Vishay Semiconductors - IGBT Modules
127 ResultsPart | Availability | Purchasing | RoHS/Lead | Product | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Pd - Power Dissipation | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Qualification | Packaging |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Mfr: VS-GB400TH120N TTI: Not Assigned Vishay Semiconductors Availability: Not Available OnlineIGBT Modules Output & SW Modules - DIAP IGBT | Not Available Online | IGBT Modules | Half Bridge | 1.2 kV | 1.9 V | 800 A | 400 nA | 2.604 kW | INT-A-PAK | - 40 C | + 150 C | ||||
Mfr: VS-GB100TH120N TTI: Not Assigned Vishay Semiconductors Availability: Not Available OnlineIGBT Modules Output & SW Modules - DIAP IGBT | Not Available Online | IGBT Modules | Half Bridge | 1.2 kV | 1.9 V | 200 A | 400 nA | 833 W | INT-A-PAK | + 150 C |
