Toshiba - MOSFETs
3.364 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Mfr: TK31J60W,S1VQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 30.8A 230W FET 600V 3000pF 86nC | 0In Stock | Si | Through Hole | TO-3PN-3 | N-Channel | 1 Channel | 600 V | 30.8 A | 88 mOhms | - 30 V, 30 V | 105 nC | 230 W | DTMOSIV | Tube | ||||||||
Mfr: TK11A50D(STA4,Q,M) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 500V FET Vgss 30V 45W .45 ohm | 0In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 500 V | 11 A | 600 mOhms | 45 W | MOSVII | Tube | ||||||||||
0In Stock | Si | SMD/SMT | UFV-5 | N-Channel | 1 Channel | 30 V | 1.9 A | 133 mOhms | - 12 V, 12 V | 1 V | 1.9 nC | - 55 C | + 125 C | 500 mW | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | UDFN-6 | N-Channel | 1 Channel | 20 V | 2 A | 126 mOhms | - 10 V, 10 V | 1 V | 3.4 nC | - 55 C | + 150 C | 500 mW | Enhancement | U-MOSIII | Reel | |||||
Mfr: TK33S10N1L,LQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 125W 1MHz Automotive; AEC-Q101 | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 100 V | 33 A | 9.7 mOhms | - 20 V, 20 V | 1.5 V | 33 nC | - 55 C | + 175 C | 125 W | Enhancement | AEC-Q101 | U-MOSVIII-H | Reel | |||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 60 V | 40 A | 18 mOhms | - 20 V, 20 V | 1.5 V | 26 nC | - 55 C | + 175 C | 88.2 W | Enhancement | AEC-Q101 | U-MOSVIII-H | Reel | ||||
Mfr: TK17A65W,S5X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TO-220SIS PD=45W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 17.3 A | 200 mOhms | - 30 V, 30 V | 3.5 V | 45 nC | - 55 C | + 150 C | 45 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: TK1K0A60F,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TO-220SIS PD=40W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 7.5 A | 1 Ohms | - 30 V, 30 V | 4 V | 24 nC | - 55 C | + 150 C | 40 W | Enhancement | MOSIX | Tube | ||||
Mfr: TK6R7A10PL,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TO-220SIS PD=42W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 56 A | 10.1 mOhms | - 20 V, 20 V | 2.5 V | 58 nC | - 55 C | + 175 C | 42 W | Enhancement | U-MOSIX-H | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 30 A | 90 mOhms | - 30 V, 30 V | 3 V | 47 nC | - 55 C | + 150 C | 45 W | Enhancement | DTMOSVI | Tube | |||||
0In Stock | Si | SMD/SMT | DSOP-8 | N-Channel | 1 Channel | 75 V | 170 A | 2.5 mOhms | - 20 V, 20 V | 2 V | 72 nC | + 150 C | 142 W | Enhancement | U-MOSVIII-H | Reel | ||||||
Mfr: TPH1500CNH,L1Q TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TSON-ADV 00 PD=78W 1MHz PWR MOSFET TRNS | 0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 150 V | 38 A | 15.4 mOhms | - 20 V, 20 V | 4 V | 22 nC | - 55 C | + 150 C | 78 W | Enhancement | U-MOSVIII-H | Reel | ||||
Mfr: SSM6L61NU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs Small-signal MOSFET 2 in 1 Nch+Pch ID:4A | 0In Stock | Si | SMD/SMT | UDFN-6 | N-Channel, P-Channel | 2 Channel | 20 V | 4 A | 108 mOhms, 157 mOhms | - 12 V, - 8 V, 8 V, 12 V | 400 mV, 500 mV | 3.6 nC, 6.74 nC | - 55 C | + 150 C | 2 W | Enhancement | U-MOSVII-H / U-MOSVI | Reel | ||||
Mfr: TK56E12N1,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 120V 112A 168W UMOSVIII 4200pF 69nC | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 120 V | 112 A | 5.8 mOhms | - 20 V, 20 V | 4 V | 69 nC | - 55 C | + 150 C | 168 W | Enhancement | U-MOSVIII-H | Tube | ||||
Mfr: SSM6N7002CFU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs Small-Signal MOSFET 2-in-1 | 0In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel | 2 Channel | 60 V | 170 mA | 3.9 Ohms, 3.9 Ohms | - 20 V, 20 V | 1.1 V | 270 pC | - 55 C | + 150 C | 285 mW | Enhancement | U-MOSVII-H | Reel | ||||
Mfr: SSM6N55NU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 2N-Ch U-MOS VI FET ID 4A 30VDSS 4.5GD | 0In Stock | Si | N-Channel | 2 Channel | U-MOSVII-H | Reel | ||||||||||||||||
Mfr: TPH3R10AQM,LQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 100V U-MOS X-H SOP-Advance(N) 3.1mohm | 0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 100 V | 120 A | 3.1 mOhms | - 20 V, 20 V | 2.5 V | 83 nC | - 55 C | + 175 C | 210 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | UF-6 | P-Channel | 1 Channel | 30 V | 2 A | 117 mOhms | - 20 V, 20 V | 2.6 V | 5.3 nC | - 55 C | + 150 C | 500 mW | Enhancement | AEC-Q101 | U-MOSII | Reel | ||||
0In Stock | Si | SMD/SMT | UFM-3 | P-Channel | 1 Channel | 20 V | 3 A | 103 mOhms | - 8 V, 8 V | 1 V | 4.6 nC | - 55 C | + 150 C | 500 mW | Enhancement | U-MOSVI | Reel | |||||
0In Stock | Si | SMD/SMT | UFM-3 | N-Channel | 1 Channel | 20 V | 2 A | 123 mOhms | - 10 V, 10 V | 1 V | 3.4 nC | - 55 C | + 150 C | 500 mW | Enhancement | AEC-Q101 | U-MOSIII | Reel | ||||
0In Stock | Si | SMD/SMT | CST3-3 | N-Channel | 1 Channel | 20 V | 180 mA | 1.1 Ohms | - 10 V, 10 V | 1 V | - 55 C | + 150 C | 100 mW | Enhancement | Reel | |||||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 900 V | 2 A | 5.9 Ohms | - 30 V, 30 V | 2.5 V | 12 nC | - 55 C | + 150 C | 80 W | Enhancement | MOSVIII | Reel | |||||
0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 40 V | 240 A | 1.2 mOhms | - 20 V, 20 V | 2 V | 62 nC | - 55 C | + 175 C | 132 W | Enhancement | U-MOSIX-H | Reel | |||||
Mfr: TPH1R104PB,L1XHQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 132W 1MHz Automotive; AEC-Q101 | 0In Stock | Si | SMD/SMT | SOP-Advance-8 | N-Channel | 1 Channel | 40 V | 120 A | 1.14 mOhms | - 20 V, 20 V | 3 V | 55 nC | + 175 C | 132 W | Enhancement | AEC-Q101 | Reel | TPH1R104PB,L1XHQ(O | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 25 A | 120 mOhms | - 30 V, 30 V | 3 V | 60 nC | - 55 C | + 150 C | 180 W | Enhancement | DTMOSIV-H | Tube |
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