Toshiba - MOSFETs
3.364 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | Si | Through Hole | TO-220SIS-3 | N-Channel | 1 Channel | 600 V | 30 A | 80 mOhms | 30 V | 4 V | 43 nC | + 150 C | 45 W | Enhancement | Tube | |||||||
0In Stock | Si | SMD/SMT | TOLL-9 | N-Channel | 1 Channel | 600 V | 25 A | 99 mOhms | 30 V | 4 V | 36 nC | + 150 C | 176 W | Enhancement | Reel | |||||||
Mfr: TK3R1E04PL,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 40V 4670pF 63.4nC 128A 87W | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 40 V | 128 A | 2.5 mOhms | - 20 V, 20 V | 1.4 V | 63.4 nC | - 55 C | + 175 C | 87 W | Enhancement | U-MOSIX-H | Tube | ||||
Mfr: SSM6J212FE,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs P-Ch U-MOS VI FET ID -4A -20VDSS 500mW | 0In Stock | Si | SMD/SMT | ES6-6 | P-Channel | 1 Channel | 20 V | 4 A | 94 mOhms | - 8 V, 8 V | 1 V | 14.1 nC | - 55 C | + 150 C | 500 mW | Enhancement | U-MOSVI | Reel | ||||
Mfr: TK40E06N1,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 60V N-Ch PWR FET 60A 67W 23nC | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 60 A | 10.4 mOhms | - 20 V, 20 V | 2 V | 23 nC | - 55 C | + 150 C | 67 W | Enhancement | U-MOSVIII-H | Tube | ||||
Mfr: TPN22006NH,LQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 60V 21A 18W UMOSVIII 710pF 12nC | 0In Stock | Si | SMD/SMT | TSON-8 | N-Channel | 1 Channel | 60 V | 21 A | 18 mOhms | - 20 V, 20 V | 4 V | 12 nC | - 55 C | + 150 C | 18 W | Enhancement | U-MOSVIII-H | Reel | ||||
Mfr: SSM3K333R,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs SM Sig N-CH MOS 30V 6A 20V VGSS | 0In Stock | Si | N-Channel | 1 Channel | AEC-Q100 | U-MOSVII-H | Reel | |||||||||||||||
Mfr: SSM6N36FE,LM TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 20V VDSS 10V VGSS N-Ch 150mW PD 1.5V | 0In Stock | Si | SMD/SMT | ES6-6 | N-Channel | 2 Channel | 20 V | 500 mA | 630 mOhms | - 10 V, 10 V | 350 mV | 1.23 nC | - 55 C | + 150 C | 150 mW | Enhancement | AEC-Q100 | U-MOSIII | Reel | |||
Mfr: TK6P60W,RVQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 9.7A 100W FET 600V 700pF 20nC | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 6.2 A | 820 mOhms | - 30 V, 30 V | 2.7 V | 12 nC | - 55 C | + 150 C | 60 W | Enhancement | DTMOSIV | Reel | ||||
0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 30 V | 90 A | 4.8 mOhms | - 20 V, 20 V | 1.1 V | 22 nC | - 55 C | + 175 C | 69 W | Enhancement | U-MOSIX-H | Reel | |||||
0In Stock | Si | SMD/SMT | UFV-5 | N-Channel | 1 Channel | 20 V | 2.4 A | 65 mOhms | - 20 V, 20 V | 1.2 V | 2.2 nC | - 55 C | + 125 C | 500 mW | Enhancement | Reel | ||||||
0In Stock | Si | AEC-Q101 | Reel | |||||||||||||||||||
Mfr: SSM6N44FU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs Sm-signal/HiSpeed2n1 US6 (SOT-363) | 0In Stock | Si | SMD/SMT | US-6 | N-Channel | 2 Channel | 30 V | 100 mA | 4 Ohms | - 20 V, 20 V | 1.5 V | - 55 C | + 150 C | 200 mW | Enhancement | AEC-Q101 | MOSVI | Reel | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 900 V | 2.5 A | 4.6 Ohms | - 30 V, 30 V | 2.5 V | 15 nC | - 55 C | + 150 C | 35 W | Enhancement | MOSVIII | Tube | |||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 800 V | 3 A | 4.9 Ohms | - 30 V, 30 V | 2.5 V | 12 nC | - 55 C | + 150 C | 80 W | Enhancement | MOSVIII | Reel | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 13.7 A | 250 mOhms | - 30 V, 30 V | 3 V | 40 nC | - 55 C | + 150 C | 130 W | Enhancement | DTMOSIV | Tube | |||||
Mfr: TK13A50D(STA4,Q,M) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch MOS 13A 500V 45W 1800pF 0.40 | 0In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 500 V | 13 A | 400 mOhms | 45 W | MOSVII | Tube | ||||||||||
Mfr: XPN6R706NC,L1XHQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 100W 1MHz Automotive; AEC-Q101 | 0In Stock | Si | SMD/SMT | TSON-Advance-8 | N-Channel | 1 Channel | 60 V | 40 A | 6.7 mOhms | - 20 V, 20 V | 2.5 V | 35 nC | + 175 C | 100 W | Enhancement | AEC-Q101 | Reel | XPN6R706NC,L1XHQ(O | ||||
0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 100 V | 190 A | 2.7 mOhms | 20 V | 4.3 V | 52 nC | + 175 C | 210 W | Enhancement | Reel | |||||||
Mfr: SSM6N67NU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=4A VDSS=30V | 0In Stock | Si | SMD/SMT | UDFN-6 | N-Channel | 2 Channel | 30 V | 4 A | 39.1 mOhms | - 8 V, 12 V | 400 mV | 3.2 nC | - 55 C | + 150 C | 1 W | Enhancement | AEC-Q101 | U-MOSVII-H | Reel | |||
Mfr: XPN7R104NC,L1XHQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 65W 1MHz Automotive; AEC-Q101 | 0In Stock | Si | SMD/SMT | TSON-Advance-8 | N-Channel | 1 Channel | 40 V | 20 A | 7.1 mOhms | - 20 V, 20 V | 2.5 V | 21 nC | + 175 C | 65 W | Enhancement | AEC-Q101 | Reel | XPN7R104NC,L1XHQ(O | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 25 A | 120 mOhms | - 30 V, 30 V | 3 V | 60 nC | - 55 C | + 150 C | 45 W | Enhancement | DTMOSIV-H | Tube | |||||
0In Stock | Si | SMD/SMT | DSOP-8 | N-Channel | 1 Channel | 100 V | 150 A | 3.7 mOhms | - 20 V, 20 V | 1.5 V | 67 nC | - 55 C | + 175 C | 170 W | Enhancement | U-MOSIX-H | Reel | |||||
Mfr: TK100A10N1,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs MOSFET NCh 3.1ohm VGS10V10uAVDS100V | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 100 A | 3.1 mOhms | - 20 V, 20 V | 4 V | 140 nC | - 55 C | + 150 C | 45 W | Enhancement | U-MOSVIII-H | Tube | ||||
Mfr: TK3R1A04PL,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 40V 4670pF 63.4nC 82A 36W | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 40 V | 82 A | 2.5 mOhms | - 20 V, 20 V | 1.4 V | 63.4 nC | - 55 C | + 175 C | 36 W | Enhancement | U-MOSIX-H | Tube |
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