Toshiba - IGBTs
52 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Package / Case | Mounting Style | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Maximum Gate Emitter Voltage | Continuous Collector Current at 25 C | Pd - Power Dissipation | Minimum Operating Temperature | Maximum Operating Temperature | Series | Qualification | Packaging |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Not Available Online | Si | TO-3PN-3 | Through Hole | Single | 1.8 kV | 2.9 V | - 25 V, 25 V | 40 A | 375 W | - 55 C | + 175 C | GT40WR21 | |||||
Mfr: GT40QR21(STA1ED TTI: Not Assigned Toshiba Availability: Not Available OnlineIGBTs IGBT 1200V 40A TO3PN | Not Available Online | Si | TO-3PN-3 | Through Hole | Single | 1.2 kV | 1.5 V | - 25 V, 25 V | 40 A | 230 W | - 55 C | + 175 C | GT40QR21 |
