Toshiba - MOSFETs
3.364 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: TPW1R104PB,L1XHQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 132W 1MHz Automotive; AEC-Q101 | 0In Stock | Si | SMD/SMT | DSOP-Advance-8 | N-Channel | 1 Channel | 40 V | 120 A | 1.14 mOhms | - 20 V, 20 V | 3 V | 55 nC | - 55 C | + 175 C | 132 W | Enhancement | AEC-Q101 | Reel | TPW1R104PB,L1XHQ(O | |||
Mfr: TK3R2A10PL,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TO-220SIS PD=54W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 100 A | 4.3 mOhms | - 20 V, 20 V | 2.5 V | 161 nC | - 55 C | + 175 C | 54 W | Enhancement | U-MOSIX-H | Tube | ||||
Mfr: SSM6L35FU(TE85L,F) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch Sm Sig FET 0.1A -0.1A 20V 2-in1 | 0In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel, P-Channel | 2 Channel | 20 V | 100 mA, 180 mA | 11 Ohms | - 10 V, 10 V | 1 V | - 55 C | + 150 C | 200 mW | Enhancement | AEC-Q101 | MOSVI | Reel | ||||
Mfr: SSM6N16FUTE85LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch Sm Sig FET 0.1A -0.1A 20V 2-in1 | 0In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel | 2 Channel | 20 V | 100 mA | 5.2 Ohms | - 10 V, 10 V | 1.1 V | - 55 C | + 150 C | 200 mW | Enhancement | Reel | ||||||
Mfr: SSM6J214FE(TE85L,F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=-3.6A VDSS=-30V | 0In Stock | Si | SMD/SMT | SOT-563-6 | P-Channel | 1 Channel | 30 V | 3.6 A | 50 mOhms | - 12 V, 12 V | 1.2 V | 7.9 nC | - 55 C | + 150 C | 700 mW | Enhancement | U-MOSVI | Reel | ||||
Mfr: TPHR9203PL,L1Q TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 30V 5800pF 81nC 280A 132W | 0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 30 V | 280 A | 610 uOhms | - 20 V, 20 V | 1.1 V | 81 nC | - 55 C | + 175 C | 132 W | Enhancement | U-MOSIX-H | Reel | ||||
Mfr: TK290P65Y,RQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch DTMOSV 650V 100W 730pF 11.5A | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 650 V | 11.5 A | 290 mOhms | - 30 V, 30 V | 4 V | 25 nC | - 55 C | + 150 C | 100 W | Enhancement | DTMOSV | Reel | ||||
Mfr: SSM3K361TU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=3.5A VDSS=100V | 0In Stock | Si | SMD/SMT | UFM-3 | N-Channel | 1 Channel | 100 V | 3.5 A | 51 mOhms | - 20 V, 20 V | 1.5 V | 3.2 nC | - 55 C | + 175 C | 1 W | Enhancement | AEC-Q101 | U-MOSVIII-H | Reel | |||
Mfr: SSM3K16FS,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=0.1A VDSS=20V | 0In Stock | Si | SMD/SMT | SOT-416-3 | N-Channel | 1 Channel | 20 V | 100 mA | 3 Ohms | - 10 V, 10 V | 600 mV | + 150 C | 100 mW | Enhancement | AEC-Q101 | MOSVI | Reel | |||||
0In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel | 2 Channel | 20 V | 500 mA | 460 mOhms, 460 mOhms | - 20 V, 20 V | 350 mV | 1.23 nC | - 55 C | + 150 C | 200 mW | Enhancement | AEC-Q101 | MOSVI | Reel | ||||
Mfr: SSM3J338R,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs Small-signal MOSFET Vdss= -12V, ID= -6A | 0In Stock | Si | SMD/SMT | SOT-23F | P-Channel | 1 Channel | 12 V | 6 A | 17.6 mOhms | - 8 V, 8 V | 300 mV | + 150 C | 1 W | Enhancement | U-MOSVII | Reel | ||||||
Mfr: TK31V60X,LQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs DTMOSIV-High Speed 600V 88mVGS=10V) | 0In Stock | Si | SMD/SMT | DFN8x8-5 | N-Channel | 1 Channel | 600 V | 30.8 A | 78 mOhms | - 30 V, 30 V | 3.5 V | 65 nC | - 55 C | + 150 C | 240 W | Enhancement | DTMOSIV-H | Reel | ||||
Mfr: SSM3J325F,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs P-Ch Small Signal 270pF -2A -20V 4.6nC | 0In Stock | Si | SMD/SMT | SOT-346-3 | P-Channel | 1 Channel | 20 V | 2 A | 311 mOhms | - 8 V, 8 V | 1 V | 4.6 nC | - 55 C | + 150 C | 600 mW | Enhancement | U-MOSVI | Reel | ||||
Mfr: TK39N60W,S1VF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs DTMOSIV 600V 65mOhm 38.8A 270W 4100pF | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 38.8 A | 55 mOhms | - 30 V, 30 V | 3.7 V | 110 nC | - 55 C | + 150 C | 270 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: TK10A80E,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs PLN MOS 800V 1000m (VGS=10V) TO-220SIS | 0In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 800 V | 10 A | 700 mOhms | - 30 V, 30 V | 4 V | 46 nC | - 55 C | + 150 C | 50 W | Enhancement | MOSVIII | Tube | ||||
Mfr: TK56A12N1,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs MOSFET NCh6.2ohm VGS10V10uAVDS120V | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 120 V | 56 A | 6.2 mOhms | - 20 V, 20 V | 4 V | 69 nC | - 55 C | + 150 C | 45 W | Enhancement | U-MOSVIII-H | Tube | ||||
Mfr: TK22A10N1,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs MOSFET NCh12.2ohm 10V 10uA VDS100V | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 22 A | 11.5 mOhms | - 20 V, 20 V | 4 V | 28 nC | - 55 C | + 150 C | 30 W | Enhancement | U-MOSVIII-H | Tube | ||||
Mfr: TK16A60W,S4VX TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 600V 15.8A 40W DTMOSIV 1350pF 38nC | 0In Stock | Si | N-Channel | 1 Channel | DTMOSIV | Tube | ||||||||||||||||
Mfr: SSM3J133TU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs Small-signal MOSFET P-Channel | 0In Stock | Si | SMD/SMT | UFM-3 | P-Channel | 1 Channel | 20 V | 5.5 A | 24.9 mOhms | - 8 V, 8 V | 1 V | 12.8 nC | - 55 C | + 150 C | 1 W | Enhancement | U-MOSVI | Reel | ||||
0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 38 V | 2 A | 150 mOhms | - 20 V, 20 V | 700 mV | 3 nC | - 55 C | + 150 C | 1 W | Enhancement | AEC-Q101 | U-MOSIV | Reel | ||||
Mfr: SSM6P15FE(TE85L,F) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=-.1A VDSS=-30V | 0In Stock | Si | SMD/SMT | ES6-6 | P-Channel | 2 Channel | 30 V | 100 mA | 8 Ohms | - 20 V, 20 V | 1.7 V | - 55 C | + 150 C | 150 mW | Enhancement | AEC-Q100 | MOSVI | Reel | ||||
0In Stock | Si | SMD/SMT | PS-8 | P-Channel | 1 Channel | 40 V | 8 A | 18 mOhms | - 20 V, 10 V | 2 V | 44.6 nC | - 55 C | + 175 C | 2.01 W | Enhancement | AEC-Q101 | U-MOSIV | Reel | ||||
0In Stock | Si | SMD/SMT | UFM-3 | P-Channel | 1 Channel | 20 V | 3.2 A | 93 mOhms | - 8 V, 6 V | 1 V | 4.7 nC | + 150 C | 1 W | Enhancement | U-MOSVI | Reel | ||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 29 A | 95 mOhms | - 30 V, 30 V | 4.5 V | 50 nC | + 150 C | 230 W | Enhancement | Tube | |||||||
0In Stock | Si | SMD/SMT | SOT-23F-3 | N-Channel | 1 Channel | 20 V | 4 A | 25 mOhms | - 8 V, 8 V | 400 mV | 3.6 nC | - 55 C | + 150 C | 2 W | Enhancement | U-MOSVI | Reel |
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