Toshiba - MOSFETs
3.381 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: XPMR5904PB,LXHQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 40V 0.59mOhm N-ch MOSFET AEC-Q SOP Advance(EWF) | 0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 40 V | 478 A | 0.59 mOhms | 20 V | 3 V | 61 nC | + 175 C | 272 W | Enhancement | AEC-Q101 | Reel | |||||
0In Stock | Si | SMD/SMT | 2-10AG1A | N-Channel | 1 Channel | 100 V | 300 A | 1.03 mOhms | 20 V | 3.5 V | 269 nC | - 55 C | + 175 C | 750 W | Enhancement | Reel | ||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 25 A | 99 mOhms | 30 V | 36 nC | + 150 C | 176 W | Enhancement | Tube | ||||||||
Mfr: TPM7R10CQ5,LQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-ch MOSFET, 150 V, 0.0071 ohma.10V, Qrr=43nCa.100A/ s, SOP Advance(E), U-MOS?-H | 0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 150 V | 120 A | 7.1 mOhms | 20 V | 4.5 V | 57 nC | + 150 C | 250 W | Enhancement | Reel | ||||||
Mfr: TK5R3E08QM,S1X TTI: Not Assigned Toshiba Availability: Not Available OnlineMOSFETs UMOS10 TO-220AB 80V 5.3mohm | Not Available Online | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 80 V | 120 A | 5.3 mOhms | 20 V | 3.5 V | 55 nC | + 175 C | 150 W | Enhancement | Tube | TK5R3E08QM,S1X(S | |||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 4 A | 1.7 Ohms | 30 V | 2.4 V | 12 nC | - 55 C | + 150 C | 100 W | Enhancement | MOSVII | Reel | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 250 V | 7.5 A | 500 mOhms | 20 V | 1.5 V | 16 nC | - 55 C | + 150 C | 30 W | Enhancement | MOSVII | Tube | |||||
Mfr: SSM6K804R,LF TTI: Not Assigned Toshiba Availability: Not Available OnlineMOSFETs Silicon N-channel MOS (U-MOSIX-H) | Not Available Online | Si | Reel | |||||||||||||||||||
0In Stock | Si | SMD/SMT | SOT-723-3 | P-Channel | 1 Channel | 20 V | 250 mA | 1.1 Ohms | 10 V | 1 V | - 55 C | + 150 C | 500 mW | Enhancement | U-MOSVII | Reel | ||||||
Mfr: SSM6J213FE(TE85L,F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs P-Ch U-MOS VI FET ID -2.6A -20V 290pF | 0In Stock | Si | SMD/SMT | ES6-6 | P-Channel | 1 Channel | 20 V | 2.6 A | 250 mOhms | 8 V | 1 V | 4.7 nC | - 55 C | + 150 C | 500 mW | Enhancement | U-MOSVI | Reel | ||||
Mfr: TK10E60W,S1VX TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 9.7A 100W FET 600V 700pF 20nC | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 9.7 A | 380 mOhms | 30 V | 3.7 V | 20 nC | - 55 C | + 150 C | 100 W | Enhancement | DTMOSIV | Tube | ||||
0In Stock | Si | SMD/SMT | DFN2020B-6 | N-Channel | 1 Channel | 30 V | 10 A | 56 mOhms | - 8 V, 12 V | 1 V | 2.2 nC | + 150 C | 3.3 W | Enhancement | Reel | |||||||
0In Stock | Si | 650 V | 18 A | 130 mOhms | 30 V | 4 V | 29 nC | - 55 C | + 150 C | 150 W | Enhancement | Tube | ||||||||||
0In Stock | Si | SMD/SMT | UFM-3 | P-Channel | 1 Channel | 30 V | 2 A | 160 mOhms | 20 V | - 55 C | + 150 C | 800 mW | Enhancement | Reel | ||||||||
0In Stock | Si | SMD/SMT | N-Channel | 1 Channel | 40 V | 200 A | 530 uOhms | 20 V | 3 V | 128 nC | + 175 C | 375 W | Enhancement | Reel | ||||||||
Mfr: TK100L60W,VQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs DTMOSIV 600V 18mOhm 100A 800W 15000pF | 0In Stock | Si | Through Hole | TO-3PL-3 | N-Channel | 1 Channel | 600 V | 100 A | 15 mOhms | 30 V | 3.7 V | 360 nC | - 55 C | + 150 C | 797 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: SSM5N15FE(TE85L,F) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch Sm Sig FET 0.1A 30V 2-in-1 | 0In Stock | Si | SMD/SMT | SOT-553-5 | N-Channel | 2 Channel | 30 V | 100 mA | 4 Ohms | 20 V | 1.5 V | - 55 C | + 150 C | 150 mW | Enhancement | MOSVI | Reel | |||||
Mfr: SSM6J503NU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs SM Sig P-CH MOS ID -6A -20V -8 VGSS | 0In Stock | Si | SMD/SMT | UDFN-6 | P-Channel | 1 Channel | 20 V | 6 A | 89.6 mOhms | 8 V | 1 V | 12.8 nC | - 55 C | + 150 C | 1 W | Enhancement | U-MOSVI | Reel | ||||
Mfr: TK46E08N1,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 80V N-Ch PWR FET 80A 103W 37nC | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 80 V | 80 A | 8.4 mOhms | 20 V | 37 nC | 103 W | U-MOSVIII-H | Tube | ||||||||
Mfr: TK65E10N1,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 100V N-Ch PWR FET 148A 192W 5400pF | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 148 A | 4 mOhms | 20 V | 2 V | 81 nC | - 55 C | + 150 C | 192 W | Enhancement | U-MOSVIII-H | Tube | ||||
Not Available Online | Si | N-Channel | 1 Channel | U-MOSVIII-H | Reel | |||||||||||||||||
Mfr: SSM3J334R,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs P-Ch U-MOSVI FET ID -4A -30VDSS 280pF | 0In Stock | Si | P-Channel | 1 Channel | U-MOSVI | Reel | ||||||||||||||||
Mfr: TK12E60W,S1VX TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 11.5A 110W FET 600V 890pF 25nC | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 11.5 A | 300 mOhms | 30 V | 3.7 V | 25 nC | - 55 C | + 150 C | 110 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: TPW4R008NH,L1Q TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-CH Mosfet 80V 116A 8DSOP | 0In Stock | Si | SMD/SMT | DSOP-8 | N-Channel | 1 Channel | 80 V | 116 A | 3.3 mOhms | 20 V | 2 V | 59 nC | - 55 C | + 150 C | 142 W | Enhancement | U-MOSVIII-H | Reel | ||||
Mfr: TK11A45D(STA4,Q,M) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch MOS 10A 40V 25W 410pF 0.029 | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 450 V | 11 A | 500 mOhms | 30 V | 2 V | 20 nC | - 55 C | + 150 C | 40 W | Enhancement | MOSVII | Tube |