IXYS - MOSFETs
2.316 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 250 V | 100 A | 27 mOhms | - 20 V, 20 V | 5 V | 185 nC | - 55 C | + 150 C | 600 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 500 V | 64 A | 85 mOhms | - 30 V, 30 V | 3 V | 150 nC | - 55 C | + 150 C | 830 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1.2 kV | 3 A | 4.5 Ohms | - 20 V, 20 V | 5 V | 39 nC | - 55 C | + 150 C | 200 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 250 V | 100 A | 27 mOhms | - 20 V, 20 V | 5 V | 185 nC | - 55 C | + 150 C | 600 W | Enhancement | PolarHT | Tube | ||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 500 V | 36 A | 170 mOhms | - 30 V, 30 V | 5 V | 85 nC | - 55 C | + 150 C | 540 W | Enhancement | PolarHV | Tube | ||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 100 V | 130 A | 8.5 mOhms | - 55 C | + 175 C | 360 W | Enhancement | HiPerFET | Tube | |||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 3.5 A | 3 Ohms | - 30 V, 30 V | 3 V | 14.2 nC | - 55 C | + 150 C | 100 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1 kV | 1.2 A | 13 Ohms | - 20 V, 20 V | 2.5 V | 15.5 nC | - 55 C | + 150 C | 50 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 300 V | 36 A | 110 mOhms | - 30 V, 30 V | 3 V | 70 nC | - 55 C | + 150 C | 300 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 500 V | 26 A | 230 mOhms | - 30 V, 30 V | 3 V | 65 nC | - 55 C | + 150 C | 400 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 100 V | 160 A | 5.8 mOhms | - 30 V, 30 V | 2.5 V | 132 nC | - 55 C | + 175 C | 430 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 1 kV | 32 A | 320 mOhms | - 30 V, 30 V | 6.5 V | 225 nC | - 55 C | + 150 C | 960 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1.2 kV | 1.4 A | 10.5 Ohms | - 20 V, 20 V | 4.5 V | 24.8 nC | - 55 C | + 150 C | 86 W | Enhancement | Polar | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 200 V | 86 A | 29 mOhms | - 30 V, 30 V | - 55 C | + 175 C | 480 W | HiPerFET | Tube | |||||||
Mfr: IXFH20N85X TTI: IXFH20N85X IXYS Availability: 0In StockMOSFETs 850V Ultra Junction X-Class Pwr MOSFET | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 850 V | 20 A | 330 mOhms | - 30 V, 30 V | 3.5 V | 63 nC | - 55 C | + 150 C | 540 W | Enhancement | HiPerFET | Tube | |||
Mfr: IXFK50N85X TTI: IXFK50N85X IXYS Availability: 0In StockMOSFETs 850V Ultra Junction X-Class Pwr MOSFET | 0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 850 V | 50 A | 105 mOhms | - 30 V, 30 V | 3.5 V | 152 nC | - 55 C | + 150 C | 890 W | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 7 A | 1.9 Ohms | - 30 V, 30 V | 3 V | 47 nC | - 55 C | + 150 C | 300 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1 kV | 750 mA | 17 Ohms | - 30 V, 30 V | 2.5 V | 7.8 nC | - 55 C | + 150 C | 40 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 500 V | 15 A | 480 mOhms | - 20 V, 20 V | 2.5 V | 123 nC | - 55 C | + 150 C | 300 W | Enhancement | Linear L2 | Tube | ||||
0In Stock | Si | SMD/SMT | TO-263HV-2 | N-Channel | 1 Channel | 1.7 kV | 1 A | 16 Ohms | - 20 V, 20 V | 4.5 V | 47 nC | - 55 C | + 150 C | 290 W | Depletion | Tube | |||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 3 kV | 1 A | 50 Ohms | - 20 V, 20 V | 2 V | 30.6 nC | - 55 C | + 150 C | 195 W | Enhancement | Tube | |||||
Mfr: IXFK100N65X2 TTI: IXFK100N65X2 IXYS Availability: 0In StockMOSFETs MOSFET 650V/100A Ultra Junction X2 | 0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 650 V | 100 A | 30 mOhms | - 30 V, 30 V | 2.7 V | 180 nC | - 55 C | + 150 C | 1.04 kW | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 300 V | 88 A | 40 mOhms | - 20 V, 20 V | 5 V | 180 nC | - 55 C | + 150 C | 600 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 1 kV | 100 mA | 80 Ohms | - 20 V, 20 V | - 55 C | + 150 C | 25 W | Enhancement | Tube | |||||||
Mfr: IXFH80N25X3 TTI: IXFH80N25X3 IXYS Availability: 0In StockMOSFETs 250V/80A Ultra Junct ion X3-Class MOSFET | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 250 V | 80 A | 16 mOhms | - 20 V, 20 V | 2.5 V | 83 nC | - 55 C | + 150 C | 390 W | Enhancement | HiPerFET | Tube |
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