Toshiba - MOSFETs
3.381 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | Si | SMD/SMT | SOT-23F | P-Channel | 1 Channel | 12 V | 6 A | 17.6 mOhms | 8 V | 300 mV | + 150 C | 1 W | Enhancement | U-MOSVII | Reel | |||||||
Mfr: TK7S10N1Z,LQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 60W 1MHz Automotive; AEC-Q101 | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 100 V | 7 A | 48 mOhms | 20 V | 2 V | 7.1 nC | - 55 C | + 175 C | 50 W | Enhancement | AEC-Q101 | U-MOSVIII-H | Reel | |||
0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 60 V | 400 mA | 1.5 Ohms | 20 V | 1.1 V | 390 pC | - 55 C | + 150 C | 1 W | Enhancement | U-MOSVII-H | Reel | |||||
Mfr: SSM6N56FE,LM TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs Small-signal MOSFET N-Channel | 0In Stock | Si | SMD/SMT | ES6-6 | N-Channel | 2 Channel | 20 V | 800 mA | 235 mOhms, 235 mOhms | 8 V | 400 mV | 1 nC | - 55 C | + 150 C | 250 mW | Enhancement | U-MOSVII-H | Reel | ||||
Mfr: TK8Q60W,S1VQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs DTMOSIV 600V 500mOhm 8A 80W 570pF 18.5nC | 0In Stock | Si | Through Hole | TO-251-3 | N-Channel | 1 Channel | 600 V | 8 A | 420 mOhms | 30 V | 3.7 V | 18.5 nC | - 55 C | + 150 C | 80 W | DTMOSIV | Tube | |||||
Mfr: SSM3K344R,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=3A VDSS=20V | 0In Stock | Si | SMD/SMT | SOT-23F-3 | N-Channel | 1 Channel | 20 V | 3 A | 51 mOhms | 8 V | 400 mV | 2 nC | - 55 C | + 150 C | 2 W | Enhancement | U-MOSVII-H | Reel | ||||
Mfr: XPH3R908QB,L1XHQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs POWER MOSFET TRANSISTOR SOP Advance(WF) PD=132W F=1MHZ | 0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 80 V | 80 A | 5.7 mOhms | 20 V | 3.5 V | 63 nC | + 175 C | 132 W | Enhancement | AEC-Q101 | Reel | |||||
0In Stock | Si | SMD/SMT | DPAK-2 (TO-252-2) | N-Channel | 1 Channel | 80 V | 84 A | 5.1 mOhms | 20 V | 3.5 V | 56 nC | + 175 C | 104 W | Enhancement | Reel | TK5R1P08QM,RQ(S2 | ||||||
0In Stock | Si | SMD/SMT | TSON-8 | N-Channel | 1 Channel | 40 V | 68 A | 7.5 mOhms | 20 V | 1.4 V | 24 nC | - 55 C | + 175 C | 61 W | Enhancement | U-MOSIX-H | Reel | |||||
0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 38 V | 2 A | 150 mOhms | 20 V | 700 mV | 3 nC | - 55 C | + 150 C | 1 W | Enhancement | AEC-Q101 | U-MOSIV | Reel | ||||
Mfr: TK22A10N1,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs MOSFET NCh12.2ohm 10V 10uA VDS100V | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 22 A | 11.5 mOhms | 20 V | 4 V | 28 nC | - 55 C | + 150 C | 30 W | Enhancement | U-MOSVIII-H | Tube | ||||
0In Stock | Si | SMD/SMT | SOT-23F-3 | N-Channel | 1 Channel | 40 V | 2 A | 185 mOhms | 8 V | 850 mV | + 150 C | 1 W | Enhancement | U-MOSVII-H | Reel | |||||||
Mfr: TPN30008NH,LQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 80V 22A 27W UMOSVIII 710pF 11nC | 0In Stock | Si | N-Channel | 1 Channel | U-MOSVIII-H | Reel | ||||||||||||||||
Mfr: SSM6J422TU,LXHF TTI: Not Assigned Toshiba Availability: Not Available OnlineMOSFETs SMOS P-ch VDSS=-20V, VGSS=+6/-8V, ID=-4. | Not Available Online | Si | SMD/SMT | UF6-6 | P-Channel | 1 Channel | 20 V | 4 A | 42.7 mOhms | - 8 V, 6 V | 1 V | 12.8 nC | + 150 C | 1 W | Enhancement | AEC-Q101 | Reel | |||||
Mfr: TK2R4E08QM,S1X TTI: Not Assigned Toshiba Availability: Not Available OnlineMOSFETs UMOS10 TO-220AB 80V 2.4mohm | Not Available Online | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 80 V | 120 A | 2.44 mOhms | 20 V | 3.5 V | 178 nC | + 175 C | 300 W | Enhancement | Tube | TK2R4E08QM,S1X(S | |||||
Mfr: TK5R1A08QM,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs UMOS10 TO-220SIS 80V 5.1mohm | 0In Stock | Si | Through Hole | TO-220SIS-3 | N-Channel | 1 Channel | 80 V | 70 A | 5.1 mOhms | 20 V | 3.5 V | 54 nC | + 175 C | 45 W | Enhancement | Tube | TK5R1A08QM,S4X(S | |||||
Mfr: XPH4R10ANB,L1XHQ TTI: Not Assigned Toshiba Availability: Not Available OnlineMOSFETs PD=170W F=1MHZ AEC-Q101 | Not Available Online | Si | SMD/SMT | SOP-Advance-8 | N-Channel | 1 Channel | 100 V | 70 A | 4.1 mOhms | 20 V | 3.5 V | 75 nC | - 55 C | + 175 C | 170 W | Enhancement | AEC-Q101 | Reel | ||||
Mfr: SSM6K809R,LXHF TTI: Not Assigned Toshiba Availability: Not Available OnlineMOSFETs AUTO AEC-Q SS MOS N-ch Logic-Level Gate Drive VDSS:60V IC:6.0A PD:1.5W TSOP6F | Not Available Online | Si | SMD/SMT | TSOP6F | N-Channel | 1 Channel | 60 V | 6 A | 36 mOhms | 20 V | 2.5 V | 9.3 nC | + 175 C | 1.5 W | Enhancement | AEC-Q101 | Reel | SSM6K809R,LXHF(B | ||||
0In Stock | Si | 650 V | 24 A | 92 mOhms | 30 V | 4 V | 40 nC | - 55 C | + 150 C | 190 W | Enhancement | Tube | ||||||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 29 A | 95 mOhms | 30 V | 4.5 V | 50 nC | + 150 C | 230 W | Enhancement | Tube | |||||||
Mfr: TK099E60Z1,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 600 V 0.099 Ohm N-ch MOSFET TO-220 DTMOS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 25 A | 99 mOhms | 30 V | 4 V | 36 nC | + 150 C | 176 W | Enhancement | Tube | ||||||
Mfr: SSM3K389R,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-ch MOSFET, 60 V, 2 A, 82 m at 10 V, TSOP6F | 0In Stock | Si | SMD/SMT | SOT-23F-3 | N-Channel | 1 Channel | 60 V | 2 A | 171 mOhms | 20 V | 2.1 V | 1.84 nC | + 150 C | 1.7 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | ES6-6 | N-Channel | 1 Channel | 30 V | 1.9 A | 133 mOhms | 12 V | 1 V | 1.9 nC | - 55 C | + 150 C | 500 mW | Enhancement | U-MOSIII | Reel | |||||
Mfr: SSM3K16CT,L3F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=0.1A VDSS=20V | 0In Stock | Si | SMD/SMT | SOT-883-3 | N-Channel | 1 Channel | 20 V | 100 mA | 3 Ohms | 10 V | 600 mV | - 55 C | + 150 C | 100 mW | Enhancement | MOSVI | Reel | |||||
0In Stock | Si | SMD/SMT | SOT-23F-3 | N-Channel | 1 Channel | 20 V | 4 A | 25 mOhms | 8 V | 400 mV | 3.6 nC | - 55 C | + 150 C | 2 W | Enhancement | U-MOSVI | Reel |