Toshiba - MOSFETs
3.364 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 800 V | 3 A | 4.9 Ohms | - 30 V, 30 V | 2.5 V | 12 nC | - 55 C | + 150 C | 80 W | Enhancement | MOSVIII | Reel | |||||
Mfr: XPN7R104NC,L1XHQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 65W 1MHz Automotive; AEC-Q101 | 0In Stock | Si | SMD/SMT | TSON-Advance-8 | N-Channel | 1 Channel | 40 V | 20 A | 7.1 mOhms | - 20 V, 20 V | 2.5 V | 21 nC | + 175 C | 65 W | Enhancement | AEC-Q101 | Reel | XPN7R104NC,L1XHQ(O | ||||
0In Stock | Si | SMD/SMT | TSOP-6F | N-Channel, P-Channel | 2 Channel | 20 V, 30 V | 4 A | 39.1 mOhms, 45 mOhms | - 12 V, - 8 V, 6 V, 12 V | 1 V, 1.2 V | 3.2 nC, 6.7 nC | + 150 C | 1.8 W | Enhancement | AEC-Q101 | Reel | ||||||
0In Stock | Si | Through Hole | TO-247-4 | N-Channel | 1 Channel | 650 V | 57 A | 40 mOhms | - 30 V, 30 V | 4 V | 105 nC | - 55 C | + 150 C | 360 W | Enhancement | DTMOSVI | Reel | |||||
0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 30 V | 90 A | 4.8 mOhms | - 20 V, 20 V | 1.1 V | 22 nC | - 55 C | + 175 C | 69 W | Enhancement | U-MOSIX-H | Reel | |||||
0In Stock | Si | SMD/SMT | DSOP-8 | N-Channel | 1 Channel | 100 V | 150 A | 3.7 mOhms | - 20 V, 20 V | 1.5 V | 67 nC | - 55 C | + 175 C | 170 W | Enhancement | U-MOSIX-H | Reel | |||||
Mfr: TK11A65W,S5X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs MOSFET NChannel 0.33ohm DTMOS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 11.1 A | 330 mOhms | - 30 V, 30 V | 3.5 V | 25 nC | - 55 C | + 150 C | 35 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: TK14E65W,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs MOSFET NChannel 0.22ohm DTMOS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 13.7 A | 220 mOhms | - 30 V, 30 V | 3.5 V | 35 nC | - 55 C | + 150 C | 130 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: TK6P60W,RVQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 9.7A 100W FET 600V 700pF 20nC | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 6.2 A | 820 mOhms | - 30 V, 30 V | 2.7 V | 12 nC | - 55 C | + 150 C | 60 W | Enhancement | DTMOSIV | Reel | ||||
0In Stock | Si | SMD/SMT | SOT-23F-3 | P-Channel | 1 Channel | 30 V | 4 A | 71 mOhms | - 20 V, 10 V | 2 V | 5.9 nC | - 55 C | + 150 C | 2 W | Enhancement | AEC-Q101 | U-MOSVI | Reel | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 27.6 A | 94 mOhms | - 30 V, 30 V | 2.5 V | 75 nC | - 55 C | + 150 C | 45 W | Enhancement | DTMOSIV | Tube | |||||
Mfr: SSM3J332R,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs SM Sig P-CH MOS 12V VGSS -6A -30VDSS | 0In Stock | Si | P-Channel | 1 Channel | U-MOSVI | Reel | ||||||||||||||||
Mfr: SSM6N67NU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=4A VDSS=30V | 0In Stock | Si | SMD/SMT | UDFN-6 | N-Channel | 2 Channel | 30 V | 4 A | 39.1 mOhms | - 8 V, 12 V | 400 mV | 3.2 nC | - 55 C | + 150 C | 1 W | Enhancement | AEC-Q101 | U-MOSVII-H | Reel | |||
Mfr: SSM3J35AFS,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=-.25A VDSS=-20V | 0In Stock | Si | SMD/SMT | SOT-416-3 | P-Channel | 1 Channel | 20 V | 250 mA | 1.1 Ohms | - 10 V, 10 V | 1 V | - 55 C | + 150 C | 500 mW | Enhancement | U-MOSVII | Reel | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 150 V | 120 A | 4.9 mOhms | - 20 V, 20 V | 4.5 V | 96 nC | - 55 C | + 175 C | 300 W | Enhancement | Tube | ||||||
Mfr: TPM1R006PL,LQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-ch MOSFET 40V 0.00067Ohm SOP Advance(N) U-MOS11-H | 0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 60 V | 341 A | 1 mOhms | 20 V | 2.5 V | 106 nC | + 175 C | 250 W | Enhancement | Reel | ||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 27.6 A | 110 mOhms | - 30 V, 30 V | 2.5 V | 75 nC | - 55 C | + 150 C | 230 W | Enhancement | DTMOSIV | Tube | |||||
0In Stock | Si | Through Hole | TO-220SIS-3 | N-Channel | 1 Channel | 150 V | 57 A | 7.4 mOhms | - 20 V, 20 V | 4.5 V | 66 nC | - 55 C | + 175 C | 46 W | Enhancement | Tube | ||||||
Mfr: SSM6J212FE,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs P-Ch U-MOS VI FET ID -4A -20VDSS 500mW | 0In Stock | Si | SMD/SMT | ES6-6 | P-Channel | 1 Channel | 20 V | 4 A | 94 mOhms | - 8 V, 8 V | 1 V | 14.1 nC | - 55 C | + 150 C | 500 mW | Enhancement | U-MOSVI | Reel | ||||
Mfr: XPN6R706NC,L1XHQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 100W 1MHz Automotive; AEC-Q101 | 0In Stock | Si | SMD/SMT | TSON-Advance-8 | N-Channel | 1 Channel | 60 V | 40 A | 6.7 mOhms | - 20 V, 20 V | 2.5 V | 35 nC | + 175 C | 100 W | Enhancement | AEC-Q101 | Reel | XPN6R706NC,L1XHQ(O | ||||
Mfr: SSM3K36MFV,L3F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs Small-signal FET 0.5A 20V 46pF 1.52 | 0In Stock | Si | SMD/SMT | SOT-723-3 | N-Channel | 1 Channel | 20 V | 500 mA | 630 mOhms | - 5 V, 5 V | 350 mV | 1.23 nC | + 150 C | 150 mW | Enhancement | AEC-Q101 | U-MOSIII | Reel | ||||
0In Stock | Si | SMD/SMT | CST3-3 | P-Channel | 1 Channel | 20 V | 250 mA | 20 Ohms | - 10 V, 10 V | 1 V | - 55 C | + 150 C | 100 mW | Enhancement | U-MOSVII | Reel | ||||||
Mfr: TK100E06N1,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 60V N-Ch PWR FET 1.9mOhm 10V 10uA | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 263 A | 1.9 mOhms | - 20 V, 20 V | 2 V | 140 nC | - 55 C | + 150 C | 255 W | Enhancement | U-MOSVIII-H | Tube | ||||
0In Stock | Si | Reel | ||||||||||||||||||||
Mfr: TK3R1E04PL,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 40V 4670pF 63.4nC 128A 87W | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 40 V | 128 A | 2.5 mOhms | - 20 V, 20 V | 1.4 V | 63.4 nC | - 55 C | + 175 C | 87 W | Enhancement | U-MOSIX-H | Tube |
Added To Cart
- Mfr:{{cartPopObject.addedToCartObject.mfrPartNumber}}
- TTI:{{cartPopObject.addedToCartObject.ttiPartNumber}}
- {{cartPopObject.addedToCartObject.manufacturer}}
- Ext. Price:{{cartPopObject.addedToCartObject.extendedPrice}}
- {{cartPopObject.addedToCartObject.quantity}} @{{cartPopObject.addedToCartObject.price}}
- {{cartPopObject.addedToCartObject.numberOfReels}} reels of {{cartPopObject.addedToCartObject.partsPerReel}} @{{cartPopObject.addedToCartObject.price}}
- + $7.00 Per Reel