Vishay / Siliconix - MOSFETs
4.343 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SIHA18N60E-E3 TTI: Not Assigned Vishay / Siliconix Availability: 0In StockMOSFETs 600V Vds 30V Vgs TO-220 FULLPAK | 0In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 650 V | 18 A | 176 mOhms | - 30 V, 30 V | 4 V | 46 nC | - 55 C | + 150 C | 34 W | Enhancement | Reel | |||||
Mfr: SIHFR024-GE3 TTI: Not Assigned Vishay / Siliconix Availability: 0In StockMOSFETs N-CH SINGLE 60V TO252 | 0In Stock | Si | Reel | |||||||||||||||||||
Mfr: SQJA42EP-T1_GE3 TTI: Not Assigned Vishay / Siliconix Availability: 0In StockMOSFETs Nch 40V Vds 20V Vgs PowerPAK SO-8L | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8-4 | N-Channel | 1 Channel | 40 V | 20 A | 9.4 mOhms | - 20 V, 20 V | 1.3 V | 33 nC | - 55 C | + 175 C | 27 W | Enhancement | AEC-Q101 | Reel | ||||
Mfr: SQJ946EP-T1_GE3 TTI: Not Assigned Vishay / Siliconix Availability: 0In StockMOSFETs N Ch 40Vds 20Vgs AEC-Q101 Qualified | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8-4 | N-Channel | 2 Channel | 40 V | 15 A | 27 mOhms, 27 mOhms | - 20 V, 20 V | 1.5 V | 20 nC | - 55 C | + 175 C | 27 W | Enhancement | AEC-Q101 | TrenchFET | Reel | |||
Mfr: SISA66DN-T1-GE3 TTI: Not Assigned Vishay / Siliconix Availability: 0In StockMOSFETs 30V Vds TrenchFET PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 40 A | 1.9 mOhms | - 16 V, 20 V | 1 V | 66 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
0In Stock | Si | SMD/SMT | PowerPAK-1212-8S | N-Channel | 1 Channel | 100 V | 11 A | 0.054 Ohms | 20 V | 4 V | 8.5 nC | - 55 C | + 150 C | 24 W | Enhancement | Reel | ||||||
Mfr: SQJ738EP-T1_GE3 TTI: Not Assigned Vishay / Siliconix Availability: 0In StockMOSFETs DUAL N-CHANNEL 40-V (D-S) 175C MOSFET | 0In Stock | Si | Reel | |||||||||||||||||||
0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 6 A | 0.0192 Ohms | - 16 V, 20 V | 2.2 V | 10 nC | - 55 C | + 150 C | 19.9 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 40 V | 130 A | 4.6 mOhms | - 20 V, 20 V | 3.5 V | 36 nC | - 55 C | + 175 C | 148 W | Enhancement | TrenchFET | Reel | |||||
0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 40 V | 75 A | 7 mOhms | - 20 V, 20 V | 3.5 V | 27 nC | - 55 C | + 175 C | 75 W | Enhancement | TrenchFET | Reel | |||||
Mfr: SQJQ466E-T1_GE3 TTI: Not Assigned Vishay / Siliconix Availability: 0In StockMOSFETs 60V Vds PowerPAK AEC-Q101 Qualified | 0In Stock | Si | SMD/SMT | PowerPAK-8x8-4 | N-Channel | 1 Channel | 60 V | 200 A | 1.9 mOhms | - 20 V, 20 V | 3 V | 135 nC | - 55 C | + 175 C | 150 W | Enhancement | AEC-Q101 | TrenchFET | Reel | |||
Mfr: SQJA64EP-T1_GE3 TTI: Not Assigned Vishay / Siliconix Availability: 0In StockMOSFETs N-Ch 60V Vds AEC-Q101 Qualified | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8-4 | N-Channel | 1 Channel | 60 V | 15 A | 25.9 mOhms | - 20 V, 20 V | 3 V | 7.6 nC | - 55 C | + 175 C | 45 W | Enhancement | AEC-Q101 | Reel | ||||
0In Stock | Si | SMD/SMT | N-Channel | 2 Channel | - 55 C | + 175 C | Enhancement | TrenchFET | Reel | |||||||||||||
0In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 60 V | 166 A | 5 mOhms | - 20 V, 20 V | 2.5 V | 51 nC | - 55 C | + 175 C | 250 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 250 V | 24.2 A | 0.063 Ohms | 20 V | 4 V | 25.3 nC | - 55 C | + 150 C | 104 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | PowerPAK 1212-8 | N-Channel | 1 Channel | 40 V | 153 A | 3.45 mOhms | - 20 V, 20 V | 2.5 V | 53 nC | - 55 C | + 175 C | 119 W | Enhancement | Reel | ||||||
Mfr: SQJ148EP-T1_GE3 TTI: Not Assigned Vishay / Siliconix Availability: 0In StockMOSFETs N Ch 40Vds 20Vgs AEC-Q101 Qualified | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8-4 | N-Channel | 1 Channel | 40 V | 15 A | 27 mOhms | - 20 V, 20 V | 1.5 V | 20 nC | - 55 C | + 175 C | 45 W | Enhancement | AEC-Q101 | TrenchFET | Reel | |||
Mfr: SIR670DP-T1-GE3 TTI: Not Assigned Vishay / Siliconix Availability: 0In StockMOSFETs 60V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | TrenchFET, PowerPAK | Reel | ||||||||||||||||
0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 40 V | 4.1 A | 94 mOhms | - 20 V, 20 V | 2.5 V | 8.2 nC | - 55 C | + 175 C | 3 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 40 A | 3 mOhms | - 20 V, 20 V | 3 V | 84 nC | - 55 C | + 150 C | 83 W | Enhancement | TrenchFET | Reel | SI7880ADP-GE3 | ||||
Mfr: SIHB12N60ET1-GE3 TTI: SIHB12N60ET1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-Channel 600V | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 650 V | 12 A | 380 mOhms | - 30 V, 30 V | 4 V | 29 nC | - 55 C | + 150 C | 147 W | Enhancement | Reel | |||||
Mfr: SIHB18N60E-GE3 TTI: SIHB18N60E-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 600V Vds 30V Vgs D2PAK (TO-263) | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 560 V | 16 A | 380 mOhms | - 30 V, 30 V | 4 V | 46 nC | - 55 C | + 150 C | 179 W | Enhancement | Tube | |||||
Mfr: SIHB12N60ET5-GE3 TTI: SIHB12N60ET5-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-Channel 600V | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 650 V | 12 A | 380 mOhms | - 30 V, 30 V | 4 V | 29 nC | - 55 C | + 150 C | 147 W | Enhancement | Reel | |||||
Mfr: SIHU7N60E-E3 TTI: SIHU7N60E-E3 Vishay / Siliconix Availability: 0In StockMOSFETs 600V Vds 30V Vgs IPAK (TO-251) | 0In Stock | Si | Through Hole | TO-251-3 | N-Channel | 1 Channel | 609 V | 7 A | 600 mOhms | - 30 V, 30 V | 4 V | 20 nC | - 55 C | + 150 C | 78 W | Enhancement | Tube | |||||
Mfr: SIHB22N60E-E3 TTI: SIHB22N60E-E3 Vishay / Siliconix Availability: 0In StockMOSFETs 600V Vds 30V Vgs D2PAK (TO-263) | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 650 V | 21 A | 180 mOhms | - 30 V, 30 V | 4 V | 57 nC | - 55 C | + 150 C | 227 W | Enhancement | Tube |
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