Toshiba - MOSFETs
3.364 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: TK3R9E10PL,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TO-220 PD=230W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 100 A | 5.8 mOhms | - 20 V, 20 V | 2.5 V | 96 nC | - 55 C | + 175 C | 230 W | Enhancement | U-MOSIX-H | Tube | ||||
Mfr: TK4K1A60F,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TO-220SIS PD=30W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 2 A | 4.1 Ohms | - 30 V, 30 V | 4 V | 8 nC | - 55 C | + 150 C | 30 W | Enhancement | MOSIX | Tube | ||||
0In Stock | Si | Through Hole | TO-247-4 | N-Channel | 1 Channel | 650 V | 24 A | 110 mOhms | - 10 V, 10 V | 3 V | 40 nC | - 55 C | + 150 C | 190 W | Enhancement | Tube | ||||||
Mfr: TK33S10N1Z,LXHQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 125W 1MHz Automotive; AEC-Q101 | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 100 V | 33 A | 9.7 mOhms | - 20 V, 20 V | 4 V | 28 nC | + 175 C | 125 W | Enhancement | AEC-Q101 | Reel | TK33S10N1Z,LXHQ(O | ||||
Mfr: XPW6R30ANB,L1XHQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 132W 1MHz Automotive; AEC-Q101 | 0In Stock | Si | SMD/SMT | DSOP-Advance-8 | N-Channel | 1 Channel | 100 V | 45 A | 6.3 mOhms | - 20 V, 20 V | 3.5 V | 52 nC | + 175 C | 132 W | Enhancement | AEC-Q101 | Reel | XPW6R30ANB,L1XHQ(O | ||||
0In Stock | Si | AEC-Q101 | Reel | |||||||||||||||||||
Mfr: SSM3K361TU,LXHF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N Channel 100V 3.5A AECQ MOSFET | 0In Stock | Si | SMD/SMT | UFM-3 | N-Channel | 1 Channel | 100 V | 3.5 A | 69 mOhms | - 20 V, 10 V | 2.5 V | 3.2 nC | - 55 C | + 175 C | 1.8 W | Enhancement | AEC-Q101 | Reel | ||||
Mfr: TK12A45D,S5Q(J TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch MOS 12A 450V 45W 1200pF 0.52 | 0In Stock | Si | MOSVII | Tube | ||||||||||||||||||
Mfr: SSM5P15FU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=-0.1A VDSS=-30V | 0In Stock | Si | SMD/SMT | SOT-353-5 | P-Channel | 2 Channel | 30 V | 100 mA | 12 Ohms | - 20 V, 20 V | 1.7 V | + 150 C | 200 mW | Enhancement | MOSVI | Reel | ||||||
0In Stock | Si | SMD/SMT | TO-220SM-3 | N-Channel | 1 Channel | 100 V | 160 A | 2.4 mOhms | - 20 V, 20 V | 3.5 V | 122 nC | - 55 C | + 175 C | 375 W | Enhancement | AEC-Q101 | Reel | |||||
Mfr: TK35E08N1,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 80V N-Ch PWR FET 55A 72W 25nC | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 80 V | 55 A | 12.2 mOhms | - 20 V, 20 V | 2 V | 25 nC | - 55 C | + 150 C | 72 W | Enhancement | U-MOSVIII-H | Tube | ||||
0In Stock | Si | SMD/SMT | DSOP-8 | N-Channel | 1 Channel | 100 V | 70 A | 4.1 mOhms | - 20 V, 20 V | 3.5 V | 75 nC | - 55 C | + 175 C | 170 W | Enhancement | Reel | ||||||
Mfr: TK22A65X5,S5X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TO-220SIS PD=45W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 22 A | 160 mOhms | - 30 V, 30 V | 4.5 V | 50 nC | - 55 C | + 150 C | 45 W | Enhancement | DTMOSIV-H | Tube | ||||
Mfr: TK17A65W5,S5X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TO-220SIS PD=45W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 17.3 A | 230 mOhms | - 30 V, 30 V | 4.5 V | 50 nC | - 55 C | + 150 C | 45 W | Enhancement | DTMOSIV | Tube | ||||
0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 60 V | 70 A | 2.6 mOhms | - 10 V, 10 V | 1.5 V | 65 nC | - 55 C | + 175 C | 132 mW | Enhancement | Reel | ||||||
Not Available Online | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 6.5 A | 950 mOhms | - 20 V, 20 V | 3 V | 13 nC | - 55 C | + 150 C | 35 W | Enhancement | DTMOSIV | Tube | |||||
Mfr: TK16J60W5,S1VQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TO-3PN(OS) PD=130W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-3PN-3 | N-Channel | 1 Channel | 600 V | 15.8 A | 230 mOhms | - 30 V, 30 V | 4.5 V | 43 nC | - 55 C | + 150 C | 130 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: TK4R1A10PL,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TO-220SIS PD=54W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 80 A | 5.9 mOhms | - 20 V, 20 V | 2.5 V | 104 nC | - 55 C | + 175 C | 54 W | Enhancement | U-MOSIX-H | Tube | ||||
Mfr: TPH3R70APL1,LQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 100V U-MOS IX-H SOP-Advance(N) 3.7mohm | 0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 100 V | 90 A | 6.2 mOhms | - 20 V, 20 V | 2.5 V | 67 nC | - 55 C | + 175 C | 210 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | CST3-3 | P-Channel | 1 Channel | 20 V | 100 mA | 8 Ohms | - 10 V, 20 V | 600 mV | + 150 C | 100 mW | Enhancement | |||||||||
Mfr: TK31N60X,S1F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs DTMOSIV-H/S 600V 88mOhmmax(VGS=10V) | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 30.8 A | 73 mOhms | - 30 V, 30 V | 3.5 V | 65 nC | - 55 C | + 150 C | 230 W | Enhancement | DTMOSIV-H | Tube | ||||
Mfr: TK55S10N1,LQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs UMOSVIII 100V 6.5m max(VGS=10V) DPAK | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 100 V | 55 A | 5.5 mOhms | - 20 V, 20 V | 4 V | 49 nC | - 55 C | + 175 C | 100 W | Enhancement | AEC-Q101 | U-MOSVIII-H | Reel | |||
Mfr: TK65A10N1,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs MOSFET NCh 4ohm VGS10V10uAVDS100V | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 65 A | 4 mOhms | - 20 V, 20 V | 4 V | 81 nC | - 55 C | + 150 C | 45 W | Enhancement | U-MOSVIII-H | Tube | ||||
0In Stock | Si | SMD/SMT | DFN8x8-5 | N-Channel | 1 Channel | 600 V | 20 A | 156 mOhms | - 30 V, 30 V | 3 V | 55 nC | - 55 C | + 150 C | 156 W | Enhancement | DTMOSIV | Reel | |||||
0In Stock | Si | SMD/SMT | S-Mini-3 | P-Channel | 1 Channel | 20 V | 2 A | 150 mOhms | - 8 V, 6 V | 1 V | 4.6 nC | - 55 C | + 150 C | 1.2 W | Enhancement | AEC-Q101 | U-MOSVI | Reel |
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