Vishay Semiconductors - MOSFETs
2.262 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SIR664DP-T1-GE3 TTI: SIR664DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 60V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 60 V | 60 A | 6 mOhms | - 20 V, 20 V | 1.3 V | 26 nC | - 55 C | + 150 C | 50 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 33 A | 6 mOhms | - 16 V, 20 V | 1.2 V | 21.5 nC | - 55 C | + 150 C | 14.7 W | Enhancement | TrenchFET, PowerPAK | Reel | |||||
Mfr: SISA04DN-T1-GE3 TTI: SISA04DN-T1-GE3 Vishay Semiconductors MOSFETs For New Design See: 78-SISHA04DN-T1-GE3 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 40 A | 1.8 mOhms | - 16 V, 20 V | 1.1 V | 77 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET | Reel | SISA04DN-GE3 | |||
0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 28 A | 4.2 mOhms | - 20 V, 20 V | 1.4 V | 100 nC | - 55 C | + 150 C | 6.25 W | Enhancement | TrenchFET | Reel | SI4842BDY-E3 | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 100 V | 150 A | 2.88 mOhms | - 20 V, 20 V | 2 V | 214 nC | - 55 C | + 175 C | 375 W | Enhancement | Reel | ||||||
Mfr: SIS454DN-T1-GE3 TTI: SIS454DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 20V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 20 V | 35 A | 3.7 mOhms | - 20 V, 20 V | 1 V | 53 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel | SIS454DN-GE3 | |||
Mfr: SIJA58ADP-T1-GE3 TTI: SIJA58ADP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 40V Vds; 20/-16V Vgs PowerPAK SO-8L | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8-4 | N-Channel | 1 Channel | 40 V | 32.3 A | 2.65 mOhms | - 16 V, 20 V | 1.1 V | 61 nC | - 55 C | + 150 C | 56.8 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 2 Channel | 40 V | 60 A | 5.8 mOhms | - 20 V, 20 V | 2.5 V | 65 nC | - 55 C | + 150 C | 46 W | Enhancement | TrenchFET | Reel | SI7938DP-GE3 | ||||
Mfr: SI1424EDH-T1-GE3 TTI: SI1424EDH-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 20V Vds 8V Vgs SC70-6 | 0In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel | 1 Channel | 20 V | 4 A | 33 mOhms | - 8 V, 8 V | 1 V | 18 nC | - 55 C | + 150 C | 1.56 W | Enhancement | TrenchFET | Reel | SI1424EDH-T1-BE3 | |||
0In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 2 Channel | 12 V | 4.5 A | 33 mOhms, 33 mOhms | - 8 V, 8 V | 1 V | 26 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA975DJ-GE3 | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 150 V | 85 A | 19 mOhms | - 20 V, 20 V | 2 V | 76 nC | - 55 C | + 175 C | 375 W | Enhancement | TrenchFET | Reel | |||||
Mfr: SI2309CDS-T1-E3 TTI: SI2309CDS-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs -60V Vds 20V Vgs SOT-23 | 0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 60 V | 1.6 A | 345 mOhms | - 20 V, 20 V | 3 V | 4.1 nC | - 55 C | + 150 C | 1.7 W | Enhancement | TrenchFET | Reel | SI2309CDS-T1-BE3 SI2309CDS-E3 | |||
0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 40 V | 27.2 A | 4.5 mOhms | - 25 V, 25 V | 1.2 V | 95 nC | - 55 C | + 150 C | 6 W | Enhancement | TrenchFET | Reel | SI4122DY-GE3 | ||||
Mfr: SIA416DJ-T1-GE3 TTI: SIA416DJ-T1-GE3 Vishay Semiconductors MOSFETs 100V Vds 20V Vgs PowerPAK SC-70 | 0In Stock | Si | SMD/SMT | SC-70-6 | N-Channel | 1 Channel | 100 V | 11.3 A | 68 mOhms | - 20 V, 20 V | 1.6 V | 10 nC | - 55 C | + 150 C | 19 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SISS23DN-T1-GE3 TTI: SISS23DN-T1-GE3 Vishay Semiconductors Availability: 0In Stock3.000 On Order Expected 26-Aug-26 MOSFETs -20V Vds 8V Vgs PowerPAK 1212-8S | 0In Stock3.000 On Order Expected 26-Aug-26 | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 20 V | 50 A | 3.5 mOhms | - 8 V, 8 V | 900 mV | 300 nC | - 55 C | + 150 C | 57 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 20 A | 270 mOhms | - 20 V, 20 V | 2 V | 120 nC | - 55 C | + 150 C | 280 W | Enhancement | Tube | ||||||
0In Stock | Si | SMD/SMT | TO-263-3 | P-Channel | 1 Channel | 200 V | 11 A | 500 mOhms | - 20 V, 20 V | 4 V | 44 nC | - 55 C | + 150 C | 125 W | Enhancement | Reel | ||||||
Mfr: SIJH600E-T1-GE3 TTI: SIJH600E-T1-GE3 Vishay Semiconductors Availability: 0In Stock202.000 On Order Expected MOSFETs N-CH SINGLE 60V PPAK 8X8L | 0In Stock202.000 On Order Expected | Si | SMD/SMT | PowerPak-8 | 60 V | - 20 V, 20 V | 4 V | 141 nC | - 55 C | + 175 C | 333 W | Enhancement | Reel | |||||||||
0In Stock | Si | Through Hole | TO-247AC-3 | N-Channel | 1 Channel | 600 V | 99 A | 23 mOhms | - 30 V, 30 V | 3 V | 228 nC | - 55 C | + 150 C | 524 W | Enhancement | Tube | ||||||
Mfr: SIA466EDJ-T1-GE3 TTI: SIA466EDJ-T1-GE3 Vishay Semiconductors MOSFETs 20V Vds 20V Vgs PowerPAK SC-70 | 0In Stock | Si | SMD/SMT | SC-70-6 | N-Channel | 1 Channel | 20 V | 25 A | 9.5 mOhms | - 20 V, 20 V | 1 V | 20 nC | - 55 C | + 150 C | 19.2 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 150 V | 25 A | 52 mOhms | - 20 V, 20 V | 2 V | 40 nC | - 55 C | + 175 C | 136 W | Enhancement | TrenchFET | Reel | SUD25N15-52-BE3 | ||||
Mfr: SI7848BDP-T1-GE3 TTI: SI7848BDP-T1-GE3 Vishay Semiconductors MOSFETs 40V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 40 V | 47 A | 9 mOhms | - 20 V, 20 V | 3 V | 33 nC | - 55 C | + 150 C | 36 W | Enhancement | TrenchFET | Reel | SI7848BDP-GE3 | |||
Mfr: SI4128DY-T1-GE3 TTI: SI4128DY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 10.9 A | 24 mOhms | - 20 V, 20 V | 1 V | 12 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | SI4128DY-GE3 | |||
Mfr: SISS588DN-T1-GE3 TTI: SISS588DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 80V PPAK1212-8S | 0In Stock | Si | SMD/SMT | PowerPAK1212-8 | N-Channel | 1 Channel | 80 V | 58.1 A | 7.2 mOhms | - 20 V, 20 V | 4 V | 18.7 nC | - 55 C | + 150 C | 56.8 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 39 A | 2.75 mOhms | - 20 V, 20 V | 1 V | 70 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET | Reel | SI4126DY-GE3 |
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