Toshiba - MOSFETs
3.364 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: TJ50S06M3L,LXHQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 90W 1MHz Automotive; AEC-Q101 | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 50 A | 13.8 mOhms | - 20 V, 10 V | 3 V | 124 nC | + 175 C | 90 W | Enhancement | AEC-Q101 | Reel | TJ50S06M3L,LXHQ(O | ||||
Mfr: TK13E25D,S1X(S TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch MOS 13A 250V 102W 1100pF 0.25 | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 250 V | 13 A | 250 mOhms | 102 W | MOSVII | Tube | ||||||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 30 A | 90 mOhms | - 30 V, 30 V | 4 V | 47 nC | - 55 C | + 150 C | 230 W | Enhancement | DTMOSVI | Reel | |||||
0In Stock | Si | Through Hole | TO-220SIS-3 | N-Channel | 1 Channel | 600 V | 20 A | 125 mOhms | 30 V | 4 V | 28 nC | + 150 C | 40 W | Enhancement | Tube | |||||||
Mfr: TK25S06N1L,LXHQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 57W 1MHz Automotive; AEC-Q101 | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 60 V | 25 A | 36.8 mOhms | - 20 V, 20 V | 1.5 V | 15 nC | - 55 C | + 175 C | 57 W | Enhancement | AEC-Q101 | Reel | TK25S06N1L,LXHQ(O | |||
0In Stock | Si | AEC-Q101 | Reel | |||||||||||||||||||
Mfr: TPH2R306PL1,LQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 60V UMOS9-H SOP Advance(N) 2.3mohm | 0In Stock | Reel | ||||||||||||||||||||
0In Stock | Si | SMD/SMT | UDFN-6B | N-Channel | 1 Channel | 100 V | 2 A | 125 mOhms | 20 V | 2.5 V | 3.6 nC | + 150 C | 2 W | Enhancement | Reel | |||||||
0In Stock | Si | SMD/SMT | TOLL-9 | N-Channel | 1 Channel | 650 V | 29 A | 95 mOhms | 30 V | 4.5 V | 50 nC | + 150 C | 230 W | Enhancement | Reel | |||||||
0In Stock | Si | SMD/SMT | TOLL-9 | N-Channel | 1 Channel | 600 V | 17 A | 155 mOhms | 30 V | 4 V | 24 nC | + 150 C | 130 W | Enhancement | Reel | |||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 11.5 A | 300 mOhms | - 30 V, 30 V | 2.7 V | 25 nC | - 55 C | + 150 C | 35 W | Enhancement | DTMOSIV | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 25 A | 70 mOhms | - 20 V, 20 V | 1.5 V | 60 nC | - 55 C | + 150 C | 45 W | Enhancement | MOSVII | Tube | |||||
Mfr: SSM3K7002KF,LXHF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs SMOS Nch I: 0.4A, V: 60V, P: 270mW S-Min | 0In Stock | Si | SMD/SMT | S-Mini-3 | N-Channel | 1 Channel | 60 V | 400 mA | 1.75 Ohms | - 20 V, 20 V | 2.1 V | + 150 C | 900 mW | Enhancement | AEC-Q101 | Reel | ||||||
0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 30 V | 320 A | 610 uOhms | - 20 V, 20 V | 2.1 V | 81 nC | + 175 C | 170 W | Enhancement | Reel | TPHR9203PL1,LQ(M | ||||||
Mfr: SSM3J144TU,LXHF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs SMOS P-ch Vdss:-20V Vgss:-8/+6V Id:-3.2A | 0In Stock | Si | SMD/SMT | UFM-3 | P-Channel | 1 Channel | 20 V | 3.2 A | 93 mOhms | - 8 V, 6 V | 1 V | 4.7 nC | + 150 C | 1 W | Enhancement | AEC-Q101 | Reel | |||||
0In Stock | Si | Through Hole | TO-220SIS-3 | N-Channel | 1 Channel | 600 V | 17 A | 155 mOhms | 30 V | 4 V | 24 nC | + 150 C | 40 W | Enhancement | Tube | |||||||
Mfr: XSM6K361NW,LXHF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-ch MOSFET, 100 V, 3.5 A, 0.069 ohm at 10V, DFN2020B(WF) | 0In Stock | Si | SMD/SMT | DFN-6 | N-Channel | 1 Channel | 100 V | 3.5 A | 69 mOhms | 20 V | 2.5 V | 3.2 nC | + 175 C | 4.3 W | Enhancement | Reel | ||||||
Mfr: TK095A65Z5,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 650 V 0.095 Ohm N-ch MOSFET TO-220SIS DTMOS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 29 A | 95 mOhms | 30 V | 4.5 V | 50 nC | + 150 C | 45 W | Enhancement | Tube | ||||||
Mfr: TK125E60Z1,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 600 V 0.125 Ohm N-ch MOSFET TO-220 DTMOS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 20 A | 125 mOhms | 30 V | 4 V | 28 nC | + 150 C | 150 W | Enhancement | Tube | ||||||
Mfr: SSM14N956L,EFF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 12V Common Drain MOSFET Rss(on): 1.1mOhm | 0In Stock | Si | SMD/SMT | N-Channel | 2 Channel | 1.35 mOhms | - 8 V, 8 V | 76 nC | + 150 C | 1.33 W | Enhancement | Reel | ||||||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 150 V | 84 A | 7.2 mOhms | - 20 V, 20 V | 4.5 V | 66 nC | - 55 C | + 175 C | 230 W | Enhancement | Tube | ||||||
Mfr: 2SK2009TE85LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch Sm Sig FET Id 0.2A 30V 20V | 0In Stock | Si | SMD/SMT | SOT-346-3 | N-Channel | 1 Channel | 30 V | 200 mA | 2 Ohms | - 20 V, 20 V | 1.5 V | - 55 C | + 150 C | 200 mW | Enhancement | Reel | ||||||
Mfr: TPH4R50ANH,L1Q TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs U-MOSVIII-H 100V 93A 58nC MOSFET | 0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 100 V | 93 A | 4.5 mOhms | - 20 V, 20 V | 2 V | 58 nC | - 55 C | + 150 C | 78 W | Enhancement | U-MOSVIII-H | Reel | ||||
Mfr: TK15S04N1L,LQ TTI: Not Assigned Toshiba Availability: Not Available OnlineMOSFETs 40W 1MHz Automotive; AEC-Q101 | Not Available Online | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 40 V | 15 A | 13.7 mOhms | - 20 V, 20 V | 2.5 V | 10 nC | - 55 C | + 175 C | 40 W | Enhancement | AEC-Q101 | U-MOSVIII-H | Reel | |||
Mfr: TPH2010FNH,L1Q TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs UMOSVIII 250V 205m (VGS=10V) SOP-ADV | 0In Stock | Si | SMD/SMT | SOP-Advance-8 | N-Channel | 1 Channel | 250 V | 10 A | 168 mOhms | - 20 V, 20 V | 4 V | 7 nC | - 55 C | + 150 C | 42 W | Enhancement | U-MOSVIII-H | Reel |
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