IXYS - SiC MOSFETs
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Part | Availability | Purchasing | RoHS/Lead | Manufacturer | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename |
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Mfr: IXSA40N120L2-7TR TTI: IXSA40N120L2-7TR IXYS Availability: 800In StockSiC MOSFETs 1200V 80mohm (40A a. 25C) SiC MOSFET in TO267-7L | 800In Stock | IXYS | SMD/SMT | TO-263-7L | N-Channel | 1 Channel | 1.2 kV | 41 A | 104 mOhms | - 5 V, + 20 V | 4.5 V | 53 nC | - 55 C | + 175 C | 250 W | Enhancement | ||||
Mfr: IXSH80N120L2KHV TTI: IXSH80N120L2KHV IXYS Availability: 420In StockSiC MOSFETs 1200V 30mohm (80A a. 25C) SiC MOSFET in TO247-4L | 420In Stock | IXYS | Through Hole | TO-247-4L | N-Channel | 1 Channel | 1.2 kV | 79 A | 39 mOhms | - 5 V, + 20 V | 135 nC | - 55 C | + 175 C | 395 W | Enhancement | |||||
Mfr: IXSA80N120L2-7TR TTI: IXSA80N120L2-7TR IXYS Availability: 800In StockSiC MOSFETs 1200V 30mohm (80A a. 25C) SiC MOSFET in TO267-7L | 800In Stock | IXYS | SMD/SMT | TO-263-7L | N-Channel | 1 Channel | 1.2 kV | 79 A | 39 mOhms | - 5 V, + 20 V | 4.5 V | 135 nC | - 55 C | + 175 C | 395 W | Enhancement | ||||
Mfr: IXSH40N120L2KHV TTI: IXSH40N120L2KHV IXYS Availability: 420In StockSiC MOSFETs 1200V 80mohm (40A a. 25C) SiC MOSFET in TO247-4L | 420In Stock | IXYS | Through Hole | TO-247-4L | N-Channel | 1 Channel | 1.2 kV | 41 A | 104 mOhms | - 5 V, + 20 V | 4.5 V | 53 nC | - 55 C | + 175 C | 250 W | Enhancement | ||||
Mfr: LSIC1MO120E0160 TTI: LSIC1MO120E0160 IXYS Availability: 420In StockSiC MOSFETs 1200 V 160 mOhm SiC Mosfet | 420In Stock | IXYS | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.2 kV | 22 A | 200 mOhms | - 5 V, + 20 V | 1.8 V | 57 nC | - 55 C | + 150 C | 125 W | Enhancement | ||||
Mfr: IXSJ43N120R1 TTI: IXSJ43N120R1 IXYS Availability: 0In StockSiC MOSFETs 1200V 36mohm (43A a. 25C) SiC MOSFET in isolated TO247-3L | 0In Stock | IXYS | Through Hole | TO-247-3L | N-Channel | 1 Channel | 1.2 kV | 45 A | 47 mOhms | - 4 V, + 21 V | 4.8 V | 79 nC | - 40 C | + 150 C | 142 W | Enhancement | ||||
Mfr: IXSH20N120L2KHV TTI: IXSH20N120L2KHV IXYS Availability: 0In StockSiC MOSFETs SIC MOSFET 1200V 20A TO-247-4L | 0In Stock | IXYS | Through Hole | TO-247-4 | N-Channel | 1 Channel | 1.2 kV | 20 A | 208 mOhms | - 5 V, 20 V | 4.5 V | 29 nC | - 55 C | + 175 C | 136 W | Enhancement | ||||
Mfr: IXSH40N65L2KHV TTI: IXSH40N65L2KHV IXYS Availability: 0In StockSiC MOSFETs SIC MOSFET 650V 43A TO-247-4L | 0In Stock | IXYS | Through Hole | TO-247-4 | N-Channel | 1 Channel | 650 V | 43 A | 78 mOhms | - 5 V, 20 V | 4.5 V | 64 nC | - 55 C | + 175 C | 174 W | Enhancement | ||||
Mfr: IXSJ80N120R1 TTI: IXSJ80N120R1 IXYS Availability: 0In StockSiC MOSFETs 1200V 18mohm (30A a. 25C) SiC MOSFET in isolated TO247-3L | 0In Stock | IXYS | Through Hole | TO-247-3L | N-Channel | 1 Channel | 1.2 kV | 85 A | 22.5 mOhms | - 4 V, + 21 V | 4.8 V | 154 nC | - 40 C | + 150 C | 266 W | Enhancement | ||||
Mfr: IXSJ25N120R1 TTI: IXSJ25N120R1 IXYS Availability: 0In StockSiC MOSFETs 1200V 62mohm (25A a. 25C) SiC MOSFET in isolated TO247-3L | 0In Stock | IXYS | Through Hole | TO-247-3L | N-Channel | 1 Channel | 1.2 kV | 28 A | 81 mOhms | - 4 V, + 21 V | 4.8 V | 52 nC | - 40 C | + 150 C | 75.3 W | Enhancement | ||||
Mfr: IXSH60N65L2KHV TTI: IXSH60N65L2KHV IXYS Availability: 0In StockSiC MOSFETs SIC MOSFET 650V 60A TO-247-4L | 0In Stock | IXYS | Through Hole | TO-247-4 | N-Channel | 1 Channel | 650 V | 60 A | 53 mOhms | - 5 V, 20 V | 4.5 V | 94.7 nC | - 55 C | + 175 C | 249 W | Enhancement | ||||
Mfr: LSIC1MO170E0750 TTI: LSIC1MO170E0750 IXYS Availability: 0In StockSiC MOSFETs SIC MOSFET 1700V 750MO TO-247 | 0In Stock | IXYS | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.7 kV | 6.2 A | 1 Ohms | - 5 V, + 20 V | 4 V | 13 nC | - 55 C | + 175 C | 60 W | Enhancement | ||||
0In Stock | IXYS | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.2 kV | 39 A | 80 mOhms | - 5 V, + 20 V | 2.8 V | 95 nC | - 55 C | + 150 C | 179 W | Enhancement | |||||
0In Stock | IXYS | SMD/SMT | HiPerFET | |||||||||||||||||
0In Stock | IXYS | SMD/SMT | TO-263-7 | N-Channel | 1 Channel | 650 V | 43 A | 78 mOhms | - 5 V, 20 V | 4.5 V | 64 nC | - 55 C | + 175 C | 174 W | Enhancement | |||||
0In Stock | IXYS | SMD/SMT | TOLL-8 | N-Channel | 1 Channel | 650 V | 43 A | 78 mOhms | - 5 V, 20 V | 4.5 V | 64 nC | - 55 C | + 175 C | 174 W | Enhancement | |||||
Mfr: IXSA65N120L2-7TR TTI: Not Assigned IXYS Availability: 0In StockSiC MOSFETs 1200V 40mohm (65A a. 25C) SiC MOSFET in TO-263-7L | 0In Stock | IXYS | SMD/SMT | TO-263-7L | N-Channel | 1 Channel | 1.2 kV | 65 A | 53 mOhms | - 5 V, + 20 V | 4.5 V | 110 nC | - 55 C | + 175 C | 417 W | Enhancement | ||||
Mfr: LSIC1MO170T0750 TTI: Not Assigned IXYS Availability: 0In StockSiC MOSFETs 1700V 750MOHM SIC MOSF TO-263 | 0In Stock | IXYS | SMD/SMT | D2PAK-7 (TO-263-7) | N-Channel | 1 Channel | 1.7 kV | 6.4 A | 750 mOhms | - 20 V, + 20 V | 1.8 V | 11 nC | - 55 C | + 175 C | 65 W | Enhancement | ||||
Mfr: IXSJ80N120R1K TTI: Not Assigned IXYS Availability: 0In StockSiC MOSFETs 1200V 36mOhm (43A at 25C) SiC MOSFET in isolated TO247-4L | 0In Stock | IXYS | Through Hole | ISO247-4 | N-Channel | 1 Channel | 1.2 kV | 85 A | 23.4 mOhms | 21 V | 4.8 V | 155 nC | - 40 C | + 150 C | 223.2 W | Enhancement | ||||
Mfr: IXSA110N65L2-7TR TTI: Not Assigned IXYS Availability: 0In StockSiC MOSFETs 650V 25mohm (110A a. 25C) SiC MOSFET in TO263-7L | 0In Stock | IXYS | SMD/SMT | TO-263-7L | N-Channel | 1 Channel | 650 V | 111 A | 33 mOhms | - 5 V, + 20 V | 4.5 V | 125 nC | - 55 C | + 175 C | 600 W | Enhancement | ||||
Mfr: IXSJ43N120R1K TTI: Not Assigned IXYS Availability: 0In StockSiC MOSFETs 1200V 18mOhm (30A at 25C) SiC MOSFET in isolated TO247-4L | 0In Stock | IXYS | Through Hole | ISO247-4 | N-Channel | 1 Channel | 1.2 kV | 46 A | 47 mOhms | 21 V | 4.8 V | 79 nC | - 40 C | + 150 C | 143.7 W | Enhancement | ||||
0In Stock | IXYS | SMD/SMT | TTOLL-8 | N-Channel | 1 Channel | 650 V | 60 A | 53 mOhms | - 5 V, 20 V | 4.5 V | 94.7 nC | - 55 C | + 175 C | 249 W | Enhancement | |||||
0In Stock | IXYS | SMD/SMT | TO-263-7 | N-Channel | 1 Channel | 1.2 kV | 20 A | 208 mOhms | - 5 V, 20 V | 4.5 V | 29 nC | - 55 C | + 175 C | 136 W | Enhancement | |||||
Mfr: IXSG110N65L2K TTI: Not Assigned IXYS Availability: 0In StockSiC MOSFETs 650V 25mohm (110A a. 25C) SiC MOSFET in TOLL | 0In Stock | IXYS | SMD/SMT | TOLL-8 | N-Channel | 1 Channel | 650 V | 111 A | 33 mOhms | - 5 V, + 20 V | 4.5 V | 125 nC | - 55 C | + 175 C | 600 W | Enhancement | ||||
0In Stock | IXYS | SMD/SMT | TO-263-7 | N-Channel | 1 Channel | 650 V | 60 A | 53 mOhms | - 5 V, 20 V | 4.5 V | 94.7 nC | - 55 C | + 175 C | 249 W | Enhancement |
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