Toshiba - MOSFETs
3.364 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: TK13A50DA(STA4,Q,M TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch MOS 13A 500V 45W 1550pF 0.47 | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 12.5 A | 390 mOhms | - 30 V, 30 V | 4 V | 28 nC | - 55 C | + 150 C | 45 W | Enhancement | MOSVII | Tube | ||||
Mfr: SSM3H137TU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=2A VDSS=34V | 0In Stock | Si | SMD/SMT | UFM-3 | N-Channel | 1 Channel | 34 V | 2 A | 240 mOhms | - 20 V, 20 V | 700 mV | + 150 C | 1 W | Enhancement | AEC-Q101 | U-MOSIV | Reel | |||||
0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 40 V | 180 A | 2.1 mOhms | - 20 V, 20 V | 1.4 V | 78 nC | - 55 C | + 175 C | 116 W | Enhancement | U-MOSIX-H | Reel | |||||
Not Available Online | Si | SMD/SMT | USM-3 | N-Channel | 1 Channel | 30 V | 100 mA | 3.2 Ohms | - 20 V, 20 V | 1.5 V | - 55 C | + 150 C | 150 mW | Enhancement | U-MOSIII | Reel | ||||||
0In Stock | Si | SMD/SMT | UDFN-6 | N-Channel | 1 Channel | 20 V | 3 A | 55 mOhms | - 10 V, 10 V | 1 V | 5.9 nC | - 55 C | + 150 C | 500 mW | Enhancement | AEC-Q101 | U-MOSIII | Reel | ||||
0In Stock | Si | SMD/SMT | UF-6 | P-Channel | 1 Channel | 30 V | 1.4 A | 226 mOhms | - 20 V, 20 V | 2 V | 2.9 nC | - 55 C | + 150 C | 500 mW | Enhancement | AEC-Q101 | U-MOSIII | Reel | ||||
0In Stock | Si | SMD/SMT | PS-8 | N-Channel | 1 Channel | 40 V | 5 A | 31.8 mOhms | - 20 V, 20 V | 2 V | 11.8 nC | - 55 C | + 175 C | 1.96 W | Enhancement | AEC-Q101 | U-MOSIV | Reel | ||||
0In Stock | Si | SMD/SMT | CST-3 | P-Channel | 1 Channel | 30 V | 100 mA | 12 Ohms | - 20 V, 20 V | 1.7 V | 3.6 nC | + 150 C | 100 mW | Enhancement | Reel | |||||||
Mfr: SSM3J36TU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs Sm-signal/Hi-Speed UFM (SOT-323F) | 0In Stock | Si | SMD/SMT | UFM-3 | P-Channel | 1 Channel | 20 V | 330 mA | 1.31 Ohms | - 8 V, 8 V | 1 V | 1.2 nC | + 150 C | 500 mW | Enhancement | AEC-Q101 | MOSIII | Reel | ||||
Mfr: TK31Z60X,S1F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TO-247-4L PD=230W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-247-4 | N-Channel | 1 Channel | 600 V | 30.8 A | 88 mOhms | - 30 V, 30 V | 3.5 V | 65 nC | - 55 C | + 150 C | 230 W | Enhancement | DTMOSIV-H | Tube | ||||
Mfr: TK49N65W5,S1F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TO247(OS) PD=400W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 49.2 A | 57 mOhms | - 30 V, 30 V | 4.5 V | 185 nC | - 55 C | + 150 C | 400 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: TK1R4S04PB,LXHQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 180W 1MHz Automotive; AEC-Q101 | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 40 V | 120 A | 1.35 mOhms | - 20 V, 20 V | 3 V | 103 nC | + 175 C | 180 W | Enhancement | AEC-Q101 | Reel | TK1R4S04PB,LXHQ(O | ||||
Mfr: TK065Z65Z,S1F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs PWR MOSFET TRANSISTR PD=270W F=1MHz | 0In Stock | Si | Through Hole | TO-247-4L-4 | N-Channel | 1 Channel | 650 V | 38 A | 65 mOhms | - 30 V, 30 V | 4 V | 62 nC | - 55 C | + 150 C | 270 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 60 V | 25 A | 18.5 mOhms | - 20 V, 20 V | 1.5 V | 15 nC | - 55 C | + 175 C | 57 W | Enhancement | AEC-Q101 | U-MOSVIII-H | Reel | ||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 100 V | 33 A | 9.7 mOhms | - 20 V, 20 V | 2.5 V | 33 nC | - 55 C | + 175 C | 125 W | Enhancement | AEC-Q101 | Reel | |||||
Mfr: SSM3K341TU,LXHF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N Channel 60V 6A AECQ MOSFET | 0In Stock | Si | SMD/SMT | UFM-3 | N-Channel | 1 Channel | 60 V | 6 A | 36 mOhms | - 20 V, 20 V | 2.5 V | 9.3 nC | - 55 C | + 175 C | 1.8 W | Enhancement | AEC-Q101 | Reel | ||||
Mfr: TK2A65D(STA4,Q,M) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch MOS 2A 650V 30W 380pF 3.26 | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 2 A | 3.26 Ohms | - 30 V, 30 V | 2.4 V | 9 nC | - 55 C | + 150 C | 30 W | Enhancement | MOSVII | Tube | ||||
Mfr: TPHR6704RL,LQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-ch MOSFET 40V 0.00067Ohm SOP Advance(N) U-MOS11-H | 0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 40 V | 420 A | 0.67 Ohms | 20 V | 2 V | 88 nC | + 175 C | 210 W | Enhancement | Reel | ||||||
0In Stock | Si | Through Hole | TO-220SIS-3 | N-Channel | 1 Channel | 650 V | 24 A | 115 mOhms | 30 V | 4.5 V | 42 nC | + 150 C | 45 W | Enhancement | Tube | |||||||
Mfr: SSM6N16FE,L3F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs Sm-signal/HiSpeed2n1 ES6 (SOT-563) | 0In Stock | Si | SMD/SMT | ES-6 | N-Channel | 2 Channel | 20 V | 100 mA | 3 Ohms | - 10 V, 10 V | 1.1 V | + 150 C | 150 mW | Enhancement | MOSVI | Reel | ||||||
Mfr: SSM3J66MFV,L3XHF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs AUTO AEC-Q SS MOS P-ch Low Voltage Gate Drive VDSS:-20V Ic:-0.8A SOT-723 | 0In Stock | Si | SMD/SMT | VESM-3 | P-Channel | 1 Channel | 20 V | 800 mA | 480 mOhms | - 8 V, 6 V | 1 V | 1.6 nC | + 150 C | 500 mW | Enhancement | AEC-Q101 | Reel | SSM3J66MFV,L3XHF(B | ||||
Mfr: TK110N65Z,S1F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs MOSFET 650V 110mOhms DTMOS-VI | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 24 A | 110 mOhms | - 30 V, 30 V | 4 V | 40 nC | - 55 C | + 150 C | 190 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 150 V | 77 A | 14.1 mOhms | - 20 V, 20 V | 4.5 V | 31 nC | + 175 C | 170 W | Enhancement | Reel | |||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 6.8 A | 640 mOhms | - 30 V, 30 V | 2.5 V | 15 nC | - 55 C | + 150 C | 30 W | Enhancement | DTMOSIV | Tube | |||||
Mfr: XSM6K519NW,LXHF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-ch MOSFET, 40 V, 8.0 A, 0.0118 ohm at 10V, DFN2020B(WF) | 0In Stock | Si | SMD/SMT | DFN-6 | N-Channel | 1 Channel | 40 V | 8 A | 17.8 mOhms | 20 V | 2.5 V | 6.5 nC | + 175 C | 4.3 W | Enhancement | Reel |
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