Toshiba - MOSFETs
3.381 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: TK60S06K3L(T6L1,NQ TTI: TK60S06K3L(T6L1,NQ Toshiba Availability: 0In StockMOSFETs N-Ch MOS 60A 60V 88W 2900pF 0.008 | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 60 V | 60 A | 8 mOhms | 20 V | 2 V | 60 nC | - 55 C | + 175 C | 88 W | Enhancement | AEC-Q100 | U-MOSIV | Reel | |||
Mfr: TJ8S06M3L(T6L1,NQ) TTI: TJ8S06M3L(T6L1,NQ) Toshiba Availability: 0In StockMOSFETs P-Ch MOS -8A -60V 27W 890pF 0.104 | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 8 A | 104 mOhms | - 20 V, 10 V | 2 V | 19 nC | - 55 C | + 175 C | 27 W | Enhancement | AEC-Q100 | U-MOSVI | Reel | |||
Mfr: TK2Q60D(Q) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch MOS 2A 600V 60W 280pF 4.3 Ohm | 0In Stock | Si | Through Hole | PW-Mold2-3 | N-Channel | 1 Channel | 600 V | 2 A | 4.3 Ohms | 30 V | 2.4 V | 7 nC | - 55 C | + 150 C | 60 W | Enhancement | MOSVII | Reel | ||||
Mfr: SSM3K333R,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs SM Sig N-CH MOS 30V 6A 20V VGSS | 0In Stock | Si | N-Channel | 1 Channel | AEC-Q100 | U-MOSVII-H | Reel | |||||||||||||||
Mfr: TK100E06N1,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 60V N-Ch PWR FET 1.9mOhm 10V 10uA | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 263 A | 1.9 mOhms | 20 V | 2 V | 140 nC | - 55 C | + 150 C | 255 W | Enhancement | U-MOSVIII-H | Tube | ||||
Mfr: TK40E06N1,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 60V N-Ch PWR FET 60A 67W 23nC | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 60 A | 10.4 mOhms | 20 V | 2 V | 23 nC | - 55 C | + 150 C | 67 W | Enhancement | U-MOSVIII-H | Tube | ||||
Mfr: TPN22006NH,LQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 60V 21A 18W UMOSVIII 710pF 12nC | 0In Stock | Si | SMD/SMT | TSON-8 | N-Channel | 1 Channel | 60 V | 21 A | 18 mOhms | 20 V | 4 V | 12 nC | - 55 C | + 150 C | 18 W | Enhancement | U-MOSVIII-H | Reel | ||||
Mfr: TPN3300ANH,LQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 100V 21A 27W UMOSVIII 680pF 11nC | 0In Stock | Si | SMD/SMT | TSON-8 | N-Channel | 1 Channel | 100 V | 21 A | 28 mOhms | 20 V | 4 V | 11 nC | - 55 C | + 150 C | 27 W | Enhancement | U-MOSVIII-H | Reel | ||||
Mfr: SSM6N68NU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=4A VDSS=30V | 0In Stock | Si | SMD/SMT | UDFN-6 | N-Channel | 2 Channel | 30 V | 4 A | 84 mOhms | - 8 V, 12 V | 1 V | 1.8 nC | - 55 C | + 150 C | 1 W | Enhancement | AEC-Q101 | U-MOSVII-H | Reel | |||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 57 A | 40 mOhms | 30 V | 3 V | 105 nC | - 55 C | + 150 C | 360 W | Enhancement | DTMOSVI | Tube | |||||
Mfr: SSM6J511NU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs Small-signal MOSFET Power MGMT switch | 0In Stock | Si | SMD/SMT | UDFN-6 | P-Channel | 1 Channel | 12 V | 14 A | 6.5 mOhms | 10 V | 1 V | 47 nC | - 55 C | + 150 C | 1.25 W | Enhancement | U-MOSVII | Reel | ||||
0In Stock | Si | SMD/SMT | TSOP-6F | N-Channel, P-Channel | 2 Channel | 20 V, 30 V | 4 A | 39.1 mOhms, 45 mOhms | - 12 V, - 8 V, 6 V, 12 V | 1 V, 1.2 V | 3.2 nC, 6.7 nC | + 150 C | 1.8 W | Enhancement | AEC-Q101 | Reel | ||||||
Mfr: SSM6N44FU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs Sm-signal/HiSpeed2n1 US6 (SOT-363) | 0In Stock | Si | SMD/SMT | US-6 | N-Channel | 2 Channel | 30 V | 100 mA | 4 Ohms | 20 V | 1.5 V | - 55 C | + 150 C | 200 mW | Enhancement | AEC-Q101 | MOSVI | Reel | ||||
0In Stock | Si | SMD/SMT | TSON-8 | P-Channel | 1 Channel | 30 V | 23 A | 7.8 mOhms | - 25 V, 20 V | 800 mV | 76 nC | - 55 C | + 150 C | 30 W | Enhancement | U-MOSVI | Reel | |||||
0In Stock | Si | AEC-Q101 | Reel | |||||||||||||||||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 40 V | 90 A | 4.3 mOhms | - 20 V, 10 V | 1 V | 172 nC | - 55 C | + 175 C | 180 W | Enhancement | U-MOSVI | Reel | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 900 V | 2.5 A | 4.6 Ohms | 30 V | 2.5 V | 15 nC | - 55 C | + 150 C | 35 W | Enhancement | MOSVIII | Tube | |||||
Not Available Online | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 800 V | 3 A | 4.9 Ohms | 30 V | 2.5 V | 12 nC | - 55 C | + 150 C | 80 W | Enhancement | MOSVIII | Reel | |||||
Mfr: TK20J60W,S1VE TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TO-3PN PD=165W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-3PN-3 | N-Channel | 1 Channel | 600 V | 20 A | 155 mOhms | 30 V | 3.7 V | 48 nC | - 55 C | + 150 C | 165 W | Enhancement | DTMOSIV | Tray | ||||
0In Stock | Si | Through Hole | TO-247-4 | N-Channel | 1 Channel | 650 V | 57 A | 40 mOhms | 30 V | 4 V | 105 nC | - 55 C | + 150 C | 360 W | Enhancement | DTMOSVI | Reel | |||||
0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 30 V | 320 A | 770 uOhms | 20 V | 2.3 V | 74 nC | + 150 C | 170 W | Enhancement | Reel | TPHR9003NL1,LQ(M | ||||||
0In Stock | Si | SMD/SMT | UF-6 | N-Channel, P-Channel | 2 Channel | 20 V | 1.5 A, 1.6 A | 247 mOhms, 430 mOhms | - 8 V, 10 V | 300 mV, 350 mV | 7.5 nC, 6.4 nC | - 55 C | + 150 C | 500 mW | Enhancement | AEC-Q101 | U-MOSIII | Reel | ||||
Mfr: SSM3K324R,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch U-MOSVI FET ID 4A 30VDSS 200pF | 0In Stock | Si | N-Channel | 1 Channel | U-MOSVII-H | Reel | ||||||||||||||||
0In Stock | Si | SMD/SMT | SOT-416-3 | N-Channel | 1 Channel | 20 V | 800 mA | 235 mOhms | 8 V | 400 mV | 1 nC | - 55 C | + 150 C | 500 mW | Enhancement | U-MOSVII-H | Reel | |||||
Mfr: TK16J60W,S1VQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 15.8A 130W FET 600V 1350pF 38nC | 0In Stock | Si | Through Hole | TO-3PN-3 | N-Channel | 1 Channel | 600 V | 15.8 A | 160 mOhms | 30 V | 3.7 V | 38 nC | - 55 C | + 150 C | 130 W | Enhancement | DTMOSIV |