Vishay / Siliconix - MOSFETs
4.357 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SIHFS9N60A-GE3 TTI: SIHFS9N60A-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 600V Vds TO-263 D2PAK | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 600 V | 9.2 A | 30 V | 2 V | 49 nC | - 55 C | + 150 C | 170 W | Enhancement | Tube | ||||||
Mfr: SIHP12N60E-GE3 TTI: SIHP12N60E-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 600V Vds 30V Vgs TO-220AB | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 12 A | 380 mOhms | 30 V | 4 V | 29 nC | - 55 C | + 150 C | 147 W | Enhancement | Tube | SIHP12N60E-BE3 | ||||
Mfr: SI8816EDB-T2-E1 TTI: SI8816EDB-T2-E1 Vishay / Siliconix Availability: 0In StockMOSFETs 30V Vds 12V Vgs MICRO FOOT 0.8 x 0.8 | 0In Stock | Si | SMD/SMT | MicroFoot-4 | N-Channel | 1 Channel | 30 V | 2.3 A | 109 mOhms | 12 V | 600 mV | 8 nC | - 55 C | + 150 C | 900 mW | Enhancement | TrenchFET | Reel | ||||
Mfr: SUD80460E-GE3 TTI: SUD80460E-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 150V Vds 42A Id 10.5nC Qg Typ. | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 150 V | 42 A | 37.2 mOhms | 20 V | 4 V | 25 nC | - 55 C | + 175 C | 65.2 W | Enhancement | Reel | SUD80460E-BE3 | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 25 A | 120 mOhms | 30 V | 3 V | 45 nC | - 55 C | + 150 C | 179 W | Enhancement | Tube | ||||||
Mfr: SIS606BDN-T1-GE3 TTI: SIS606BDN-T1-GE3 Vishay / Siliconix MOSFETs 100V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 100 V | 35.3 A | 14.5 mOhms | 20 V | 2 V | 20 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 60 A | 2.8 mOhms | - 16 V, 20 V | 1.1 V | 51 nC | - 55 C | + 150 C | 40 W | Enhancement | TrenchFET, PowerPAK | Reel | SIRA10DP-GE3 | ||||
Mfr: SIDR170DP-T1-RE3 TTI: SIDR170DP-T1-RE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH SINGLE 100V PPAK SO-8DC | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 100 V | 95 A | 4.8 mOhms | 20 V | 1 V | 93 nC | - 55 C | + 150 C | 125 W | Enhancement | Reel | SIDR170DP | ||||
Mfr: SISS72DN-T1-UE3 TTI: SISS72DN-T1-UE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH SINGLE 150V PPK 1212 8S | 0In Stock | Si | SMD/SMT | PowerPAK-8 | N-Channel | 150 V | 25.5 A | 0.042 Ohms | 20 V | 4 V | 10.85 nC | - 55 C | + 150 C | 65.8 W | Enhancement | Reel | ||||||
Mfr: SIHG15N80AE-GE3 TTI: SIHG15N80AE-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH SINGLE 800V TO-247AC | 0In Stock | Si | Through Hole | TO-247AC-3 | N-Channel | 1 Channel | 800 V | 13 A | 350 mOhms | 30 V | 4 V | 53 nC | - 55 C | + 150 C | 156 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | N-Channel | 2 Channel | 100 V | 19.1 A, 19.5 A | 37.7 mOhms, 39.4 mOhms | 20 V | 2.4 V | 13.3 nC | - 55 C | + 150 C | 33 W | Enhancement | TrenchFET | Reel | ||||||
Mfr: SIHF9Z24STRR-GE3 TTI: SIHF9Z24STRR-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs P-CH SINGLE -60V TO263 | 0In Stock | Si | Reel | |||||||||||||||||||
Mfr: SI7148DP-T1-GE3 TTI: SI7148DP-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 75V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 75 V | 28 A | 11 mOhms | 20 V | 2.5 V | 68 nC | - 55 C | + 150 C | 96 W | Enhancement | TrenchFET | Reel | SI7148DP-GE3 | |||
Mfr: SIHP24N65E-GE3 TTI: SIHP24N65E-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 650V Vds 30V Vgs TO-220AB | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 24 A | 145 mOhms | 30 V | 4 V | 81 nC | - 55 C | + 150 C | 250 W | Enhancement | Tube | |||||
Mfr: SIHJ690N60E-T1-GE3 TTI: SIHJ690N60E-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH SINGLE 600V PPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 600 V | 5.6 A | 600 mOhms | 30 V | 5 V | 8 nC | - 55 C | + 150 C | 48 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIDR680DP-T1-RE3 TTI: SIDR680DP-T1-RE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH SINGLE 80V PPAK SO-8DC | 0In Stock | Si | TrenchFET | Reel | ||||||||||||||||||
0In Stock | Si | SMD/SMT | PowerPAK 10x12 | N-Channel | 1 Channel | 40 V | 795 A | 470 uOhms | 20 V | 3.5 V | 312 nC | - 55 C | + 175 C | 536 W | Enhancement | Reel | ||||||
Mfr: SIRA60DDP-T1-UE3 TTI: SIRA60DDP-T1-UE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CHANNEL 30-V (D-S) MOSFET | 0In Stock | Si | SMD/SMT | SO-8 | N-Channel | 1 Channel | 30 V | 241 A | 900 uOhms | - 16 V, 20 V | 2.2 V | 84 nC | - 55 C | + 150 C | 78 W | Enhancement | Reel | |||||
Mfr: SISS5623DN-T1-GE3 TTI: SISS5623DN-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs P-Channel 60 V (D-S) MOSFET PowerPAK 1212-8S, 24 mohm a. 10V, 46 mohm a. 4.5V | 0In Stock | Si | SMD/SMT | PowerPAK 1212-8S | P-Channel | 1 Channel | 60 V | 36.2 A | 24 mOhms | 20 V | 2.6 V | 21.8 nC | - 55 C | + 150 C | 56.8 W | Enhancement | Reel | |||||
Mfr: SIHB17N80E-T1-GE3 TTI: SIHB17N80E-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs E Series Power | 0In Stock | Si | SMD/SMT | N-Channel | 1 Channel | 800 V | 15 A | 290 mOhms | 30 V | 2 V | 122 nC | - 55 C | + 150 C | 208 W | Enhancement | Reel | ||||||
Mfr: SISF06DN-T1-GE3 TTI: SISF06DN-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs Dual N-Ch 30V(S1-S2) | 0In Stock | Si | SMD/SMT | N-Channel | 2 Channel | 30 V | 101 A | 4.5 mOhms | - 16 V, 20 V | 2.3 V | 30 nC | - 55 C | + 150 C | 69.4 W | Enhancement | TrenchFET | Reel | |||||
Mfr: SIHB186N60EF-GE3 TTI: SIHB186N60EF-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH SINGLE 600V TO263 | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 600 V | 8.4 A | 168 mOhms | 30 V | 5 V | 32 nC | - 55 C | + 150 C | 156 W | Enhancement | Tube | |||||
Mfr: SIRA20BDP-T1-GE3 TTI: SIRA20BDP-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH SINGLE 25V PPAK SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 25 V | 335 A | 580 uOhms | - 12 V, 16 V | 2.1 V | 54 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI2318CDS-T1-BE3 TTI: SI2318CDS-T1-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH SINGLE 40V TO236 | 0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 40 V | 5.6 A | 42 mOhms | 20 V | 2.5 V | 2.9 nC | - 55 C | + 150 C | 2.1 W | Enhancement | Reel | SI2318CDS-T1-GE3 | ||||
Mfr: SI2367DS-T1-BE3 TTI: SI2367DS-T1-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs P-CH SINGLE -20V TO236 | 0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 20 V | 3.8 A | 66 mOhms | 8 V | 1 V | 9 nC | - 55 C | + 150 C | 1.7 W | Enhancement | Reel | SI2367DS-T1-GE3 |