 V | - 40 C | + 110 C | 1.1 W | Depletion | Reel | ||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 850 V | 8 A | 850 mOhms | - 30 V, 30 V | 3 V | 17 nC | - 55 C | + 150 C | 200 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 200 V | 140 A | 9.6 mOhms | - 20 V, 20 V | 2.5 V | 127 nC | - 55 C | + 150 C | 480 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 300 V | 26 A | 66 mOhms | - 20 V, 20 V | 2.5 V | 22 nC | - 55 C | + 150 C | 170 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 300 V | 56 A | 27 mOhms | - 20 V, 20 V | 2.5 V | 56 nC | - 55 C | + 150 C | 36 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 300 V | 72 A | 19 mOhms | - 20 V, 20 V | 2.5 V | 82 nC | - 55 C | + 150 C | 390 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 850 V | 8 A | 850 mOhms | - 30 V, 30 V | 3 V | 17 nC | - 55 C | + 150 C | 33 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 300 V | 56 A | 27 mOhms | - 20 V, 20 V | 2.5 V | 56 nC | - 55 C | + 150 C | 320 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 200 V | 60 A | 40 mOhms | - 20 V, 20 V | 3 V | 73 nC | - 55 C | + 175 C | 500 W | Enhancement | HiPerFET | Tube |
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