Toshiba - MOSFETs
3.381 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel | 2 Channel | 20 V | 500 mA | 460 mOhms, 460 mOhms | 20 V | 350 mV | 1.23 nC | - 55 C | + 150 C | 200 mW | Enhancement | AEC-Q101 | MOSVI | Reel | ||||
Mfr: TK62J60W,S1VQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 61.8A 400W FET 600V 3500pF 180nC | 0In Stock | Si | Through Hole | TO-3PN-3 | N-Channel | 1 Channel | 600 V | 61.8 A | 33 mOhms | 30 V | 3.7 V | 180 nC | - 55 C | + 150 C | 30 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: SSM3J325F,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs P-Ch Small Signal 270pF -2A -20V 4.6nC | 0In Stock | Si | SMD/SMT | SOT-346-3 | P-Channel | 1 Channel | 20 V | 2 A | 311 mOhms | 8 V | 1 V | 4.6 nC | - 55 C | + 150 C | 600 mW | Enhancement | U-MOSVI | Reel | ||||
Mfr: TK39N60W,S1VF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs DTMOSIV 600V 65mOhm 38.8A 270W 4100pF | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 38.8 A | 55 mOhms | 30 V | 3.7 V | 110 nC | - 55 C | + 150 C | 270 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: TPN1600ANH,L1Q TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch DTMOS VII-H 42W 1230pF 36A 100V | 0In Stock | Si | SMD/SMT | TSON-8 | N-Channel | 1 Channel | 100 V | 36 A | 13 mOhms | 20 V | 4 V | 19 nC | - 55 C | + 150 C | 42 W | Enhancement | U-MOSVIII-H | Reel | ||||
Mfr: SSM6L35FU(TE85L,F) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch Sm Sig FET 0.1A -0.1A 20V 2-in1 | 0In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel, P-Channel | 2 Channel | 20 V | 100 mA, 180 mA | 11 Ohms | 10 V | 1 V | - 55 C | + 150 C | 200 mW | Enhancement | AEC-Q101 | MOSVI | Reel | ||||
Mfr: SSM6N16FUTE85LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch Sm Sig FET 0.1A -0.1A 20V 2-in1 | 0In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel | 2 Channel | 20 V | 100 mA | 5.2 Ohms | 10 V | 1.1 V | - 55 C | + 150 C | 200 mW | Enhancement | Reel | ||||||
Mfr: SSM5N15FU(TE85L,F) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch Sm Sig FET 0.1A 30V 2-in-1 | 0In Stock | Si | SMD/SMT | SOT-353-5 | N-Channel | 2 Channel | 30 V | 100 mA | 4 Ohms | 1.5 V | 200 mW | Reel | ||||||||||
Mfr: SSM6J771G,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs P-Ch SSM -5A -20V 12V VGSS 0.035Ohm | 0In Stock | Si | SMD/SMT | WCSP6C-6 | P-Channel | 2 Channel | 20 V | 5 A | 26 mOhms | 12 V | 1.2 V | 9.8 nC | - 55 C | + 150 C | 5 W | Enhancement | U-MOSVI | Reel | ||||
0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 60 V | 200 mA | 3.9 Ohms | 20 V | 1.1 V | 270 pC | - 55 C | + 150 C | 1 W | Enhancement | U-MOSVII-H | Reel | |||||
0In Stock | Si | SMD/SMT | SOT-23F-3 | N-Channel | 1 Channel | 60 V | 2 A | 300 mOhms | 20 V | 800 mV | 6 nC | - 55 C | + 150 C | 2 W | Enhancement | AEC-Q101 | MOSV | Reel | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 7.8 A | 530 mOhms | 30 V | 2.5 V | 16 nC | - 55 C | + 150 C | 30 W | Enhancement | DTMOSIV | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 35 A | 80 mOhms | 30 V | 3 V | 115 nC | - 55 C | + 150 C | 50 W | Enhancement | DTMOSIV | Tube | |||||
Mfr: TPN2R703NL,L1Q TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs X35PBF Power MOSFET Trans VGS4.5VVDS30V | 0In Stock | Si | SMD/SMT | TSON-8 | N-Channel | 1 Channel | 30 V | 45 A | 3.3 mOhms | 20 V | 2.3 V | 21 nC | - 55 C | + 150 C | 42 W | Enhancement | U-MOSVIII-H | Reel | ||||
Mfr: TPN2R203NC,L1Q TTI: Not Assigned Toshiba Availability: Not Available OnlineMOSFETs X35PBF Power MOSFET Trans VGS10V VDS30V | Not Available Online | Si | SMD/SMT | TSON-Advance-8 | N-Channel | 1 Channel | 30 V | 45 A | 1.8 mOhms | 20 V | 2.3 V | 34 nC | - 55 C | + 150 C | 42 W | Enhancement | U-MOSVIII | Reel | ||||
Mfr: TK100A08N1,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs MOSFET NCh 2.6ohm VGS10V10uAVDS80V | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 80 V | 100 A | 2.6 mOhms | 20 V | 4 V | 130 nC | - 55 C | + 150 C | 45 W | Enhancement | U-MOSVIII-H | Tube | ||||
Mfr: TK10A80E,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs PLN MOS 800V 1000m (VGS=10V) TO-220SIS | 0In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 800 V | 10 A | 700 mOhms | 30 V | 4 V | 46 nC | - 55 C | + 150 C | 50 W | Enhancement | MOSVIII | Tube | ||||
Mfr: TK10J80E,S1E TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs PLN MOS 800V 1000m (VGS=10V) TO-3PN | 0In Stock | Si | Through Hole | TO-3PN-3 | N-Channel | 1 Channel | 800 V | 10 A | 700 mOhms | 30 V | 4 V | 46 nC | - 55 C | + 150 C | 250 W | Enhancement | MOSVIII | Tray | ||||
Mfr: TK65S04N1L,LQ TTI: Not Assigned Toshiba Availability: Not Available OnlineMOSFETs UMOSVIII 40V 4.3m max(VGS=10V) DPAK | Not Available Online | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 40 V | 65 A | 3.3 mOhms | 20 V | 2.5 V | 39 nC | - 55 C | + 175 C | 68 W | Enhancement | AEC-Q101 | U-MOSVIII-H | Reel | |||
Mfr: TPH11006NL,LQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs U-MOSVIII-H 60V 40A 23nC MOSFET | 0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 60 V | 40 A | 17 mOhms | 20 V | 2.5 V | 23 nC | - 55 C | + 150 C | 34 W | Enhancement | U-MOSVIII-H | Reel | TPH11006NL,LQ(S | |||
Mfr: TPN13008NH,L1Q TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs U-MOSVIII-H 80V 40A 18nC MOSFET | 0In Stock | Si | SMD/SMT | TSON-8 | N-Channel | 1 Channel | 80 V | 40 A | 13.3 mOhms | 20 V | 4 V | 18 nC | - 55 C | + 150 C | 42 W | Enhancement | U-MOSVIII-H | Reel | ||||
0In Stock | Si | SMD/SMT | ES6-6 | N-Channel, P-Channel | 2 Channel | 20 V | 100 mA, 180 mA | 20 Ohms, 44 Ohms | 10 V | 400 mV | - 55 C | + 150 C | 150 mW | Enhancement | AEC-Q101 | MOSVI | Reel | |||||
0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 38 V | 2 A | 150 mOhms | 20 V | 700 mV | 3 nC | - 55 C | + 150 C | 1 W | Enhancement | AEC-Q101 | U-MOSIV | Reel | ||||
Mfr: TK22A10N1,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs MOSFET NCh12.2ohm 10V 10uA VDS100V | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 22 A | 11.5 mOhms | 20 V | 4 V | 28 nC | - 55 C | + 150 C | 30 W | Enhancement | U-MOSVIII-H | Tube | ||||
0In Stock | Si | SMD/SMT | SOT-23F-3 | N-Channel | 1 Channel | 40 V | 2 A | 185 mOhms | 8 V | 850 mV | + 150 C | 1 W | Enhancement | U-MOSVII-H | Reel |