Toshiba - MOSFETs
3.381 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | Si | SMD/SMT | UFM-3 | N-Channel | 1 Channel | 30 V | 6 A | 27.6 mOhms | 20 V | 2.5 V | 10.1 nC | - 55 C | + 150 C | 800 mW | Enhancement | AEC-Q101 | U-MOSIV | Reel | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 6.5 A | 950 mOhms | 20 V | 3 V | 13 nC | - 55 C | + 150 C | 35 W | Enhancement | DTMOSIV | Tube | |||||
Mfr: TK16J60W5,S1VQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TO-3PN(OS) PD=130W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-3PN-3 | N-Channel | 1 Channel | 600 V | 15.8 A | 230 mOhms | 30 V | 4.5 V | 43 nC | - 55 C | + 150 C | 130 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: TK4R1A10PL,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TO-220SIS PD=54W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 80 A | 5.9 mOhms | 20 V | 2.5 V | 104 nC | - 55 C | + 175 C | 54 W | Enhancement | U-MOSIX-H | Tube | ||||
0In Stock | Si | SMD/SMT | S-Mini-3 | P-Channel | 1 Channel | 20 V | 2 A | 150 mOhms | - 8 V, 6 V | 1 V | 4.6 nC | - 55 C | + 150 C | 1.2 W | Enhancement | AEC-Q101 | U-MOSVI | Reel | ||||
Mfr: TK750A60F,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch TT-MOSIX 600V 40W 1130pF 10A | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 10 A | 750 mOhms | 30 V | 2 V | 30 nC | - 55 C | + 150 C | 40 W | Enhancement | MOSIX | Tube | ||||
Mfr: TK12A45D,S5Q(J TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch MOS 12A 450V 45W 1200pF 0.52 | 0In Stock | Si | MOSVII | Tube | ||||||||||||||||||
0In Stock | Si | SMD/SMT | SOP-8 | P-Channel | 1 Channel | 30 V | 45 A | 4 mOhms | - 25 V, 20 V | 2 V | 190 nC | + 150 C | 45 W | Enhancement | ||||||||
0In Stock | Si | SMD/SMT | D2PAK-3 | N-Channel | 1 Channel | 650 V | 13.7 A | 220 mOhms | 30 V | 2.5 V | 35 nC | - 55 C | + 150 C | 130 W | Enhancement | DTMOSIV | Reel | |||||
Mfr: TK20V60W5,LVQ TTI: Not Assigned Toshiba Availability: Not Available OnlineMOSFETs Power MOSFET N-Channel | Not Available Online | Si | SMD/SMT | DFN8x8-5 | N-Channel | 1 Channel | 600 V | 20 A | 156 mOhms | 30 V | 3 V | 55 nC | - 55 C | + 150 C | 156 W | Enhancement | DTMOSIV | Reel | ||||
Mfr: TPH2R306NH,L1Q TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs U-MOSVIII-H 60V 130A 72nC MOSFET | 0In Stock | Si | N-Channel | 1 Channel | U-MOSVIII-H | Reel | ||||||||||||||||
Mfr: TK72E12N1,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 120V 179A 225W UMOSVIII 130nC .0044 | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 120 V | 179 A | 4.4 mOhms | 20 V | 2 V | 130 nC | + 150 C | 255 W | Enhancement | U-MOSVIII-H | Tube | |||||
Mfr: SSM6P49NU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs SM Sig MOS 2 in 1 P-Ch -4A -20V 12V GS | 0In Stock | Si | SMD/SMT | UDFN-6 | P-Channel | 2 Channel | 20 V | 4 A | 157 mOhms | 12 V | 1.2 V | - 55 C | + 150 C | 1 W | Enhancement | U-MOSVI | Reel | |||||
Mfr: TK35E08N1,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 80V N-Ch PWR FET 55A 72W 25nC | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 80 V | 55 A | 12.2 mOhms | 20 V | 2 V | 25 nC | - 55 C | + 150 C | 72 W | Enhancement | U-MOSVIII-H | Tube | ||||
Mfr: TK3R9E10PL,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TO-220 PD=230W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 100 A | 5.8 mOhms | 20 V | 2.5 V | 96 nC | - 55 C | + 175 C | 230 W | Enhancement | U-MOSIX-H | Tube | ||||
Mfr: TK4K1A60F,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TO-220SIS PD=30W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 2 A | 4.1 Ohms | 30 V | 4 V | 8 nC | - 55 C | + 150 C | 30 W | Enhancement | MOSIX | Tube | ||||
0In Stock | Si | SMD/SMT | N-Channel | 1 Channel | 80 V | 120 A | 2.43 mOhms | 20 V | 3.5 V | 87 nC | + 175 C | 210 W | Enhancement | Reel | ||||||||
Not Available Online | Si | SMD/SMT | VESM-3 | P-Channel | 1 Channel | 20 V | 800 mA | 4 Ohms | - 8 V, 6 V | 1 V | 1.6 nC | - 55 C | + 150 C | 150 mW | Enhancement | AEC-Q101 | U-MOSVI | Reel | ||||
Not Available Online | Si | SMD/SMT | UFM-3 | N-Channel | 1 Channel | 30 V | 2 A | 93 mOhms | 12 V | 1 V | 1.5 nC | - 55 C | + 150 C | 800 mW | Enhancement | AEC-Q101 | U-MOSIII | Reel | ||||
0In Stock | Si | SMD/SMT | UF-6 | N-Channel | 1 Channel | 30 V | 1.6 A | 122 mOhms | 20 V | 2.6 V | 5.1 nC | - 55 C | + 150 C | 500 mW | Enhancement | AEC-Q101 | U-MOSIII | Reel | ||||
Mfr: TJ30S06M3L,LXHQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 68W 1MHz Automotive; AEC-Q101 | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 30 A | 21.8 mOhms | - 20 V, 10 V | 3 V | 80 nC | + 175 C | 68 W | Enhancement | AEC-Q101 | Reel | TJ30S06M3L,LXHQ(O | ||||
Mfr: TK100S04N1L,LXHQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 180W 1MHz Automotive; AEC-Q101 | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 40 V | 100 A | 2.3 mOhms | 20 V | 2.5 V | 76 nC | + 175 C | 180 W | Enhancement | AEC-Q101 | Reel | TK100S04N1L,LXHQ(O | ||||
Mfr: TK4R3E06PL,S1X TTI: Not Assigned Toshiba Availability: Not Available OnlineMOSFETs N-Ch 60V 3280pF 48.2nC 106A 87W | Not Available Online | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 106 A | 3.3 mOhms | 20 V | 1.5 V | 48.2 nC | - 55 C | + 175 C | 87 W | Enhancement | U-MOSIX-H | Tube | ||||
Mfr: SSM3J356R,LXHF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs P Channel -60V -2A AECQ MOSFET | 0In Stock | Si | SMD/SMT | SOT-23F-3 | P-Channel | 1 Channel | 60 V | 2 A | 360 mOhms | - 20 V, 10 V | 2 V | 8.3 nC | - 55 C | + 150 C | 2 W | Enhancement | AEC-Q101 | Reel | ||||
0In Stock | Si | Through Hole | TO-247-4 | N-Channel | 1 Channel | 650 V | 24 A | 110 mOhms | 10 V | 3 V | 40 nC | - 55 C | + 150 C | 190 W | Enhancement | Tube |