Toshiba - MOSFETs
3.381 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: TK190A65Z,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs MOSFET 650V 190mOhms DTMOS-VI | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 15 A | 190 mOhms | 30 V | 4 V | 25 nC | - 55 C | + 150 C | 40 W | Enhancement | Tube | |||||
Mfr: TK200F04N1L,LXGQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 375W 1MHz Automotive; AEC-Q101 | 0In Stock | Si | SMD/SMT | TO-220SM-3 | N-Channel | 1 Channel | 40 V | 200 A | 900 uOhms | 20 V | 3 V | 214 nC | + 175 C | 375 W | Enhancement | AEC-Q101 | Reel | TK200F04N1L,LXGQ(O | ||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 900 V | 2 A | 5.9 Ohms | 30 V | 2.5 V | 12 nC | - 55 C | + 150 C | 80 W | Enhancement | MOSVIII | Reel | |||||
0In Stock | Si | SMD/SMT | P-Channel | 1 Channel | 20 V | 4 A | 42.7 mOhms | 8 V | 1 V | 12.8 nC | - 55 C | + 150 C | 1 W | Enhancement | Reel | |||||||
Mfr: XSM6K336NW,LXHF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-ch MOSFET, 30 V, 3.0 A, 0.095 ohm at 10V, DFN2020B(WF) | 0In Stock | Si | SMD/SMT | DFN-6 | N-Channel | 1 Channel | 30 V | 3 A | 95 mOhms | 20 V | 2.5 V | 1.7 nC | + 150 C | 3.3 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | TOLL-9 | N-Channel | 1 Channel | 600 V | 20 A | 125 mOhms | 30 V | 4 V | 28 nC | + 150 C | 150 W | Enhancement | Reel | |||||||
Mfr: SSM3K361R,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs U-MOSVIII-H 100V 3.5A 3.2nC MOSFET | 0In Stock | Si | SMD/SMT | SOT-23F-3 | N-Channel | 1 Channel | 100 V | 3.5 A | 69 mOhms | 20 V | 1.5 V | 3.2 nC | + 175 C | 1.2 W | Enhancement | AEC-Q101 | U-MOSVIII-H | Reel | ||||
Mfr: SSM6L61NU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs Small-signal MOSFET 2 in 1 Nch+Pch ID:4A | 0In Stock | Si | SMD/SMT | UDFN-6 | N-Channel, P-Channel | 2 Channel | 20 V | 4 A | 108 mOhms, 157 mOhms | 8 V, 12 V | 400 mV, 500 mV | 3.6 nC, 6.74 nC | - 55 C | + 150 C | 2 W | Enhancement | U-MOSVII-H / U-MOSVI | Reel | ||||
Mfr: SSM3K341R,LF TTI: Not Assigned Toshiba Availability: Not Available OnlineMOSFETs U-MOSVIII-H 60V 6A 9.3nC MOSFET | Not Available Online | Si | SMD/SMT | SOT-23F-3 | N-Channel | 1 Channel | 60 V | 6 A | 36 mOhms | 20 V | 1.5 V | + 175 C | 1.2 W | Enhancement | AEC-Q101 | U-MOSVIII-H | Reel | |||||
Mfr: SSM3J15FU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs Small-signal MOSFET High Speed Switching | 0In Stock | Si | SMD/SMT | SOT-323-3 | P-Channel | 1 Channel | 30 V | 100 mA | 12 Ohms | 20 V | 1.1 V | - 55 C | + 150 C | 150 mW | Enhancement | AEC-Q101 | MOSVI | Reel | ||||
Mfr: TPN4R712MD,L1Q TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs P-Channel Mosfet 20V UMOS-VI | 0In Stock | Si | SMD/SMT | TSON-8 | P-Channel | 1 Channel | 20 V | 36 A | 4.7 mOhms | 12 V | 500 mV | 65 nC | - 55 C | + 150 C | 42 W | Enhancement | U-MOSVI | Reel | ||||
Mfr: SSM6N7002CFU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs Small-Signal MOSFET 2-in-1 | 0In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel | 2 Channel | 60 V | 170 mA | 3.9 Ohms, 3.9 Ohms | 20 V | 1.1 V | 270 pC | - 55 C | + 150 C | 285 mW | Enhancement | U-MOSVII-H | Reel | ||||
0In Stock | Si | SMD/SMT | UFM-3 | P-Channel | 1 Channel | 30 V | 2 A | 225 mOhms | 20 V | 1.2 V | - 55 C | + 150 C | 800 mW | Enhancement | AEC-Q101 | Reel | ||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 25 A | 120 mOhms | 30 V | 3 V | 60 nC | - 55 C | + 150 C | 180 W | Enhancement | DTMOSIV-H | Tube | |||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 650 V | 11.1 A | 350 mOhms | 30 V | 2.5 V | 25 nC | - 55 C | + 150 C | 100 W | Enhancement | DTMOSIV | Reel | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 13.7 A | 250 mOhms | 30 V | 3 V | 40 nC | - 55 C | + 150 C | 130 W | Enhancement | DTMOSIV | Tube | |||||
Mfr: SSM6K406TU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=4.4A VDSS=30V | 0In Stock | Si | SMD/SMT | UF-6 | N-Channel | 1 Channel | 30 V | 4.4 A | 25 mOhms | 20 V | 1.3 V | 12.4 nC | - 55 C | + 150 C | 500 mW | Enhancement | AEC-Q101 | U-MOSIV | Reel | |||
Mfr: TK6A60W,S4VX TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 6.2A 30W FET 600V 390pF 12nC | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 6.2 A | 680 mOhms | 30 V | 3.7 V | 12 nC | - 55 C | + 150 C | 30 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: TK56E12N1,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 120V 112A 168W UMOSVIII 4200pF 69nC | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 120 V | 112 A | 5.8 mOhms | 20 V | 4 V | 69 nC | - 55 C | + 150 C | 168 W | Enhancement | U-MOSVIII-H | Tube | ||||
Mfr: TK9A55DA(STA4,Q,M) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch MOS 8.5A 550V 40W 1050pF 0.86 | 0In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 550 V | 8.5 A | 860 mOhms | 40 W | MOSVII | Tube | ||||||||||
0In Stock | Si | SMD/SMT | TSOP-6F | N-Channel | 1 Channel | 100 V | 3.5 A | 69 mOhms | 20 V | 2.5 V | 3.2 nC | + 175 C | 3 W | Enhancement | Reel | |||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 30 A | 90 mOhms | 30 V | 3 V | 47 nC | - 55 C | + 150 C | 45 W | Enhancement | DTMOSVI | Tube | |||||
Mfr: TK17A65W,S5X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TO-220SIS PD=45W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 17.3 A | 200 mOhms | 30 V | 3.5 V | 45 nC | - 55 C | + 150 C | 45 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: TK62N60W5,S1VF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs DTMOSIV 600V 45mOhm 61.8A 400W 6500pF | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 61.8 A | 36 mOhms | 30 V | 3 V | 205 nC | - 55 C | + 150 C | 400 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: TK290A60Y,S4X TTI: Not Assigned Toshiba Availability: Not Available OnlineMOSFETs N-Ch DTMOSV 600V 35W 730pF 11.5A | Not Available Online | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 11.5 A | 290 mOhms | 30 V | 4 V | 25 nC | - 55 C | + 150 C | 35 W | Enhancement | DTMOSV | Tube |