Vishay Semiconductors - MOSFETs
2.262 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Mfr: SIA906EDJ-T1-GE3 TTI: SIA906EDJ-T1-GE3 Vishay Semiconductors Availability: 0In Stock3.000 On Order Expected 19-Aug-26 MOSFETs 20V Vds 12V Vgs PowerPAK SC-70 | 0In Stock3.000 On Order Expected 19-Aug-26 | Si | SMD/SMT | SC-70-6 | N-Channel | 2 Channel | 20 V | 4.5 A | 46 mOhms | - 8 V, 8 V | 600 mV | 950 pC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA906EDJ-GE3 | |||
Mfr: SI2325DS-T1-E3 TTI: SI2325DS-T1-E3 Vishay Semiconductors Availability: 0In Stock9.000 On Order Expected 07-Jul-26 MOSFETs -150V Vds 20V Vgs SOT-23 | 0In Stock9.000 On Order Expected 07-Jul-26 | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 150 V | 690 mA | 1.2 Ohms | - 20 V, 20 V | 2.5 V | 12 nC | - 55 C | + 150 C | 1.25 W | Enhancement | TrenchFET | Reel | SI2325DS-T1-BE3 SI2325DS-E3 | |||
Mfr: SI7450DP-T1-GE3 TTI: SI7450DP-T1-GE3 Vishay Semiconductors Availability: 0In Stock12.000 On Order Expected MOSFETs 200V Vds 20V Vgs PowerPAK SO-8 | 0In Stock12.000 On Order Expected | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 200 V | 5.3 A | 80 mOhms | - 20 V, 20 V | 4.5 V | 42 nC | - 55 C | + 150 C | 5.2 W | Enhancement | TrenchFET | Reel | SI7450DP-GE3 | |||
Mfr: SI4532CDY-T1-GE3 TTI: SI4532CDY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20V Vgs SO-8 N&P PAIR | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel, P-Channel | 2 Channel | 30 V | 4.3 A, 6 A | 47 mOhms, 89 mOhms | - 20 V, 20 V | 1 V | 6 nC, 7.8 nC | - 55 C | + 150 C | 2.78 W | Enhancement | TrenchFET | Reel | SI4532CDY-GE3 | |||
Mfr: SISS71DN-T1-GE3 TTI: SISS71DN-T1-GE3 Vishay Semiconductors MOSFETs -100V Vds 20V Vgs PowerPAK 1212-8S | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 100 V | 23 A | 47 mOhms | - 20 V, 20 V | 2.5 V | 30 nC | - 50 C | + 150 C | 57 W | Enhancement | ThunderFET, PowerPAK | Reel | ||||
Mfr: SISB46DN-T1-GE3 TTI: SISB46DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 40V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 2 Channel | 40 V | 34 A | 11.71 mOhms | - 16 V, 20 V | 1.1 V | 22 nC | - 55 C | + 150 C | 23 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIA931DJ-T1-GE3 TTI: SIA931DJ-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -30V Vds 20V Vgs PowerPAK SC-70 | 0In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 2 Channel | 30 V | 4.5 A | 65 mOhms | - 20 V, 20 V | 1.2 V | 13 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SI1034CX-T1-GE3 TTI: SI1034CX-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 20V Vds 8V Vgs SC89-6 | 0In Stock | Si | SMD/SMT | SC-89-6 | N-Channel | 2 Channel | 20 V | 610 mA | 396 mOhms | - 8 V, 8 V | 400 mV | 1.3 nC | - 55 C | + 150 C | 220 mW | Enhancement | TrenchFET | Reel | ||||
Mfr: IRFL210TRPBF TTI: IRFL210TRPBF Vishay Semiconductors Availability: 0In Stock2.500 On Order Expected 17-Sep-26 MOSFETs N-Chan 200V 0.96 Amp | 0In Stock2.500 On Order Expected 17-Sep-26 | Si | SMD/SMT | SOT-223-4 | N-Channel | 1 Channel | 200 V | 960 mA | 1.5 Ohms | - 20 V, 20 V | 4 V | 8.2 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | IRFL210TRPBF-BE3 | ||||
Mfr: SI7121ADN-T1-GE3 TTI: SI7121ADN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -30V Vds 25V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 30 V | 18 A | 15 mOhms | - 25 V, 25 V | 2.5 V | 33 nC | - 50 C | + 150 C | 27.8 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIA456DJ-T1-GE3 TTI: SIA456DJ-T1-GE3 Vishay Semiconductors MOSFETs 200V Vds 16V Vgs PowerPAK SC-70 | 0In Stock | Si | SMD/SMT | SC-70-6 | N-Channel | 1 Channel | 200 V | 2.6 A | 1.38 Ohms | - 16 V, 16 V | 600 mV | 5 nC | - 55 C | + 150 C | 19 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA456DJ-GE3 | |||
0In Stock | Si | Through Hole | TO-247AC-3 | N-Channel | 1 Channel | 600 V | 99 A | 23 mOhms | - 30 V, 30 V | 3 V | 228 nC | - 55 C | + 150 C | 524 W | Enhancement | Tube | ||||||
Mfr: SIA466EDJ-T1-GE3 TTI: SIA466EDJ-T1-GE3 Vishay Semiconductors MOSFETs 20V Vds 20V Vgs PowerPAK SC-70 | 0In Stock | Si | SMD/SMT | SC-70-6 | N-Channel | 1 Channel | 20 V | 25 A | 9.5 mOhms | - 20 V, 20 V | 1 V | 20 nC | - 55 C | + 150 C | 19.2 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 150 V | 25 A | 52 mOhms | - 20 V, 20 V | 2 V | 40 nC | - 55 C | + 175 C | 136 W | Enhancement | TrenchFET | Reel | SUD25N15-52-BE3 | ||||
Mfr: SI7848BDP-T1-GE3 TTI: SI7848BDP-T1-GE3 Vishay Semiconductors MOSFETs 40V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 40 V | 47 A | 9 mOhms | - 20 V, 20 V | 3 V | 33 nC | - 55 C | + 150 C | 36 W | Enhancement | TrenchFET | Reel | SI7848BDP-GE3 | |||
Mfr: SI4128DY-T1-GE3 TTI: SI4128DY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 10.9 A | 24 mOhms | - 20 V, 20 V | 1 V | 12 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | SI4128DY-GE3 | |||
Mfr: SISS588DN-T1-GE3 TTI: SISS588DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 80V PPAK1212-8S | 0In Stock | Si | SMD/SMT | PowerPAK1212-8 | N-Channel | 1 Channel | 80 V | 58.1 A | 7.2 mOhms | - 20 V, 20 V | 4 V | 18.7 nC | - 55 C | + 150 C | 56.8 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 39 A | 2.75 mOhms | - 20 V, 20 V | 1 V | 70 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET | Reel | SI4126DY-GE3 | ||||
Mfr: SI4896DY-T1-GE3 TTI: SI4896DY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 80V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 80 V | 9.5 A | 16.5 mOhms | - 20 V, 20 V | 2 V | 41 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI4896DY-GE3 | |||
Mfr: IRFR9214TRLPBF TTI: IRFR9214TRLPBF Vishay Semiconductors Availability: 0In StockMOSFETs P-CH SINGLE -250V TO252 | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 250 V | 2.7 A | 3 Ohms | - 20 V, 20 V | 4 V | 14 nC | - 55 C | + 150 C | 50 W | Enhancement | Reel | |||||
Mfr: SI1016CX-T1-GE3 TTI: SI1016CX-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 20V Vds 8V Vgs SC89-6 N&P PAIR | 0In Stock | Si | SMD/SMT | SC-89-6 | N-Channel, P-Channel | 2 Channel | 20 V | 350 mA, 500 mA | 396 mOhms, 756 mOhms | - 8 V, 8 V | 400 mV | 1.3 nC, 1.65 nC | - 55 C | + 150 C | 220 mW | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 100 V | 10.3 A | 26 mOhms | - 20 V, 20 V | 1.2 V | 12 nC | - 55 C | + 150 C | 5.6 W | Enhancement | Reel | ||||||
Mfr: SI7439DP-T1-GE3 TTI: SI7439DP-T1-GE3 Vishay Semiconductors MOSFETs -150V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 150 V | 5.2 A | 90 mOhms | - 20 V, 20 V | 2 V | 88 nC | - 55 C | + 150 C | 5.4 W | Enhancement | TrenchFET | Reel | SI7439DP-GE3 | |||
Mfr: SI7415DN-T1-GE3 TTI: SI7415DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -60V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 60 V | 5.7 A | 65 mOhms | - 20 V, 20 V | 3 V | 25 nC | - 55 C | + 150 C | 3.8 W | Enhancement | TrenchFET | Reel | SI7415DN-GE3 | |||
Mfr: SISS05DN-T1-GE3 TTI: SISS05DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs P-CH SINGLE -30V PPAK1212-8S | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 30 V | 108 A | 5.8 mOhms | - 20 V, 16 V | 2.2 V | 76 nC | - 55 C | + 150 C | 65.7 W | Enhancement | TrenchFET | Reel |