Vishay - MOSFETs
1.531 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Mfr: SIZF4800LDT-T1-GE3-X TTI: SIZF4800LDT-T1-GE3-X Vishay Availability: 50In StockCut Tape MOSFETs N-CH DUAL 80V PPAIR 3X3FS | 50In Stock | Cut Tape | ||||||||||||||||||||
Mfr: SIRS5700DP-T1-RE3-X TTI: SIRS5700DP-T1-RE3-X Vishay Availability: 50In StockCut Tape MOSFETs N-CH SINGLE 150V PPAK SO-8S | 50In Stock | Cut Tape | ||||||||||||||||||||
Mfr: SIR5802DP-T1-RE3-X TTI: SIR5802DP-T1-RE3-X Vishay Availability: 50In StockCut Tape MOSFETs N-CH SINGLE 80V PPAK SO-8 | 50In Stock | Si | SMD/SMT | SO-8 | N-Channel | 1 Channel | 80 V | 137.5 A | 2.9 mOhms | - 10 V, 10 V | 4 V | 28 nC | - 55 C | + 150 C | PowerPAK | Cut Tape | ||||||
Mfr: SQJ940EP-T1/GE3-X TTI: SQJ940EP-T1/GE3-X Vishay Availability: 50In StockCut Tape MOSFETs N-CH DUAL 40V PPK-SO8L AECQ | 50In Stock | Si | Cut Tape | |||||||||||||||||||
Mfr: SQJ208EP-T1/GE3-X TTI: SQJ208EP-T1/GE3-X Vishay Availability: 50In StockCut Tape MOSFETs N-CH DUAL 40V PPAK SO-8L | 50In Stock | Si | Cut Tape | |||||||||||||||||||
Mfr: SQJ262EP-T1/GE3-X TTI: SQJ262EP-T1/GE3-X Vishay Availability: 50In StockCut Tape MOSFETs N-CH DUAL 60V PPAKSO8L | 50In Stock | Si | Cut Tape | |||||||||||||||||||
Mfr: SIR578DP-T1-RE3 TTI: SIR578DP-T1-RE3 Vishay Availability: 0In StockMOSFETs N-CH SINGLE 150V PPAK SO-8 | 0In Stock | Si | SMD/SMT | SO-8 | N-Channel | 1 Channel | 150 V | 70.2 A | 8.8 mOhms | - 10 V, 10 V | 4 V | 24.5 nC | - 55 C | + 150 C | Enhancement | Reel | ||||||
0In Stock | Si | Reel | ||||||||||||||||||||
Mfr: SIR572DP-T1-RE3 TTI: SIR572DP-T1-RE3 Vishay Availability: 0In StockMOSFETs N-CH SINGLE 150V PPAK SO-8 | 0In Stock | Si | Reel | |||||||||||||||||||
0In Stock | Si | SMD/SMT | TO-220AB | N-Channel | 1 Channel | 100 V | 150 A | 4 mOhms | - 10 V, 10 V | 4 V | 84 nC | - 55 C | + 175 C | 278 W | Reel | |||||||
Mfr: SIHP190N65E-GE3 TTI: SIHP190N65E-GE3 Vishay Availability: 0In StockMOSFETs N-CH SINGLE 650V TO220AB | 0In Stock | Si | SMD/SMT | TO-220AB | N-Channel | 1 Channel | 650 V | 20 A | 190 mOhms | - 30 V, 30 V | 5 V | 33 nC | - 55 C | + 150 C | 179 W | Enhancement | Vishay | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 12 A | 380 mOhms | - 30 V, 30 V | 4 V | 29 nC | - 55 C | + 150 C | 147 W | Enhancement | Tube | SIHP12N60E-GE3 SIHP12N60E-E3 | |||||
0In Stock | Si | SMD/SMT | TO-263 | N-Channel | 1 Channel | 650 V | 20 A | 190 mOhms | - 30 V, 30 V | 5 V | 33 nC | - 55 C | + 150 C | 179 W | Enhancement | Vishay | Tube | |||||
Mfr: SIHB100N65E-GE3 TTI: SIHB100N65E-GE3 Vishay Availability: 0In StockMOSFETs E Series Power MOSFET 650 V (D-S) 150 C MOSFET 0.1 10V | 0In Stock | Si | SMD/SMT | D2PAK-3 | N-Channel | 1 Channel | 650 V | 30 A | 100 mOhms | - 30 V, 30 V | 5 V | 41 nC | - 55 C | + 150 C | 208 W | Enhancement | Tube | |||||
Mfr: SIHP100N65E-GE3 TTI: SIHP100N65E-GE3 Vishay Availability: 0In StockMOSFETs E Series Power MOSFET 650 V (D-S) 150 C MOSFET 0.1 10V | 0In Stock | Si | Through Hole | TO-220AB-3 | N-Channel | 1 Channel | 650 V | 30 A | 100 mOhms | - 30 V, 30 V | 5 V | 41 nC | - 55 C | + 150 C | 208 W | Enhancement | Tube | |||||
Mfr: SIR5812DP-T1-RE3 TTI: SIR5812DP-T1-RE3 Vishay Availability: 0In StockMOSFETs N-CH SINGLE 80V PPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 80 V | 45.3 A | 13.5 mOhms | - 20 V, 20 V | 4 V | 10 nC | - 55 C | + 150 C | 50 W | Enhancement | Reel | |||||
Mfr: SIHG075N65E-GE3 TTI: SIHG075N65E-GE3 Vishay Availability: 0In StockMOSFETs N-CH SINGLE 650V TO247AC | 0In Stock | Si | Through Hole | TO-247AC-3 | N-Channel | 1 Channel | 650 V | 40 A | 65 mOhms | 30 V | 5 V | 132 nC | - 55 C | + 150 C | 250 W | Enhancement | Tube | |||||
Mfr: SIHG125N65E-GE3 TTI: SIHG125N65E-GE3 Vishay Availability: 0In StockMOSFETs E Series Power MOSFET 650 V (D-S) 150 C MOSFET 0.12 10V | 0In Stock | Si | Through Hole | TO-247AC-3 | N-Channel | 1 Channel | 650 V | 27 A | 120 mOhms | - 30 V, 30 V | 5 V | 38 nC | - 55 C | + 150 C | 208 W | Enhancement | Tube | |||||
0In Stock | Si | Reel | ||||||||||||||||||||
Mfr: SIHH125N65E-T1-GE3 TTI: SIHH125N65E-T1-GE3 Vishay Availability: 0In StockMOSFETs E Series Power MOSFET 650 V (D-S) 150 C MOSFET 0.12 10V | 0In Stock | Si | SMD/SMT | PowerPAK-8x8 | N-Channel | 1 Channel | 650 V | 25 A | 120 mOhms | - 30 V, 30 V | 5 V | 38 nC | - 55 C | + 150 C | 174 W | Enhancement | Reel | |||||
Mfr: SIHK105N60EF-T1GE3 TTI: SIHK105N60EF-T1GE3 Vishay Availability: 0In StockMOSFETs N-CH SINGLE 600V PPAK10X12 | 0In Stock | Si | SMD/SMT | PowerPAK 10 x 12 | N-Channel | 1 Channel | 600 V | - 20 V, 20 V | 5 V | - 55 C | + 150 C | Enhancement | Reel | |||||||||
Mfr: SIHM080N60E-T1-GE3 TTI: SIHM080N60E-T1-GE3 Vishay Availability: 0In StockMOSFETs E Series Power MOSFET PowerPAK 8x8L | 0In Stock | Si | SMD/SMT | PowerPAK-8x8L | N-Channel | 1 Channel | 600 V | 51 A | 84 mOhms | - 30 V, 30 V | 5 V | 42 nC | - 55 C | + 150 C | 500 W | Enhancement | Reel | |||||
Mfr: SI3122DV-T1-GE3 TTI: SI3122DV-T1-GE3 Vishay Availability: 0In StockMOSFETs N-CH SINGLE 100V TSOP-6 | 0In Stock | Si | SMD/SMT | TSOP-6 | N-Channel | 1 Channel | 100 V | 1.78 A | 160 mOhms | - 20 V, 20 V | 4 V | 3.8 nC | - 55 C | + 150 C | 1.34 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIS4604DN-T1-GE3 TTI: SIS4604DN-T1-GE3 Vishay Availability: 0In StockMOSFETs N-CH SINGLE 60V PPAK1212-8 | 0In Stock | Si | 60 V | 14.6 A | 12.4 mOhms | - 20 V, 20 V | 4 V | 11.2 nC | - 55 C | + 150 C | 3.6 W | Reel | ||||||||||
Mfr: SIHA15N80AEF-GE3 TTI: SIHA15N80AEF-GE3 Vishay Availability: 0In StockMOSFETs N-CH SINGLE 800V TO220FP | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 6 A | 350 mOhms | - 30 V, 30 V | 4 V | 36 nC | - 55 C | + 150 C | 33 W | Enhancement | Reel |
