Vishay / Siliconix - MOSFETs
4.357 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SIHF12N60E-E3 TTI: SIHF12N60E-E3 Vishay / Siliconix Availability: 0In StockMOSFETs 600V Vds 30V Vgs TO-220 FULLPAK | 0In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 600 V | 12 A | 380 mOhms | 30 V | 4 V | 29 nC | - 55 C | + 150 C | 33 W | Enhancement | Tube | |||||
Mfr: IRFI9610GPBF TTI: IRFI9610GPBF Vishay / Siliconix Availability: 0In StockMOSFETs P-CH SINGLE -200V TO220 | 0In Stock | Si | Through Hole | TO-220-3 | Tube | |||||||||||||||||
Mfr: IRFIBC40GLCPBF TTI: IRFIBC40GLCPBF Vishay / Siliconix Availability: 0In StockMOSFETs N-CH SINGLE 600V TO220 | 0In Stock | Si | Tube | |||||||||||||||||||
Mfr: SI7434ADP-T1-RE3 TTI: SI7434ADP-T1-RE3 Vishay / Siliconix Availability: 0In StockMOSFETs 250V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 250 V | 3.7 A | 150 mOhms | 20 V | 4 V | 16.5 nC | - 55 C | + 150 C | 54.3 W | Enhancement | PowerPAK | Reel | ||||
Mfr: SIRA12DDP-T1-GE3 TTI: SIRA12DDP-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 30V Vds +20, -16V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | SO-8 | N-Channel | 1 Channel | 30 V | 81 A | 3.6 mOhms | - 16 V, 20 V | 2.4 V | 22 nC | - 55 C | + 150 C | 38 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 20 A | 156 mOhms | 30 V | 4 V | 96 nC | - 55 C | + 150 C | 179 W | Enhancement | Tube | SIHP22N60AE-GE3 | |||||
Mfr: SIDR626LDP-T1-RE3 TTI: SIDR626LDP-T1-RE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH SINGLE 60V PPAK SO-8DC | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 60 V | 204 A | 1.2 mOhms | 20 V | 2.5 V | 89 nC | - 55 C | + 155 C | 125 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIHB12N50E-GE3 TTI: SIHB12N50E-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 500V Vds 30V Vgs D2PAK (TO-263) | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 550 V | 10.5 A | 380 mOhms | 30 V | 4 V | 25 nC | - 55 C | + 150 C | 114 W | Enhancement | Tube | |||||
Mfr: SIHF540S-GE3 TTI: SIHF540S-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 100V Vds 20V Vgs D2PAK (TO-263) | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 100 V | 28 A | 77 mOhms | 20 V | 2 V | 72 nC | - 55 C | + 175 C | 150 W | Enhancement | Tube | |||||
Mfr: SIHP15N80AE-GE3 TTI: SIHP15N80AE-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH SINGLE 800V TO-220AB | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 13 A | 304 mOhms | 30 V | 4 V | 35 nC | - 55 C | + 155 C | 156 W | Enhancement | Reel | |||||
Mfr: SIHB22N65E-GE3 TTI: SIHB22N65E-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 650V Vds 30V Vgs D2PAK (TO-263) | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 700 V | 22 A | 180 mOhms | 30 V | 4 V | 73 nC | - 55 C | + 150 C | 227 W | Enhancement | Tube | |||||
Mfr: SISS98DN-T1-BE3 TTI: SISS98DN-T1-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH SINGLE 200V PPAK 1212-8S | 0In Stock | Si | SMD/SMT | PowerPAK-8 | N-Channel | 1 Channel | 200 V | 14.1 A | 0.105 Ohms | 20 V | 4 V | 12.1 nC | - 55 C | + 150 C | 57 W | Enhancement | Reel | |||||
Mfr: SIRA18DDP-T1-GE3 TTI: SIRA18DDP-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH SINGLE 30V PPAK SO-8 | 0In Stock | Si | Reel | |||||||||||||||||||
0In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 30 V | 8 A | 34 mOhms | 20 V | 1 V | 11.5 nC | - 55 C | + 150 C | 4.2 W | Enhancement | Reel | SI3483CDV-T1-GE3 | |||||
0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 60 A | 1.45 mOhms | 20 V | 1.2 V | 130 nC | - 55 C | + 150 C | 83 W | Enhancement | TrenchFET, PowerPAK | Reel | |||||
Mfr: SUP90330E-GE3 TTI: SUP90330E-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 200V Vds 20V Vgs TO-220AB | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 35.8 A | 31.2 mOhms | 20 V | 2 V | 32 nC | - 55 C | + 175 C | 125 W | Enhancement | ThunderFET | Tube | ||||
0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 30 V | 3.6 A | 68 mOhms | 12 V | 1.5 V | 3 nC | - 55 C | + 150 C | 1.7 W | Enhancement | Reel | SI2300DS-T1-GE3 | |||||
Mfr: SIHB24N80AE-GE3 TTI: SIHB24N80AE-GE3 Vishay / Siliconix MOSFETs N-CHANNEL 800V E Series Pwr MOSFET | 0In Stock | Si | SMD/SMT | TO-263-4 | N-Channel | 1 Channel | 800 V | 21 A | 184 mOhms | 30 V | 4 V | 59 nC | - 55 C | + 150 C | 208 W | Enhancement | Tube | |||||
0In Stock | Si | TO-263-3 | Tube | |||||||||||||||||||
Mfr: SIRA14DDP-T1-GE3 TTI: SIRA14DDP-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH SINGLE 30V PPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK 1212-8 | N-Channel | 1 Channel | 30 V | 58 A | 5.1 mOhms | - 16 V, 20 V | 2.2 V | 19.4 nC | - 55 C | + 150 C | 31.2 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 21 A | 160 mOhms | 30 V | 4 V | 59 nC | - 55 C | + 150 C | 208 W | Enhancement | Bulk | ||||||
Mfr: SIRA99DP-T1-RE3 TTI: SIRA99DP-T1-RE3 Vishay / Siliconix Availability: 0In StockMOSFETs P-CH SINGLE -30V PPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK 1212-8 | P-Channel | 1 Channel | 30 V | 195 A | 1.7 mOhms | - 20 V, 16 V | 2.5 V | 172.5 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 20 V | 3.1 A | 112 mOhms | 8 V | 1 V | 3.3 nC | - 55 C | + 150 C | 1.6 W | Enhancement | Reel | SI2301CDS-T1-GE3 | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 850 V | 16.3 A | 250 mOhms | 30 V | 4 V | 71 nC | - 55 C | + 150 C | 179 W | Enhancement | TrenchFET | Reel | |||||
0In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 20 V | 8 A | 32.7 mOhms | 12 V | 1.5 V | 21 nC | - 55 C | + 150 C | 4.2 W | Enhancement | Reel | SI3407DV-T1-GE3 |