Toshiba - MOSFETs
3.381 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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Mfr: TK11S10N1L,LXHQ TTI: Not Assigned Toshiba Availability: Not Available OnlineMOSFETs PD=65W F=1MHZ AEC-Q101 | Not Available Online | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 100 V | 11 A | 28 mOhms | 20 V | 2.5 V | 15 nC | - 55 C | + 175 C | 65 W | Enhancement | AEC-Q101 | Reel | |||
0In Stock | Si | Reel | |||||||||||||||||||
0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 60 V | 110 A | 1.7 mOhms | 10 V | 1.5 V | 104 nC | - 55 C | + 175 C | 170 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | SOP-Advance-8 | N-Channel | 1 Channel | 150 V | 64 A | 11 mOhms | 20 V | 4.3 V | 44 nC | + 175 C | 210 W | Enhancement | Reel | ||||||
Mfr: TPH6R008QM,LQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 80V UMOS9-H SOP-Advance(N) 6mohm | 0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 60 V, 80 V | 107 A | 6 mOhms | 20 V | 3.5 V | 38 nC | + 175 C | 135 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 20 A | 125 mOhms | 30 V | 4 V | 28 nC | + 150 C | 150 W | Enhancement | Tube | ||||||
0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 40 V | 150 A | 1.3 mOhms | 20 V | 3 V | 85 nC | + 175 C | 170 W | Enhancement | Reel | |||||||
Not Available Online | Si | Reel | |||||||||||||||||||
0In Stock | Si | Through Hole | TO-220SIS-3 | N-Channel | 1 Channel | 150 V | 57 A | 7.4 mOhms | 20 V | 4.5 V | 66 nC | - 55 C | + 175 C | 46 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | SOT-416-3 | P-Channel | 1 Channel | 20 V | 250 mA | 1.4 Ohms | 10 V | 1 V | + 150 C | 500 mW | Depletion | Reel | |||||||
0In Stock | Si | SMD/SMT | SOT-723-3 | N-Channel | 1 Channel | 20 V | 250 mA | 1.1 Ohms | 10 V | 1 V | 620 pC | + 150 C | 500 mW | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | DFN2020B-6 | P-Channel | 1 Channel | 30 V | 4 A | 71 mOhms | - 20 V, 10 V | 2 V | 5.9 nC | + 150 C | 3.5 W | Depletion | Reel | ||||||
0In Stock | Si | SMD/SMT | TSOP-6F | P-Channel | 1 Channel | 20 V | 3.9 A | 93 mOhms | - 8 V, 6 V | 1 V | 4.6 nC | + 150 C | 3.1 W | Depletion | Reel | ||||||
Mfr: TPM1R006PL,LQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-ch MOSFET 40V 0.00067Ohm SOP Advance(N) U-MOS11-H | 0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 60 V | 341 A | 1 mOhms | 20 V | 2.5 V | 106 nC | + 175 C | 250 W | Enhancement | Reel | |||||
Mfr: XPN52016MC,L1XHQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs -60 V 52mOhm P-ch MOSFET AEC-Q TSON Advance(WF) | 0In Stock | Si | SMD/SMT | TSON-8 | P-Channel | 1 Channel | 60 V | 15 A | 52 mOhms | - 20 V, 10 V | 2.1 V | 47 nC | + 175 C | 65 W | Enhancement | AEC-Q101 | Reel | ||||
0In Stock | Si | Through Hole | TO-220SIS-3 | N-Channel | 1 Channel | 600 V | 30 A | 80 mOhms | 30 V | 4 V | 43 nC | + 150 C | 45 W | Enhancement | Tube | ||||||
0In Stock | Si | SMD/SMT | TOLL-9 | N-Channel | 1 Channel | 600 V | 25 A | 99 mOhms | 30 V | 4 V | 36 nC | + 150 C | 176 W | Enhancement | Reel | ||||||
Mfr: SSM6N67NU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=4A VDSS=30V | 0In Stock | Si | SMD/SMT | UDFN-6 | N-Channel | 2 Channel | 30 V | 4 A | 39.1 mOhms | - 8 V, 12 V | 400 mV | 3.2 nC | - 55 C | + 150 C | 1 W | Enhancement | AEC-Q101 | U-MOSVII-H | Reel | ||
Mfr: TK11A65W,S5X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs MOSFET NChannel 0.33ohm DTMOS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 11.1 A | 330 mOhms | 30 V | 3.5 V | 25 nC | - 55 C | + 150 C | 35 W | Enhancement | DTMOSIV | Tube | |||
Mfr: TK14E65W,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs MOSFET NChannel 0.22ohm DTMOS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 13.7 A | 220 mOhms | 30 V | 3.5 V | 35 nC | - 55 C | + 150 C | 130 W | Enhancement | DTMOSIV | Tube | |||
0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 100 V | 190 A | 2.7 mOhms | 20 V | 4.3 V | 52 nC | + 175 C | 210 W | Enhancement | Reel | ||||||
Mfr: SSM6J212FE,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs P-Ch U-MOS VI FET ID -4A -20VDSS 500mW | 0In Stock | Si | SMD/SMT | ES6-6 | P-Channel | 1 Channel | 20 V | 4 A | 94 mOhms | 8 V | 1 V | 14.1 nC | - 55 C | + 150 C | 500 mW | Enhancement | U-MOSVI | Reel | |||
Mfr: SSM3J332R,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs SM Sig P-CH MOS 12V VGSS -6A -30VDSS | 0In Stock | Si | P-Channel | 1 Channel | U-MOSVI | Reel | |||||||||||||||
Mfr: TK3A65D(STA4,Q,M) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch MOS 3A 650V 35W 540pF 2.25 Ohm | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 3 A | 2.25 Ohms | 30 V | 2.4 V | 11 nC | - 55 C | + 150 C | 35 W | Enhancement | MOSVII | Tube | |||
Mfr: TK6P60W,RVQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 9.7A 100W FET 600V 700pF 20nC | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 6.2 A | 820 mOhms | 30 V | 2.7 V | 12 nC | - 55 C | + 150 C | 60 W | Enhancement | DTMOSIV | Reel |