Vishay Semiconductors - MOSFETs
2.277 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SIS407DN-T1-GE3 TTI: SIS407DN-T1-GE3 Vishay Semiconductors MOSFETs -20V Vds 8V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 20 V | 25 A | 9.5 mOhms | 8 V | 400 mV | 38 nC | - 55 C | + 150 C | 33 W | Enhancement | TrenchFET, PowerPAK | Reel | SIS407DN-GE3 | |||
0In Stock | Si | SMD/SMT | TSOP-6 | N-Channel | 1 Channel | 30 V | 8 A | 26 mOhms | 20 V | 2.5 V | 4.2 nC | - 55 C | + 150 C | 3.6 W | Enhancement | TrenchFET | Reel | SI3424CDV-T1-BE3 | ||||
Mfr: SIA456DJ-T1-GE3 TTI: SIA456DJ-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 200V Vds 16V Vgs PowerPAK SC-70 | 0In Stock | Si | SMD/SMT | SC-70-6 | N-Channel | 1 Channel | 200 V | 2.6 A | 1.38 Ohms | 16 V | 600 mV | 5 nC | - 55 C | + 150 C | 19 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA456DJ-GE3 | |||
Mfr: SI2377EDS-T1-GE3 TTI: SI2377EDS-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 8V Vgs SOT-23 | 0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 20 V | 4.4 A | 61 mOhms | 8 V | 1 V | 7.6 nC | - 55 C | + 150 C | 1.8 W | Enhancement | TrenchFET | Reel | SI2377EDS-T1-BE3 SI2377EDS-GE3 | |||
0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 20 V | 60 A | 1.9 mOhms | 20 V | 2.3 V | 265 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET | Reel | SI7141DP-GE3 | ||||
Mfr: SI5936DU-T1-GE3 TTI: SI5936DU-T1-GE3 Vishay Semiconductors MOSFETs 30V Vds 20V Vgs PowerPAK ChipFET | 0In Stock | Si | SMD/SMT | ChipFET-8 | N-Channel | 2 Channel | 30 V | 6 A | 30 mOhms | 20 V | 1.2 V | 11 nC | - 55 C | + 150 C | 10.4 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIR626ADP-T1-RE3 TTI: SIR626ADP-T1-RE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-Channel 60-V | 0In Stock | Si | SMD/SMT | N-Channel | 1 Channel | 60 V | 165 A | 1.75 mOhms | 20 V | 3.5 V | 55 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET | Reel | |||||
Mfr: SI7309DN-T1-GE3 TTI: SI7309DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -60V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 60 V | 8 A | 146 mOhms | 20 V | 3 V | 14.5 nC | - 55 C | + 150 C | 19.8 W | Enhancement | TrenchFET | Reel | SI7309DN-GE3 | |||
Mfr: SI7252DP-T1-GE3 TTI: SI7252DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 100V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 2 Channel | 100 V | 36.7 A | 14 mOhms | 20 V | 1.5 V | 27 nC | - 55 C | + 150 C | 46 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SUM70101EL-GE3 TTI: SUM70101EL-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -100V Vds 20V Vgs TO-263 | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 100 V | 120 A | 10.1 mOhms | 20 V | 2.5 V | 125 nC | - 55 C | + 175 C | 375 W | Enhancement | Reel | |||||
Mfr: SI7121ADN-T1-GE3 TTI: SI7121ADN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -30V Vds 25V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 30 V | 18 A | 15 mOhms | 25 V | 2.5 V | 33 nC | - 50 C | + 150 C | 27.8 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI7852DP-T1-E3 TTI: SI7852DP-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 80V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 80 V | 7.6 A | 16.5 mOhms | 20 V | 2 V | 34 nC | - 55 C | + 150 C | 1.9 W | Enhancement | TrenchFET | Reel | SI7852DP-E3 | |||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 100 V | 5.6 A | 600 mOhms | 20 V | 4 V | 18 nC | - 55 C | + 150 C | 42 W | Enhancement | Tube | ||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 400 V | 5.4 A | 550 mOhms | 20 V | 2 V | 66 nC | - 55 C | + 150 C | 40 W | Enhancement | Tube | ||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 17 A | 180 mOhms | 10 V | 2 V | 66 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRL640PBF-BE3 | |||||
Mfr: SI2328DS-T1-GE3 TTI: SI2328DS-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 100V Vds 20V Vgs SOT-23 | 0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 100 V | 1.15 A | 250 mOhms | 20 V | 4 V | 3.3 nC | - 55 C | + 150 C | 730 mW | Enhancement | TrenchFET | Reel | SI2328DS-T1-BE3 SI2328DS-GE3 | |||
Mfr: SI4455DY-T1-GE3 TTI: SI4455DY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -150V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 150 V | 2.8 A | 315 mOhms | 20 V | 4 V | 42 nC | - 55 C | + 150 C | 5.9 W | Enhancement | TrenchFET | Reel | SI4455DY-GE3 | |||
Mfr: SI7439DP-T1-E3 TTI: SI7439DP-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs -150V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 150 V | 5.2 A | 90 mOhms | 20 V | 2 V | 88 nC | - 55 C | + 150 C | 5.4 W | Enhancement | TrenchFET | Reel | SI7439DP-E3 | |||
Mfr: SIR880ADP-T1-GE3 TTI: SIR880ADP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 80V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 80 V | 60 A | 5.2 mOhms | 20 V | 1.5 V | 72 nC | - 55 C | + 150 C | 83 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR880ADP-GE3 | |||
Mfr: SIDR680DP-T1-GE3 TTI: SIDR680DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 80V Vds 20V Vgs PowerPAK SO-8DC | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 80 V | 100 A | 3.4 mOhms | 20 V | 2 V | 69.5 nC | - 55 C | + 150 C | 125 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI5513CDC-T1-GE3 TTI: SI5513CDC-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 20V Vds 12V Vgs 1206-8 ChipFET | 0In Stock | Si | SMD/SMT | ChipFET-8 | N-Channel, P-Channel | 2 Channel | 30 V | 3.7 A, 4 A | 55 mOhms, 150 mOhms | 12 V | 600 mV, 1.5 V | 4.2 nC, 5.6 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI5509DC-T1-GE3 | |||
Mfr: SI2300DS-T1-GE3 TTI: SI2300DS-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 12V Vgs SOT-23 | 0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 30 V | 3.6 A | 68 mOhms | 12 V | 1.5 V | 3 nC | - 55 C | + 150 C | 1.7 W | Enhancement | TrenchFET | Reel | SI2300DS-T1-BE3 SI2300DS-GE3 | |||
Mfr: SIRB40DP-T1-GE3 TTI: SIRB40DP-T1-GE3 Vishay Semiconductors Availability: 0In Stock6.000 On Order Expected 21-Mar-29 MOSFETs 40V Vds 20V Vgs PowerPAK SO-8 | 0In Stock6.000 On Order Expected 21-Mar-29 | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 2 Channel | 40 V | 40 A | 3.25 mOhms | - 16 V, 20 V | 1.1 V | 93 nC | - 55 C | + 150 C | 46.2 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SUG90090E-GE3 TTI: SUG90090E-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 200V Vds ThunderFET 100A Id +/-20V Vgs | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 200 V | 100 A | 7.9 mOhms | 20 V | 2 V | 129 nC | - 55 C | + 175 C | 395 W | Enhancement | Bulk | |||||
0In Stock | Si | SMD/SMT | TO-263-3 | P-Channel | 1 Channel | 100 V | 6.8 A | 600 mOhms | 20 V | 4 V | 18 nC | - 55 C | + 175 C | 60 W | Enhancement | Tube |