Toshiba - MOSFETs
3.381 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SSM3K7002KFU,LXH TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs SMOS Low RON Nch Io: 0.4A Vdss: 60V Vgss | 0In Stock | Si | SMD/SMT | USM-3 | N-Channel | 1 Channel | 60 V | 400 mA | 1.75 Ohms | 20 V | 2.1 V | 390 pC | + 150 C | 700 mW | Enhancement | AEC-Q101 | Reel | |||||
Mfr: SSM6N35AFU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=.25A VDSS=20V | 0In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel | 2 Channel | 20 V | 250 mA | 750 mOhms, 750 mOhms | 10 V | 350 mV | 340 pC | - 55 C | + 150 C | 285 mW | Enhancement | U-MOSIII | Reel | ||||
Mfr: SSM6J808R,LXHF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs AUTO AEC-Q SS MOS P-ch Logic-Level Gate Drive VDSS:-40V IC:-7A PD:1.5W TSOP6F | 0In Stock | Si | SMD/SMT | TSOP6F | P-Channel | 1 Channel | 40 V | 7 A | 48 mOhms | - 20 V, 10 V | 2 V | 24.2 nC | + 150 C | 1.5 W | AEC-Q101 | Reel | SSM6J808R,LXHF(B | |||||
Mfr: TK3R3E08QM,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs UMOS10 TO-220AB 80V 3.3mohm | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 80 V | 120 A | 3.3 mOhms | 20 V | 3.5 V | 110 nC | + 175 C | 230 W | Enhancement | Tube | TK3R3E08QM,S1X(S | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 75 A | 8.2 mOhms | 20 V | 1.5 V | 28 nC | - 55 C | + 175 C | 81 W | Enhancement | U-MOSIX-H | Tube | |||||
Mfr: TK063Z60Z1,S1F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 600 V 0.063 Ohm N-ch MOSFET TO-247-4L(X) DTMOS | 0In Stock | Si | Through Hole | TO-247-4 | N-Channel | 1 Channel | 600 V | 37 A | 63 mOhms | 30 V | 4 V | 56 nC | + 150 C | 242 W | Enhancement | Tube | ||||||
Mfr: XPJ1R504PB,LXHQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 40V 1.54mOhm N-ch MOSFET AEC-Q S-TOGL | 0In Stock | Si | SMD/SMT | S-TOGL-6 | N-Channel | 1 Channel | 40 V | 120 A | 1.54 mOhms | 20 V | 3 V | 61 nC | + 175 C | 197 W | Enhancement | AEC-Q101 | Reel | |||||
0In Stock | Si | SMD/SMT | UFM-3 | N-Channel, SBD | 1 Channel | 20 V | 3.2 A | 10 V | AEC-Q101 | Reel | ||||||||||||
Mfr: TK30A06N1,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs MOSFET NCh11.5ohm VGS10V 10uA VDS60V | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 30 A | 12.2 mOhms | 20 V | 4 V | 16 nC | - 55 C | + 150 C | 25 W | Enhancement | U-MOSVIII-H | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 4 A | 3.5 Ohms | 30 V | 2.5 V | 15 nC | - 55 C | + 150 C | 35 W | Enhancement | MOSVIII | Tube | |||||
Mfr: SSM6N58NU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch Sm Sig FET 4A 30V 2-in-1 | 0In Stock | Si | SMD/SMT | UDFN-6 | N-Channel | 2 Channel | 30 V | 4 A | 112 mOhms | 12 V | 1 V | - 55 C | + 150 C | 1 W | Enhancement | U-MOSVII-H | Reel | |||||
Mfr: TK31A60W,S4VX TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 30.8A 45W FET 600V 3000pF 86nC | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 30.8 A | 73 mOhms | 30 V | 3.7 V | 86 nC | - 55 C | + 150 C | 45 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: SSM3K16FU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs Small-signal MOSFET High Speed Switching | 0In Stock | Si | SMD/SMT | SOT-323 | N-Channel | 1 Channel | 20 V | 100 mA | 3 Ohms | 10 V | 600 mV | + 150 C | 150 mW | Enhancement | AEC-Q101 | MOSVI | Reel | |||||
0In Stock | Si | Through Hole | TO-251-3 | N-Channel | 1 Channel | 650 V | 7.8 A | 550 mOhms | 30 V | 2.5 V | 16 nC | - 55 C | + 150 C | 80 W | Enhancement | DTMOSIV | Tube | |||||
Mfr: SSM6J502NU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs SM Sig P-CH MOS ID -6A -20V -8 VGSS | 0In Stock | Si | SMD/SMT | UDFN6B-6 | P-Channel | 1 Channel | 20 V | 6 A | 60.5 mOhms | 8 V | 1 W | U-MOSVI | Reel | |||||||||
Mfr: TK8A50DA(STA4,Q,M) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch MOS 7.5A 500V 35W 700pF 1.04 Ohm | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 7.5 A | 760 mOhms | 30 V | 4.4 V | 16 nC | - 55 C | + 150 C | 35 W | Enhancement | MOSVII | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 20 A | 150 mOhms | 30 V | 3 V | 55 nC | - 55 C | + 150 C | 165 W | Enhancement | DTMOSIV | Tube | |||||
0In Stock | Si | SMD/SMT | SOT-323-3 | N-Channel | 1 Channel | 30 V | 100 mA | 3.6 Ohms | 20 V | 800 mV | - 55 C | + 150 C | 150 mW | Enhancement | U-MOSIII | Reel | ||||||
Mfr: TPN2010FNH,L1Q TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs UMOSVIII 250V 200m (VGS=10V) TSON-ADV | 0In Stock | Si | SMD/SMT | TSON-8 | N-Channel | 1 Channel | 250 V | 9.9 A | 168 mOhms | 20 V | 4 V | 7 nC | - 55 C | + 150 C | 39 W | Enhancement | U-MOSVIII-H | Reel | ||||
Mfr: TK110A65Z,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs MOSFET 650V 110mOhms DTMOS-VI | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 24 A | 110 mOhms | 30 V | 4 V | 40 nC | - 55 C | + 150 C | 45 W | Enhancement | Tube | |||||
Mfr: TK62Z60X,S1F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TO-247-4L PD=400W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-247-4 | N-Channel | 1 Channel | 600 V | 61.8 A | 40 mOhms | 30 V | 3.5 V | 135 nC | - 55 C | + 150 C | 400 W | Enhancement | DTMOSIV-H | Tube | ||||
Mfr: TK12E80W,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 800V 1400pF 23nC 11.5A 165W | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 11.5 A | 380 mOhms | 20 V | 3 V | 23 nC | - 55 C | + 150 C | 165 W | Enhancement | DTMOSIV | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 8 A | 440 mOhms | 30 V | 3 V | 22 nC | - 55 C | + 150 C | 30 W | Enhancement | DTMOSIV | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 17.3 A | 170 mOhms | 30 V | 2.5 V | 45 nC | - 55 C | + 150 C | 165 W | Enhancement | DTMOSIV | Tube | |||||
0In Stock | Si | N-Channel | 1 Channel | U-MOSIII | Reel |