Toshiba - MOSFETs
3.364 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 45 V | 232 A | 1.4 mOhms | - 20 V, 20 V | 1.4 V | 74 nC | + 175 C | 132 W | Enhancement | U-MOSIX-H | Reel | ||||||
0In Stock | Si | SMD/SMT | TSON-8 | N-Channel | 1 Channel | 60 V | 105 A | 4.8 mOhms | - 20 V, 20 V | 1.5 V | 29 nC | - 55 C | + 175 C | 104 W | Enhancement | U-MOSIX-H | Reel | |||||
Mfr: TK3R3E08QM,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs UMOS10 TO-220AB 80V 3.3mohm | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 80 V | 120 A | 3.3 mOhms | - 20 V, 20 V | 3.5 V | 110 nC | + 175 C | 230 W | Enhancement | Tube | TK3R3E08QM,S1X(S | |||||
Mfr: SSM6N7002KFU,LXH TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs SMOS 2 in 1 Dual Nch High ESD protected | 0In Stock | Si | SMD/SMT | US6-6 | N-Channel | 1 Channel | 60 V | 300 mA | 1.5 Ohms | - 20 V, 20 V | 2.1 V | 390 pC | + 150 C | 500 mW | Enhancement | AEC-Q101 | Reel | |||||
0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 60 V | 280 A | 1 mOhms | - 20 V, 20 V | 2.5 V | 91 nC | + 175 C | 210 W | Enhancement | Reel | TPH1R306PL1,LQ(M | ||||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 100 V | 79 A | 7.7 mOhms | - 20 V, 20 V | 1.5 V | 44 nC | - 55 C | + 175 C | 93 W | Enhancement | U-MOSIX-H | Reel | |||||
Mfr: TK20E60W5,S1VX TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TO-220 PD=165W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 20 A | 175 mOhms | - 30 V, 30 V | 4.5 V | 55 nC | - 55 C | + 150 C | 165 W | Enhancement | DTMOSIV | Tube | ||||
0In Stock | Si | SMD/SMT | ES-6 | N-Channel, P-Channel | 2 Channel | 20 V | 800 mA | 235 mOhms, 390 mOhms | - 8 V, 8 V | 1 V | 1 nC, 1.6 nC | - 55 C | + 150 C | 150 mW | Enhancement | Reel | ||||||
Mfr: SSM3K7002KFU,LXH TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs SMOS Low RON Nch Io: 0.4A Vdss: 60V Vgss | 0In Stock | Si | SMD/SMT | USM-3 | N-Channel | 1 Channel | 60 V | 400 mA | 1.75 Ohms | - 20 V, 20 V | 2.1 V | 390 pC | + 150 C | 700 mW | Enhancement | AEC-Q101 | Reel | |||||
Mfr: SSM6J502NU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs SM Sig P-CH MOS ID -6A -20V -8 VGSS | 0In Stock | Si | SMD/SMT | UDFN6B-6 | P-Channel | 1 Channel | 20 V | 6 A | 60.5 mOhms | - 8 V, 8 V | 1 W | U-MOSVI | Reel | |||||||||
Mfr: TK16A60W5,S4VX TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 15.8A 40W FET 600V 1350pF 43nC | 0In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 600 V | 15.8 A | 190 mOhms | - 30 V, 30 V | 4.5 V | 43 nC | - 55 C | + 150 C | 40 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: TPH8R903NL,LQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch DTMOS VII-H 24W 630pF 38A 30V | 0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 30 V | 38 A | 10.2 mOhms | - 20 V, 20 V | 2.3 V | 9.8 nC | - 55 C | + 150 C | 24 W | Enhancement | U-MOSVIII-H | Reel | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 25 A | 105 mOhms | - 30 V, 30 V | 2.5 V | 40 nC | - 55 C | + 150 C | 45 W | Enhancement | DTMOSIV-H | Tube | |||||
Mfr: TK62N60X,S1F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs DTMOSIV-High Speed 600V 40mOhmmax | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 61.8 A | 33 mOhms | - 30 V, 30 V | 3.5 V | 135 nC | - 55 C | + 150 C | 400 W | Enhancement | DTMOSIV-H | Tube | ||||
0In Stock | Si | SMD/SMT | ES6-6 | N-Channel | 2 Channel | 20 V | 180 mA | 20 Ohms, 20 Ohms | - 10 V, 10 V | 400 mV | - 55 C | + 150 C | 150 mW | Enhancement | MOSVI | Reel | ||||||
Mfr: SSM3J112TU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs Small-signal MOSFET ID=-1.1A VDSS=-30V | 0In Stock | Si | SMD/SMT | UFM-3 | P-Channel | 1 Channel | 30 V | 1.1 A | 310 mOhms | - 20 V, 20 V | 1.8 V | + 150 C | 800 mW | Enhancement | AEC-Q101 | Reel | ||||||
Mfr: SSM3K347R,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=2A VDSS=38V | 0In Stock | Si | SMD/SMT | SOT-23F-3 | N-Channel | 1 Channel | 38 V | 2 A | 280 mOhms | - 20 V, 20 V | 1.4 V | 2.5 nC | - 55 C | + 150 C | 1 W | Enhancement | AEC-Q101 | U-MOSIV | Reel | |||
Mfr: SSM6K341NU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=6A VDSS=100V | 0In Stock | Si | SMD/SMT | UDFN-6 | N-Channel | 1 Channel | 60 V | 6 A | 28 mOhms | - 20 V, 20 V | 1.5 V | 9.3 nC | - 55 C | + 150 C | 1.25 W | Enhancement | U-MOSVIII-H | Reel | ||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 250 V | 13 A | 250 mOhms | - 20 V, 20 V | 1.5 V | 25 nC | - 55 C | + 150 C | 96 W | Enhancement | MOSVII | Reel | |||||
Mfr: XPN3R804NC,L1XHQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 100W 1MHz Automotive; AEC-Q101 | 0In Stock | Si | SMD/SMT | TSON-Advance-8 | N-Channel | 1 Channel | 40 V | 40 A | 3.8 mOhms | - 20 V, 20 V | 2.5 V | 35 nC | - 55 C | + 175 C | 100 W | Enhancement | AEC-Q101 | Reel | XPN3R804NC,L1XHQ(O | |||
Mfr: TK28N65W5,S1F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TO-247(OS) PD=230W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 27.6 A | 130 mOhms | - 30 V, 30 V | 4.5 V | 90 nC | - 55 C | + 150 C | 230 W | Enhancement | DTMOSIV | Tube | ||||
0In Stock | Si | SMD/SMT | UFM-3 | P-Channel | 1 Channel | 20 V | 3 A | 103 mOhms | - 8 V, 6 V | 1 V | 4.6 nC | + 150 C | 1 W | Enhancement | AEC-Q101 | U-MOSVI | Reel | |||||
Mfr: TK8A65D(STA4,Q,M) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch FET 650V 4.5s IDSS 10 uA 0.7 Ohm | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 8 A | 840 mOhms | - 30 V, 30 V | 2 V | 25 nC | - 55 C | + 150 C | 45 W | Enhancement | MOSVII | Tube | ||||
Mfr: TPN2010FNH,L1Q TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs UMOSVIII 250V 200m (VGS=10V) TSON-ADV | 0In Stock | Si | SMD/SMT | TSON-8 | N-Channel | 1 Channel | 250 V | 9.9 A | 168 mOhms | - 20 V, 20 V | 4 V | 7 nC | - 55 C | + 150 C | 39 W | Enhancement | U-MOSVIII-H | Reel | ||||
0In Stock | Si | SMD/SMT | SOT-363-6 | P-Channel | 2 Channel | 20 V | 250 mA | 1.4 Ohms | - 10 V, 10 V | 1 V | + 150 C | 285 mW | Enhancement | U-MOSVII | Reel |
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