Toshiba - MOSFETs
3.364 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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0In Stock | Si | SMD/SMT | S-Mini-3 | P-Channel | 1 Channel | 20 V | 2 A | 150 mOhms | - 8 V, 6 V | 1 V | 4.6 nC | - 55 C | + 150 C | 1.2 W | Enhancement | AEC-Q101 | U-MOSVI | Reel | |||
0In Stock | Si | SMD/SMT | TSON-8 | N-Channel | 1 Channel | 30 V | 122 A | 2.9 mOhms | - 20 V, 20 V | 1.1 V | 26 nC | - 55 C | + 175 C | 75 W | Enhancement | U-MOSIX-H | Reel | ||||
Mfr: TPH2R306NH,L1Q TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs U-MOSVIII-H 60V 130A 72nC MOSFET | 0In Stock | Si | N-Channel | 1 Channel | U-MOSVIII-H | Reel | |||||||||||||||
0In Stock | Si | SMD/SMT | CST3-3 | P-Channel | 1 Channel | 20 V | 1.4 A | 4 Ohms | - 8 V, 8 V | 1 V | 1.6 nC | - 55 C | + 150 C | 500 mW | Enhancement | U-MOSVI | Reel | ||||
0In Stock | Si | Through Hole | D2PAK-3 | N-Channel | 1 Channel | 650 V | 13.7 A | 220 mOhms | - 30 V, 30 V | 2.5 V | 35 nC | - 55 C | + 150 C | 130 W | Enhancement | DTMOSIV | Reel | ||||
Mfr: SSM6J501NU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs PWR MGT 1.5V Drive P-Ch MOS -20V | 0In Stock | Si | SMD/SMT | UDFN-6 | P-Channel | 1 Channel | 20 V | 10 A | 15.3 mOhms | - 8 V, 8 V | 300 mV | 29.9 nC | - 55 C | + 150 C | 2 W | Enhancement | U-MOSVI | Reel | |||
Mfr: SSM3K15AFS,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs SM Sig N-CH MOS 30V 0.1A 20V VGSS | 0In Stock | Si | N-Channel | 1 Channel | U-MOSIII | Reel | |||||||||||||||
Mfr: SSM6J503NU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs SM Sig P-CH MOS ID -6A -20V -8 VGSS | 0In Stock | Si | SMD/SMT | UDFN-6 | P-Channel | 1 Channel | 20 V | 6 A | 89.6 mOhms | - 8 V, 8 V | 1 V | 12.8 nC | - 55 C | + 150 C | 1 W | Enhancement | U-MOSVI | Reel | |||
Mfr: TK12A50D(STA4,Q,M) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch MOS 12A 500V 45W 1350pF 0.52 | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 12 A | 520 mOhms | - 30 V, 30 V | 2 V | 25 nC | - 55 C | + 150 C | 45 W | Enhancement | DTMOSIV | Tube | |||
Mfr: TK7J90E,S1E TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs PLN MOS 900V 2000m (VGS=10V) TO-3PN | 0In Stock | Si | Through Hole | TO-3PN-3 | N-Channel | 1 Channel | 900 V | 7 A | 1.6 Ohms | - 30 V, 30 V | 4 V | 32 nC | - 55 C | + 150 C | 200 W | Enhancement | MOSVIII | Tray | |||
0In Stock | Si | N-Channel | 1 Channel | U-MOSVIII-H | Reel | ||||||||||||||||
Mfr: TPH4R008NH,L1Q TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs U-MOSVIII-H 80V 100A 59nC MOSFET | 0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 80 V | 100 A | 3.3 mOhms | - 20 V, 20 V | 4 V | 59 nC | - 55 C | + 150 C | 78 W | Enhancement | U-MOSVIII-H | Reel | |||
Mfr: TK20N60W,S1VF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch DTMOSIV 600 V 165W 1680pF 20A | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 20 A | 130 mOhms | - 30 V, 30 V | 3.7 V | 48 nC | - 55 C | + 150 C | 165 W | Enhancement | DTMOSIV | Tube | |||
Mfr: TPW4R008NH,L1Q TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-CH Mosfet 80V 116A 8DSOP | 0In Stock | Si | SMD/SMT | DSOP-8 | N-Channel | 1 Channel | 80 V | 116 A | 3.3 mOhms | - 20 V, 20 V | 2 V | 59 nC | - 55 C | + 150 C | 142 W | Enhancement | U-MOSVIII-H | Reel | |||
Mfr: SSM6H19NU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs UDFN6 S-MOS TRSTR Pd: 0.5W F: 1MHz | 0In Stock | Si | SMD/SMT | UDFN-6 | N-Channel, SBD | 1 Channel | 40 V | 2 A | 160 mOhms | - 12 V, 12 V | 500 mV | 2.2 nC | - 55 C | + 150 C | 1 W | Enhancement | Reel | ||||
Mfr: TK20A60W,S5VX TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch DTMOSIV 600 V 165W 1680pF 20A | 0In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 600 V | 20 A | 130 mOhms | - 30 V, 30 V | 3.7 V | 48 nC | - 55 C | + 150 C | 45 W | Enhancement | DTMOSIV | Tube | |||
Mfr: TPH11003NL,LQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch DTMOS VII-H 21W 510pF 32A 30V | 0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 30 V | 32 A | 12.6 mOhms | - 20 V, 20 V | 2.3 V | 7.5 nC | - 55 C | + 150 C | 21 W | Enhancement | U-MOSVIII-H | Reel | |||
0In Stock | Si | SMD/SMT | N-Channel | 1 Channel | 80 V | 120 A | 2.43 mOhms | - 20 V, 20 V | 3.5 V | 87 nC | + 175 C | 210 W | Enhancement | Reel | |||||||
0In Stock | Si | SMD/SMT | DFN8x8-5 | N-Channel | 1 Channel | 600 V | 20 A | 156 mOhms | - 30 V, 30 V | 3 V | 55 nC | - 55 C | + 150 C | 156 W | Enhancement | DTMOSIV | Reel | ||||
Mfr: TK4R1A10PL,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TO-220SIS PD=54W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 80 A | 5.9 mOhms | - 20 V, 20 V | 2.5 V | 104 nC | - 55 C | + 175 C | 54 W | Enhancement | U-MOSIX-H | Tube | |||
Not Available Online | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 6.5 A | 950 mOhms | - 20 V, 20 V | 3 V | 13 nC | - 55 C | + 150 C | 35 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: SSM6P49NU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs SM Sig MOS 2 in 1 P-Ch -4A -20V 12V GS | 0In Stock | Si | SMD/SMT | UDFN-6 | P-Channel | 2 Channel | 20 V | 4 A | 157 mOhms | - 12 V, 12 V | 1.2 V | - 55 C | + 150 C | 1 W | Enhancement | U-MOSVI | Reel | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 24 A | 115 mOhms | 30 V | 4.5 V | 42 nC | + 150 C | 190 W | Enhancement | Tube | ||||||
Mfr: TK3R9E10PL,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TO-220 PD=230W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 100 A | 5.8 mOhms | - 20 V, 20 V | 2.5 V | 96 nC | - 55 C | + 175 C | 230 W | Enhancement | U-MOSIX-H | Tube | |||
Mfr: TK4K1A60F,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TO-220SIS PD=30W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 2 A | 4.1 Ohms | - 30 V, 30 V | 4 V | 8 nC | - 55 C | + 150 C | 30 W | Enhancement | MOSIX | Tube |
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