Vishay / Siliconix - MOSFETs
4.343 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SI4103DY-T1-GE3 TTI: SI4103DY-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs -30V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 30 V | 16 A | 7.9 mOhms | - 20 V, 20 V | 1 V | 140 nC | - 55 C | + 150 C | 5.2 W | Enhancement | Reel | |||||
Mfr: SI8802DB-T2-E1 TTI: SI8802DB-T2-E1 Vishay / Siliconix Availability: 0In StockMOSFETs 8V Vds 5V Vgs MICRO FOOT 0.8 x 0.8 | 0In Stock | Si | SMD/SMT | MicroFoot-4 | N-Channel | 1 Channel | 8 V | 3.5 A | 54 mOhms | - 5 V, 5 V | 350 mV | 4.3 nC | - 55 C | + 150 C | 900 mW | Enhancement | TrenchFET | Reel | ||||
Mfr: SIA938DJT-T1-GE3 TTI: SIA938DJT-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH DUAL 20V PPAK SC70-6L | 0In Stock | Si | SMD/SMT | SC-75-6 | N-Channel | 1 Channel | 20 V | 4.5 A | 21.5 mOhms | - 8 V, 12 V | 1.5 V | 3.5 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 20 V | 4 A | 90 mOhms | - 12 V, 12 V | 1.5 V | 9 nC | - 55 C | + 150 C | 2.7 W | Enhancement | Reel | SI3443DDV-T1-GE3 | |||||
0In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 1 Channel | 20 V | 7.5 A | 19.9 mOhms | - 8 V, 8 V | 1 V | 19.8 nC | - 55 C | + 150 C | 3.29 W | Enhancement | Reel | ||||||
Mfr: SIA4265EDJ-T1-GE3 TTI: SIA4265EDJ-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs P-CH SINGLE -20V PPAKSC-70-6L | 0In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 1 Channel | 20 V | 7.8 A | 32 mOhms | - 8 V, 8 V | 1 V | 13.8 nC | - 55 C | + 150 C | 2.9 W | Enhancement | Reel | |||||
Mfr: SIRS5100DP-T1-GE3 TTI: SIRS5100DP-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs MOSFET N-Channel 100V (D-S), PowerPAK SO-8S, 2.5 mohm at 10V | 0In Stock | Si | SMD/SMT | SO-8S | N-Channel | 1 Channel | 100 V | 225 A | 2.5 mOhms | - 20 V, 20 V | 4 V | 68 nC | - 55 C | + 150 C | 240 W | Enhancement | Reel | |||||
Mfr: SIRS5702DP-T1-RE3 TTI: SIRS5702DP-T1-RE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH SINGLE 150V PPAK SO-8S | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8S | N-Channel | 1 Channel | 150 V | 119 A | 7.2 mOhms | - 20 V, 20 V | 4 V | 58 nC | - 55 C | + 150 C | 245 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIZ342BDT-T1-GE3 TTI: SIZ342BDT-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH DUAL 30V PPAIR 3X3 | 0In Stock | Si | SMD/SMT | PowerPAIR-3x3-8 | N-Channel | 1 Channel | 30 V | 32.9 A | 9.65 mOhms | - 16 V, 20 V | 2.4 V | 8.4 nC | - 55 C | + 150 C | 16.7 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI2392BDS-T1-GE3 TTI: SI2392BDS-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH SINGLE 100V SOT-23 | 0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 100 V | 2.3 A | 180 mOhms | - 20 V, 20 V | 3 V | 4.7 nC | - 55 C | + 150 C | 1.7 W | Enhancement | Reel | |||||
Mfr: SIA112LDJ-T1-GE3 TTI: SIA112LDJ-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH SINGLE 100V PPAKSC-70-6L | 0In Stock | Si | SMD/SMT | SC-70-6 | N-Channel | 1 Channel | 100 V | 8.8 A | 119 mOhms | - 20 V, 20 V | 2.5 V | 2.7 nC | - 55 C | + 150 C | 15 W | Enhancement | Reel | |||||
Mfr: SIRA84BDP-T1-GE3 TTI: SIRA84BDP-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH SINGLE 30V PPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 70 A | 7.1 mOhms | - 16 V, 20 V | 1.2 V | 20.7 nC | - 55 C | + 150 C | 36 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI3483DDV-T1-GE3 TTI: SI3483DDV-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs P-CH SINGLE -30V TSOP-6 | 0In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 30 V | 8 A | 31.2 mOhms | - 20 V, 16 V | 2.2 V | 9.5 nC | - 55 C | + 150 C | 3 W | Enhancement | TrenchFET | Reel | SI3483DDV-T1-BE3 | |||
0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 30 V | 3.5 A | 88 mOhms | - 20 V, 20 V | 3 V | 4.1 nC | - 55 C | + 150 C | 1.8 W | Enhancement | TrenchFET | Reel | SI2307CDS-T1-GE3 SI2307CDS-T1-E3 | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 7 A | 250 mOhms | - 30 V, 30 V | 4 V | 41 nC | - 55 C | + 155 C | 34 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | PowerPAK-1212-8S-8 | N-Channel | 1 Channel | 60 V | 60 A | 3.7 mOhms | - 20 V, 20 V | 3.6 V | 24.5 nC | - 55 C | + 150 C | 57 W | Enhancement | TrenchFET, PowerPAK | Reel | |||||
0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 80 V | 100 A | 2.4 mOhms | - 20 V, 20 V | 2 V | 105 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | |||||
Mfr: SIHB22N60EF-GE3 TTI: SIHB22N60EF-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs Nch 600V Vds 30V Vgs TO-263; w/diode | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 600 V | 19 A | 182 mOhms | - 30 V, 30 V | 2 V | 96 nC | - 55 C | + 150 C | 179 W | Enhancement | Tube | |||||
Mfr: SUM70030M-GE3 TTI: SUM70030M-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH SINGLE 100V TO-263 | 0In Stock | Si | SMD/SMT | TO-263-7 | N-Channel | 1 Channel | 100 V | 150 A | 3.5 mOhms | - 20 V, 20 V | 142.4 nC | - 55 C | + 175 C | 375 W | Enhancement | TrenchFET | Reel | |||||
Mfr: SI2347DS-T1-BE3 TTI: SI2347DS-T1-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs P-CH SINGLE -30V TO236 | 0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 30 V | 5 A | 33 mOhms | - 20 V, 20 V | 2.5 V | 6.9 nC | - 55 C | + 150 C | 1.7 W | Enhancement | Reel | SI2347DS-T1-GE3 | ||||
Mfr: IRFZ14STRLPBF TTI: IRFZ14STRLPBF Vishay / Siliconix Availability: 0In StockMOSFETs MOSFET N-Channel 60V | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | Reel | |||||||||||||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 24 A | 145 mOhms | - 30 V, 30 V | 4 V | 81 nC | - 55 C | + 150 C | 250 W | Enhancement | Tube | ||||||
Mfr: SI7846DP-T1-GE3 TTI: SI7846DP-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 150V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 150 V | 24.5 A | 50 mOhms | - 20 V, 20 V | 4.5 V | 30 nC | - 55 C | + 150 C | 1.9 W | Enhancement | TrenchFET | Reel | SI7846DP-GE3 | |||
Mfr: SIR106DP-T1-RE3 TTI: SIR106DP-T1-RE3 Vishay / Siliconix Availability: 0In StockMOSFETs 100V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 100 V | 65.8 A | 6.6 mOhms | - 20 V, 20 V | 2 V | 42.5 nC | - 55 C | + 150 C | 83.3 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 51 A | 50 mOhms | - 30 V, 30 V | 5 V | 130 nC | - 55 C | + 150 C | 278 W | Enhancement | Tube |
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