Vishay / Siliconix - MOSFETs
4.343 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SIRA01DP-T1-GE3 TTI: SIRA01DP-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs -30V Vds 16V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 30 V | 60 A | 4.9 mOhms | - 16 V, 20 V | 2.2 V | 56 nC | - 55 C | + 150 C | 62.5 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
0In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 1 Channel | 30 V | 12 A | 16 mOhms | - 20 V, 16 V | 5 V | 17 nC | - 55 C | + 150 C | 17.9 W | Enhancement | TrenchFET | Reel | |||||
Mfr: SI1480BDH-T1-GE3 TTI: SI1480BDH-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-Channel 80 V (D-S) MOSFET PowerPAK SO-8, 1.8 mohm a. 10V 1.7 mohm a. 7.5V | 0In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel | 1 Channel | 100 V | 2.38 A | 212 mOhms | - 20 V, 20 V | 3 V | 3.9 nC | - 55 C | + 150 C | 2.6 W | Enhancement | Reel | |||||
Mfr: SIR5810DP-T1-RE3 TTI: SIR5810DP-T1-RE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CHANNEL 80-V (D-S) 150C MOSFET | 0In Stock | Si | SMD/SMT | SO-8 | N-Channel | 1 Channel | 80 V | 53.3 A | 10 mOhms | - 20 V, 20 V | 4 V | 12.2 nC | - 55 C | + 150 C | 56.8 W | Enhancement | Reel | |||||
Mfr: SUM50010EL-GE3 TTI: SUM50010EL-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 60V Vds 150A 375W 175C | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 60 V | 150 A | 1.73 mOhms | - 20 V, 20 V | 2.5 V | 192 nC | - 55 C | + 175 C | 375 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 30 V | 2.7 A | 190 mOhms | - 20 V, 20 V | 3 V | 2 nC | - 55 C | + 150 C | 2.3 W | Enhancement | Reel | SI2303CDS-T1-GE3 | |||||
0In Stock | Si | SMD/SMT | TO-252-4 | N-Channel | 1 Channel | 800 V | 4.4 A | 1.35 Ohms | - 30 V, 30 V | 4 V | 11 nC | - 55 C | + 150 C | 62.5 W | Enhancement | Tube | ||||||
0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 30 V | 7.6 A | 29 mOhms | - 20 V, 20 V | 2.5 V | 11.4 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | SI2369DS-T1-GE3 | |||||
Mfr: SUP40012EL-GE3 TTI: SUP40012EL-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 40V Vds +/-20V Vgs TO-220AB | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 40 V | 150 A | 1.79 mOhms | - 20 V, 20 V | 1 V | 195 nC | - 55 C | + 175 C | 150 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 4.1 A | 3 Ohms | - 20 V, 20 V | 4 V | 78 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRFBE30PBF | |||||
Mfr: SIHD2N80AE-GE3 TTI: SIHD2N80AE-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs Nch 800V Vds 30V Vgs TO-252 (DPAK) | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 800 V | 2.9 A | 2.5 Ohms | - 30 V, 30 V | 4 V | 7 nC | - 55 C | + 150 C | 62.5 W | Enhancement | Tube | |||||
Mfr: SIHP11N80E-BE3 TTI: SIHP11N80E-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH SINGLE 850V TO220AB | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 12 A | 380 mOhms | - 30 V, 30 V | 4 V | 88 nC | - 55 C | + 150 C | 179 W | Enhancement | Tube | SIHP11N80E-GE3 | ||||
0In Stock | Si | SMD/SMT | TO-263-7 | N-Channel | 1 Channel | 40 V | 200 A | 990 uOhms | - 20 V, 20 V | 2.4 V | 182 nC | - 55 C | + 175 C | 375 W | Enhancement | ThunderFET | Reel | |||||
Mfr: SIHFL9014TR-GE3 TTI: SIHFL9014TR-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs -60V Vds 20V Vgs SOT-223 | 0In Stock | Si | SMD/SMT | SOT-223-3 | P-Channel | 1 Channel | 60 V | 1.8 A | 500 mOhms | - 20 V, 20 V | 4 V | 12 nC | - 55 C | + 150 C | 3.1 W | Enhancement | Reel | |||||
Mfr: SIZF906DT-T1-GE3 TTI: SIZF906DT-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 30V Vds 20V Vgs PowerPAIR F 6 x 5 | 0In Stock | Si | SMD/SMT | PowerPAIR-6x5-8 | N-Channel | 2 Channel | 30 V | 60 A | 3 mOhms, 900 uOhms | - 16 V, 20 V | 1.1 V | 49 nC, 200 nC | - 55 C | + 150 C | 38 W, 83 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIR626LDP-T1-RE3 TTI: SIR626LDP-T1-RE3 Vishay / Siliconix Availability: 0In StockMOSFETs 60V Vds; 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 60 V | 186 A | 1.5 mOhms | - 20 V, 20 V | 1 V | 135 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIHP12N50E-GE3 TTI: SIHP12N50E-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 500V Vds 30V Vgs TO-220AB | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 10.5 A | 380 mOhms | - 30 V, 30 V | 4 V | 25 nC | - 55 C | + 150 C | 114 W | Enhancement | Tube | SIHP12N50E-BE3 | ||||
Mfr: SIR690DP-T1-GE3 TTI: SIR690DP-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 200V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 200 V | 34.4 A | 35 mOhms | - 20 V, 20 V | 2 V | 31.9 nC | - 55 C | + 150 C | 104 W | Enhancement | ThunderFET, PowerPAK | Reel | ||||
Mfr: SIHH20N50E-T1-GE3 TTI: SIHH20N50E-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 500V Vds 30V Vgs PowerPAK 8 x 8 | 0In Stock | Si | SMD/SMT | PowerPAK-4 | N-Channel | 1 Channel | 500 V | 22 A | 128 mOhms | - 30 V, 30 V | 2 V | 84 nC | - 55 C | + 150 C | 174 W | Enhancement | Reel | |||||
Mfr: SQW44N65EF-GE3 TTI: SQW44N65EF-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH SINGLE 650V TO-247AD | 0In Stock | Si | Through Hole | TO-247AD-3 | N-Channel | 1 Channel | 700 V | 47 A | 73 mOhms | - 30 V, 30 V | 4 V | 266 nC | - 55 C | + 175 C | 500 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIHU5N80AE-GE3 TTI: SIHU5N80AE-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CHANNEL 100 V | 0In Stock | Si | Through Hole | N-Channel | 1 Channel | 800 V | 4.4 A | 1.35 Ohms | - 30 V, 30 V | 4 V | 11 nC | - 55 C | + 150 C | 62.5 W | Enhancement | Reel | ||||||
Mfr: IRFZ14STRLPBF TTI: IRFZ14STRLPBF Vishay / Siliconix Availability: 0In StockMOSFETs MOSFET N-Channel 60V | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | Reel | |||||||||||||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 15 A | 280 mOhms | - 30 V, 30 V | 4 V | 39 nC | - 55 C | + 150 C | 180 W | Enhancement | Tube | ||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 24 A | 145 mOhms | - 30 V, 30 V | 4 V | 81 nC | - 55 C | + 150 C | 250 W | Enhancement | Tube | ||||||
Mfr: SI7846DP-T1-GE3 TTI: SI7846DP-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 150V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 150 V | 24.5 A | 50 mOhms | - 20 V, 20 V | 4.5 V | 30 nC | - 55 C | + 150 C | 1.9 W | Enhancement | TrenchFET | Reel | SI7846DP-GE3 |
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