Toshiba - MOSFETs
3.364 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SSM6P36TU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs Sm-signal/HiSpeed2n1 UF6 (SOT-363F) | 0In Stock | Si | SMD/SMT | UF-6 | P-Channel | 2 Channel | 20 V | 330 mA | 1.31 Ohms | - 8 V, 8 V | 1 V | 1.2 nC | + 150 C | 500 mW | Enhancement | AEC-Q101 | MOSIII | Reel | ||||
Mfr: TK10A50W,S5X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TO-220SIS PD=30W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 9.7 A | 380 mOhms | - 30 V, 30 V | 2.7 V | 20 nC | - 55 C | + 150 C | 30 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: TK70J20D,S1Q TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 200V 70A 410W MOSVII 160nC .0029 | 0In Stock | Si | Through Hole | TO-3PN-3 | N-Channel | 1 Channel | 200 V | 70 A | 27 mOhms | - 20 V, 20 V | 3.5 V | 160 nC | - 55 C | + 150 C | 410 W | Enhancement | MOSVII | |||||
0In Stock | Si | 650 V | 18 A | 130 mOhms | - 30 V, 30 V | 4 V | 29 nC | - 55 C | + 150 C | 150 W | Enhancement | Tube | ||||||||||
Mfr: SSM6J422TU,LXHF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs SMOS P-ch VDSS=-20V, VGSS=+6/-8V, ID=-4. | 0In Stock | Si | SMD/SMT | UF6-6 | P-Channel | 1 Channel | 20 V | 4 A | 42.7 mOhms | - 8 V, 6 V | 1 V | 12.8 nC | + 150 C | 1 W | Enhancement | AEC-Q101 | Reel | |||||
Mfr: TK380A65Y,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TO-220SIS PD=30W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 9.7 A | 380 mOhms | - 30 V, 30 V | 4 V | 20 nC | - 55 C | + 150 C | 30 W | Enhancement | DTMOSV | Tube | ||||
Mfr: TK2R4E08QM,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs UMOS10 TO-220AB 80V 2.4mohm | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 80 V | 120 A | 2.44 mOhms | - 20 V, 20 V | 3.5 V | 178 nC | + 175 C | 300 W | Enhancement | Tube | TK2R4E08QM,S1X(S | |||||
Mfr: TK5R3E08QM,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs UMOS10 TO-220AB 80V 5.3mohm | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 80 V | 120 A | 5.3 mOhms | - 20 V, 20 V | 3.5 V | 55 nC | + 175 C | 150 W | Enhancement | Tube | TK5R3E08QM,S1X(S | |||||
Mfr: TJ80S04M3L,LXHQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 100W 1MHz Automotive; AEC-Q101 | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 40 V | 80 A | 5.2 mOhms | - 20 V, 10 V | 3 V | 158 nC | + 175 C | 100 W | Enhancement | AEC-Q101 | Reel | TJ80S04M3L,LXHQ(O | ||||
Mfr: SSM6K809R,LXHF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs AUTO AEC-Q SS MOS N-ch Logic-Level Gate Drive VDSS:60V IC:6.0A PD:1.5W TSOP6F | 0In Stock | Si | SMD/SMT | TSOP6F | N-Channel | 1 Channel | 60 V | 6 A | 36 mOhms | - 20 V, 20 V | 2.5 V | 9.3 nC | + 175 C | 1.5 W | Enhancement | AEC-Q101 | Reel | SSM6K809R,LXHF(B | ||||
0In Stock | Si | 650 V | 24 A | 92 mOhms | - 30 V, 30 V | 4 V | 40 nC | - 55 C | + 150 C | 190 W | Enhancement | Tube | ||||||||||
Mfr: SSM3K7002KF,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs Small-signal Nch MOSFET ID:0.4A | 0In Stock | Si | SMD/SMT | SOT-346-3 | N-Channel | 1 Channel | 60 V | 400 mA | 1.05 Ohms | - 20 V, 20 V | 1.1 V | 390 pC | - 55 C | + 150 C | 900 mW | Enhancement | AEC-Q101 | U-MOSVII-H | Reel | |||
Mfr: SSM6J213FE(TE85L,F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs P-Ch U-MOS VI FET ID -2.6A -20V 290pF | 0In Stock | Si | SMD/SMT | ES6-6 | P-Channel | 1 Channel | 20 V | 2.6 A | 250 mOhms | - 8 V, 8 V | 1 V | 4.7 nC | - 55 C | + 150 C | 500 mW | Enhancement | U-MOSVI | Reel | ||||
0In Stock | Si | SMD/SMT | TSON-8 | N-Channel | 1 Channel | 40 V | 68 A | 7.5 mOhms | - 20 V, 20 V | 1.4 V | 24 nC | - 55 C | + 175 C | 61 W | Enhancement | U-MOSIX-H | Reel | |||||
Mfr: TK8Q60W,S1VQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs DTMOSIV 600V 500mOhm 8A 80W 570pF 18.5nC | 0In Stock | Si | Through Hole | TO-251-3 | N-Channel | 1 Channel | 600 V | 8 A | 420 mOhms | - 30 V, 30 V | 3.7 V | 18.5 nC | - 55 C | + 150 C | 80 W | DTMOSIV | Tube | |||||
Not Available Online | Si | Reel | ||||||||||||||||||||
Mfr: SSM3K16CT,L3F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=0.1A VDSS=20V | 0In Stock | Si | SMD/SMT | SOT-883-3 | N-Channel | 1 Channel | 20 V | 100 mA | 3 Ohms | - 10 V, 10 V | 600 mV | - 55 C | + 150 C | 100 mW | Enhancement | MOSVI | Reel | |||||
Mfr: TK22E10N1,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch PWR FET 52A 72W 100V VDSS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 52 A | 13.8 mOhms | - 20 V, 20 V | 2 V | 28 nC | - 55 C | + 150 C | 72 W | Enhancement | U-MOSVIII-H | Tube | ||||
Mfr: TK34E10N1,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch PWR FET 75A 103W 100V VDSS | 0In Stock | Si | N-Channel | 1 Channel | U-MOSVIII-H | Tube | ||||||||||||||||
Mfr: SSM6P35FE,LM TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs Small-signal MOSFET P-Channel | 0In Stock | Si | SMD/SMT | ES6-6 | MOSVI | Reel | ||||||||||||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 7.8 A | 530 mOhms | - 30 V, 30 V | 2.5 V | 16 nC | - 55 C | + 150 C | 30 W | Enhancement | DTMOSIV | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 17.3 A | 170 mOhms | - 30 V, 30 V | 2.5 V | 45 nC | - 55 C | + 150 C | 165 W | Enhancement | DTMOSIV | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 35 A | 80 mOhms | - 30 V, 30 V | 3 V | 115 nC | - 55 C | + 150 C | 50 W | Enhancement | DTMOSIV | Tube | |||||
Mfr: TK099E60Z1,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 600 V 0.099 Ohm N-ch MOSFET TO-220 DTMOS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 25 A | 99 mOhms | 30 V | 4 V | 36 nC | + 150 C | 176 W | Enhancement | Tube | ||||||
0In Stock | Si | SMD/SMT | ES6-6 | N-Channel | 1 Channel | 30 V | 1.9 A | 133 mOhms | - 12 V, 12 V | 1 V | 1.9 nC | - 55 C | + 150 C | 500 mW | Enhancement | U-MOSIII | Reel |
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